Semiconductor device

• US 6,631,150 B1
• Filed: 07/05/2000
• Issued: 10/07/2003
• Est. Priority Date: 07/06/1999
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Najda, Stephen Peter
• Primary Examiner(s): LEUNG, QUYEN PHAN
• Application Number:
  US09/610,019
• Time in Patent Office: 1,189 Days
• Field of Search: 372/43, 372/45, 372/46, 372/96
• US Class Current: 372/45.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01S 5/3072 Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
• CPC Class Codes: H01S 5/323 in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
• CPC Class Codes: H01S 5/32325 red laser based on InGaP
• CPC Class Codes: H01S 5/34326 with a well layer based on InGa(Al)P, e.g. red laser

Abstract

A semiconductor device has a blocking layer disposed between the substrate and the active layer. The blocking layer inhibits the propagation of anti-phase domain defects (APDs) into the active layer. This decreases the density of defects in the active layer, and improves the performance characteristics of the laser device.

The blocking layer is disposed either wholly within one of the layers of the laser device, or at the interface between two layers of the laser device. The bandgap of the blocking layer is preferably substantially equal to the bandgap of the layer in which it is disposed, or to the bandgap of a layer to which it is adjacent. This prevents the formation of a potential, barrier, or a potential well in the laser structure, so that provision of the blocking layer does not affect the transport of carriers through the device.

In one embodiment the device is a laser device and is fabricated in the (Al,Ga,In)P system.

Claims

1. An (Al,Ga,In)P semiconductor device comprising:

a substrate; and

a multilayer structure disposed on the substrate,

wherein the multilayer structure comprises a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and at least a third semiconductor layer and a fourth semiconductor layer being disposed between the substrate and a contact region within the multilayer structure, the third and fourth layers being composed of optical guiding material,

characterized in that the device further comprises a Ga<sub>1−

y</sub>In_yP layer for inhibiting the propagation of anti-phase domain defects from the first semiconductor layer into the second semiconductor layer, and

the bandgap of the layer for inhibiting the propagation of defects is substantially equal to the bandgap of a semiconductor layer adjacent to the layer for inhibiting the propagation of defects.

2. A device as claimed in claim 1 wherein the second semiconductor layer is an active layer of the device.

3. A device as claimed in claim 1 wherein the first semiconductor layer is a cladding layer of the device.

4. A device an claimed in claim 3 wherein the layer for inhibiting the propagation of defects is disposed within the cladding layer.

5. A device as claimed in claim 1 wherein the device is a separate confinement heterostructure laser device, the first semiconductor layer is a cladding layer, and the second semiconductor layer is an active layer disposed within the optical guiding region of the third and fourth layers.

6. A device as claimed in claim 5 wherein the bandgap of the layer for inhibiting the propagation of defects is substantially equal to the bandgap of a semiconductor layer adjacent to the layer for inhibiting the propagation of defects.

7. A device as claimed in claim 6, wherein the layer for inhibiting the propagation of defects is disposed between the third and fourth semiconductor layers, and the bandgap of the layer for inhibiting the propagation of defects is substantially equal to the bandgap of the third and fourth semiconductor layers.

8. A device as claimed in claim 7 wherein the third and fourth semiconductor layers comprise (Al_yGa₁₋

y)_0.52In_0.48P (0.3<

y<

0.5).

9. A device as claimed in claim 8 wherein the third and fourth semiconductor comprise (Al_0.5Ga_0.5)_0.52In_0.48P, and the layer for inhibiting the propagation of defects is a Ga_0.38In_0.62P layer.

10. A device as claimed in claim 6, wherein the layer for inhibiting the propagation of defects is disposed at the interface between the cladding layer and the third and fourth semiconductor layers, and the bandgap of the layer for inhibiting the propagation of defects is substantially equal either to the bandgap of the third and fourth semiconductor layers, or to the bandgap of the cladding layer.

11. A device as claimed in claim 1 wherein a region of the multilayer structure is such that the first semiconductor layer is a cladding layer, and the second semiconductor layer is an active layer disposed on the third semiconductor layer.

12. A device as claimed in claim 11 wherein the layer for inhibiting the propagation of defects is disposed within the first semiconductor layer, and the first semiconductor layer is a cladding layer.

13. A device as claimed in claim 11 wherein the layer for inhibiting the propagation of defects is disposed between the cladding layer and the third and fourth semiconductor layers.

14. A device as claimed in claim 11 wherein the layer for inhibiting the propagation of defects is provided between the third and fourth semiconductor layers.

15. A device as claimed in claim 1, wherein the layer for inhibiting the propogation of defects is a strained Ga₁₋

yIn_yP layer.

16. A device as claimed in claim 1, wherein the layer for inhibiting the propagation of defects is disposed within 1 μ

m of the second semiconductor layer, the second semiconductor layer being an active layer.

17. A device as claimed in claim 1, wherein the layer for inhibiting the propagation of defects is disposed within the first semiconductor layer, and the bandgap of the layer for inhibiting the propagation of defects is substantially equal to the bandgap of the first semiconductor layer.

18. A device as claimed in claim 17 wherein the first semiconductor layer is an (Al_yGa₁₋

y)_0.52In_0.48P layer (0.5<

y<

1).

19. A device as claimed in claim 18 wherein the first semiconductor layer is an (Al_0.7Ga_0.3)_0.52In_0.48P layer and the layer for inhibiting the propagation of defects is a Ga_0.3In_0.7P layer.

20. A device as claimed in claim 18 wherein the first semiconductor layer is an Al_0.52In_0.48P layer and the layer for inhibiting the propagation of defects is a GaP layer.

21. A device as claimed in claim 1 and further comprising a second layer for inhibiting the propagation of defects into the second semiconductor layer.

22. A device as claimed in claim 1 wherein the characteristic size of the anti-phase domain defect in the layer for inhibiting the propagation of defects is different from the characteristic size of an anti-phase domain defect in the second semiconductor layer.