Method of fabricating a distributed Bragg reflector having enhanced thermal and electrical properties
First Claim
Patent Images
1. A method of enhancing thermal properties of a distributed Bragg reflector, comprising:
- growing a high refractive index layer including aluminum gallium arsenic antimonide (AlGaAsSb) on a substrate; and
growing a low refractive index layer including indium phosphide (InP) on the substrate, the high refractive index layer being lattice-matched to the low refractive index layer to form a layered semiconductor material, wherein use of InP reduces thermal resistivity in the layered semiconductor material.
2 Assignments
0 Petitions
Accused Products
Abstract
A distributed Bragg reflector (DBR) for a vertical cavity surface emitting laser (VCSEL) includes alternating layers of different semiconductor materials to improve thermal and electrical characteristics for the VCSEL. Use of particular materials reduces the thermal resistivity of the DBR and allows heat to dissipate quickly during operation of the VCSEL.
-
Citations
57 Claims
-
1. A method of enhancing thermal properties of a distributed Bragg reflector, comprising:
-
growing a high refractive index layer including aluminum gallium arsenic antimonide (AlGaAsSb) on a substrate; and
growing a low refractive index layer including indium phosphide (InP) on the substrate, the high refractive index layer being lattice-matched to the low refractive index layer to form a layered semiconductor material, wherein use of InP reduces thermal resistivity in the layered semiconductor material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A method of fabricating a distributed Bragg reflector, comprising:
-
providing a substrate, a high refractive index aluminum gallium arsenic antimonide (AlGaAsSb) layer of semiconductor material and a low refractive index, indium phospide (InP) layer of semiconductor material; and
growing the AlGaAsSb layer and the InP layer on the substrate to form a reflective device. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
-
- 29. A distributed Bragg reflector for use in a vertical cavity surface emitting laser, comprising a layered semiconductor material on a substrate, the layered semiconductor material having at least one indium phosphide (InP) layer and at least one aluminum gallium arsenic antimonide (AlGaAsSb) layer lattice-matched to the InP layer.
-
44. A method of enhancing thermal properties of a distributed Bragg reflector, comprising:
-
providing a substrate and a layered semiconductor material grown on the substrate, the layered semiconductor material having a plurality of high refractive index layers each including aluminum gallium arsenic antimonide (AlGaAsSb) and a plurality of low refractive index layers each including indium phosphide (InP); and
reducing thermal resistivity in the layered semiconductor material by lattice-matching the AlGaAsSb layers to the InP layers, wherein the InP layers are introduced into the semiconductor material as the AlGaAsSb layers are grown on the substrate. - View Dependent Claims (45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56)
-
-
57. A distributed Bragg reflector for use in a vertical cavity surface emitting laser, comprising a layered semiconductor material on a substrate, the layered semiconductor material having a binary alloy including at least one indium phosphide (InP) layer and a quarternary alloy including at least one aluminum gallium arsenic antimonide (AlGaAsSb) layer lattice-matched to at least one InP layer.
Specification