Simulation circuit for MOS transistor, simulation testing method, netlist of simulation circuit and storage medium storing same

• US 6,631,505 B2
• Filed: 11/28/2001
• Issued: 10/07/2003
• Est. Priority Date: 11/29/2000
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Arai, Takao
• Primary Examiner(s): Garbowski, Leigh M.
• Assistant Examiner(s): DO, THUAN V
• Application Number:
  US09/996,251
• Publication Number:
  US 20020063252A1
• Time in Patent Office: 678 Days
• Field of Search: 327/198, 716/1, 716/4, 716/11, 716/12
• US Class Current: 716/106
• CPC Class Codes: G06F 30/367 Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A simulation circuit for MOS transistors is provided in which neither oscillation nor a change in a characteristic of feedback capacitance occurs. A ratio of a junction capacitance characteristic of a third diode and an electrostatic capacity characteristic of a capacitor to be displayed, changes in response to a change in a voltage between a drain and a gate and the junction capacitance characteristic of the third diode and the electrostatic capacity characteristic of the capacitor are displayed at an equal ratio in a region where a voltage between the drain and gate is almost 0 (zero) V and, therefore, normal simulation testing can be done and no oscillation occurs. Moreover, since no resistor component is connected in series in the third diode and the capacitor, there is no time constant. Therefore, a characteristic curve of the feedback capacitance can be normally obtained irrespective of the change rate of the voltage between the drain and gate.

Claims

1. A simulation circuit for a MOS (Metal Oxide Semiconductor) transistor for doing simulation testing of said MOS transistor using a netlist showing internal configurations of said MOS transistor, said simulation circuit comprising:

a feedback capacitor formed between a gate electrode and a drain electrode of said MOS transistor; and

wherein said feedback capacitor includes a diode having a predetermined junction capacitance characteristic and a diode having a predetermined electrostatic capacity characteristic and wherein said junction capacitance characteristic of said diode is chiefly displayed when an absolute value of a voltage of said drain electrode is larger than an absolute value of a voltage of said gate electrode and said electrostatic capacity characteristic of said capacitor is chiefly displayed when said absolute value of a voltage of said drain electrode is smaller than said absolute value of a voltage of said gate electrode and said junction capacitance characteristic of said diode and said electrostatic capacity characteristic of said capacitor are equally displayed when said absolute value of said voltage of said gate electrode is almost same as said absolute value of said voltage of said drain electrode.

2. A simulation circuit for a MOS transistor for doing simulation testing of said MOS transistor using a netlist showing internal configurations of said MOS transistor, said simulation circuit comprising:

a feedback capacitor formed between a gate electrode and a drain electrode of said MOS transistor; and

wherein said feedback capacitor includes;

a first voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of a drain-gate voltage being a voltage between said gate electrode and said drain electrode and outputs a first output voltage having the same value as said drain-gate voltage;

a bidirectional diode having a first diode and a second diode, both of which have no junction capacitance and are connected in series so that said first diode and said second diode are opposite in polarity, wherein said bidirectional diode receives an input of said first output voltage and, when said first output voltage is positive, outputs a second output voltage having almost the same value as said first output voltage from said first diode and, when said first output voltage is negative, outputs a third output voltage having almost the same value as said first output voltage from said second diode and, when said first output voltage is almost 0 (zero) volts, outputs said second output voltage and said third output voltage each being half said first output voltage from said first diode and said second diode respectively;

a second voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said second output voltage and outputs a fourth output voltage having the same value as said second output voltage;

a third voltage-controlled type power source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said third output voltage and outputs a fifth output voltage having the same value as said third output voltage;

a third diode having a predetermined junction capacitance characteristic receives an input of said fourth output voltage and outputs a first output current corresponding to said fourth output voltage;

a capacitor having a predetermined electrostatic capacity characteristic receives an input of said fifth output voltage and outputs a second output current corresponding to said fifth output voltage; and

a current-controlled type current source, whose terminals on an input side are insulated from terminals on an output side, receives inputs of said first output current and said second output current and causes a third current having the same value as said first output current and said second output current to flow between said gate electrode and said drain electrode.

3. A simulation circuit for a MOS transistor for doing simulation testing of said MOS transistor using a netlist showing internal configurations of said MOS transistor, said simulation circuit comprising:

a feedback capacitor formed between a gate electrode and a drain electrode of said MOS transistor; and

wherein said feedback capacitor includes;

a first voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of a drain-gate voltage being a voltage between said gate electrode and said drain electrode and outputs a first output voltage having the same value as said drain-gate voltage;

a bidirectional diode having a first diode and a second diode, both of which have no junction capacitance and are connected in series so that said first diode and said second diode are opposite in polarity, wherein said bidirectional diode receives an input of said first output voltage and, when said first output voltage is positive, outputs a second output voltage having almost the same value as said first output voltage from said first diode and, when said first output voltage is negative, outputs a third output voltage having almost the same value as said first output voltage from said second diode and, when said first output voltage is almost 0 (zero) volts, outputs said second output voltage and said third output voltage each being half said first output voltage from said first diode and said second diode respectively;

a second voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said second output voltage and outputs a fourth output voltage having the same value as said second output voltage;

a third voltage-controlled type power source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said third output voltage and outputs a fifth output voltage having the same value as said third output voltage;

a third diode having a predetermined junction capacitance characteristic receives an input of said fourth output voltage and outputs a first output current corresponding to said fourth output voltage;

a capacity characteristic correcting element being connected in parallel to said third diode and being used to correct said junction capacitance characteristic of said third diode so as to provide a desired junction capacitance characteristic;

a capacitor having a predetermined electrostatic capacity characteristic receives an input of said fifth output voltage and outputs a second output current corresponding to said fifth output voltage; and

a current-controlled type current source, whose terminals on an input side are insulated from terminals on an output side, receives inputs of said first output current and said second output current and causes a third current having the same value as said first output current and said second output current to flow between said gate electrode and said drain electrode.

4. The simulation circuit for said MOS transistor according to claim 3, wherein said capacity characteristic correcting element is made up of a capacitor having a predetermined electrostatic capacity characteristic or a diode having a predetermined junction capacitance characteristic.

5. A method for simulation testing of a MOS transistor in which a feedback capacitor is formed between a gate electrode and a drain electrode by using a simulation circuit of said MOS transistor and by using a netlist showing configurations of said MOS transistor, said method comprising:

a step of configuring said feedback capacitor in said simulation circuit using a first voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, which receives an input of a drain-gate voltage being a voltage between said gate electrode and said drain electrode and outputs a first output voltage having the same value as said drain-gate voltage;

a step of configuring said feedback capacitor in said simulation circuit using a bidirectional diode having a first diode and a second diode, both of which have no junction capacitance and are connected in series so that said first diode and said second diode are opposite in polarity, wherein said bidirectional diode receives an input of said first output voltage and, when said first output voltage is positive, outputs a second output voltage having almost the same value as said first output voltage from said first diode and, when said first output voltage is negative, outputs a third output voltage having almost the same value as said first output voltage from said second diode and, when said first output voltage is almost 0 (zero) volts, outputs said second output voltage and said third output voltage each being half said first output voltage from said first diode and said second diode respectively;

a step of configuring said feedback capacitor in said simulation circuit using a second voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, which receives an input of said second output voltage and outputs a fourth output voltage having the same value as said second output voltage;

a step of configuring said feedback capacitor in said simulation circuit using a third voltage-controlled type power source, whose terminals on an input side are insulated from terminals on an output side, which receives an input of said third output voltage and outputs a fifth output voltage having the same value as said third output voltage;

a step of configuring said feedback capacitor in said simulation circuit using a third diode having a predetermined junction capacitance characteristic which receives an input of said fourth output voltage and outputs a first output current corresponding to said fourth output voltage;

a step of configuring said feedback capacitor in said simulation circuit using a capacitor having a predetermined electrostatic capacity characteristic which receives an input of said fifth output voltage and outputs a second output current corresponding to said fifth output voltage;

a step of configuring said feedback capacitor in said simulation circuit using a current-controlled type current source, whose terminals on an input side are insulated from terminals on an output side, which receives inputs of said first output current and said second output current and causes a third current having the same value as said first output current and said second output current to flow between said gate electrode and said drain electrode; and

wherein a value of said feedback capacitor is calculated based on said third output current.

6. A method for simulation testing of a MOS transistor in which a feedback capacitor is formed between a gate electrode and a drain electrode by using a simulation circuit of said MOS transistor and by using a netlist showing configurations of said MOS transistor, said method comprising:

a step of configuring said feedback capacitor in said simulation circuit using a first voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, which receives an input of a drain-gate voltage being a voltage between said gate electrode and said drain electrode and outputs a first output voltage having the same value as said drain-gate voltage;

a step of configuring said feedback capacitor in said simulation circuit using a bidirectional diode having a first diode and a second diode, both of which have no junction capacitance and are connected in series so that said first diode and said second diode are opposite in polarity, wherein said bidirectional diode receives an input of said first output voltage and, when said first output voltage is positive, outputs a second output voltage having almost the same value as said first output voltage from said first diode and, when said first output voltage is negative, outputs a third output voltage having almost the same value as said first output voltage from said second diode and, when said first output voltage is almost 0 (zero) volts, outputs said second output voltage and said third output voltage each being half said first output voltage from said first diode and said second diode respectively;

a step of configuring said feedback capacitor in said simulation circuit using a second voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, which receives an input of said second output voltage and outputs a fourth output voltage having the same value as said second output voltage;

a step of configuring said feedback capacitor in said simulation circuit using a third voltage-controlled type power source, whose terminals on an input side are insulated from terminals on an output side, which receives an input of said third output voltage and outputs a fifth output voltage having the same value as said third output voltage;

a step of configuring said feedback capacitor in said simulation circuit using a third diode having a predetermined junction capacitance characteristic which receives an input of said fourth output voltage and outputs a first output current corresponding to said fourth output voltage;

a step of configuring said feedback capacitor in said simulation circuit using a capacity characteristic correcting element which is connected in parallel to said third diode and is used to correct said junction capacitance characteristic of said third diode so as to provide a desired junction capacitance characteristic;

a step of configuring said feedback capacitor in said simulation circuit using a capacitor having a predetermined electrostatic capacity characteristic which receives an input of said fifth output voltage and outputs a second output current corresponding to said fifth output voltage; and

a step of configuring said feedback capacitor in said simulation circuit using a current-controlled type current source, whose terminals on an input side are insulated from terminals on an output side, which receives inputs of said first output current and said second output current and causes a third current having the same value as said first output current and said second output current to flow between said gate electrode and said drain electrode; and

wherein a value of said feedback capacitor is calculated based on said third output current.

7. A storage medium storing a netlist to implement a simulation circuit of MOS (Metal Oxide Semiconductor) transistors on a computer, said simulation circuit comprising:

a feedback capacitor formed between a gate electrode and a drain electrode of said MOS transistor; and

wherein said feedback capacitor includes a diode having a predetermined junction capacitance characteristic and a diode having a predetermined electrostatic capacity characteristic and wherein said junction capacitance characteristic of said diode is chiefly displayed when an absolute value of a voltage of said drain electrode is larger than an absolute value of a voltage of said gate electrode and said electrostatic capacity characteristic of said capacitor is chiefly displayed when said absolute value of a voltage of said drain electrode is smaller than said absolute value of a voltage of said gate electrode and said junction capacitance characteristic of said diode and said electrostatic capacity characteristic of said capacitor are equally displayed when said absolute value of said voltage of said gate electrode is almost same as said absolute value of said voltage of said drain electrode,

hereby doing simulation testing of said MOS transistor using a netlist showing internal configurations of said MOS transistor.

8. A storage medium storing a netlist to implement a simulation circuit of MOS (Metal Oxide Semiconductor) transistors on a computer, said simulation circuit comprising:

a feedback capacitor formed between a gate electrode and a drain electrode of said MOS transistor; and

wherein said feedback capacitor includes;

a first voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of a drain-gate voltage being a voltage between said gate electrode and said drain electrode and outputs a first output voltage having the same value as said drain-gate voltage;

a bidirectional diode having a first diode and a second diode, both of which have no junction capacitance and are connected in series so that said first diode and said second diode are opposite in polarity, wherein said bidirectional diode receives an input of said first output voltage and, when said first output voltage is positive, outputs a second output voltage having almost the same value as said first output voltage from said first diode and, when said first output voltage is negative, outputs a third output voltage having almost the same value as said first output voltage from said second diode and, when said first output voltage is almost 0 (zero) volts, outputs said second output voltage and said third output voltage each being half said first output voltage from said first diode and said second diode respectively;

a second voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said second output voltage and outputs a fourth output voltage having the same value as said second output voltage;

a third voltage-controlled type power source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said third output voltage and outputs a fifth output voltage having the same value as said third output voltage;

a third diode having a predetermined junction capacitance characteristic receives an input of said fourth output voltage and outputs a first output current corresponding to said fourth output voltage;

a capacitor having a predetermined electrostatic capacity characteristic receives an input of said fifth output voltage and outputs a second output current corresponding to said fifth output voltage; and

a current-controlled type current source, whose terminals on an input side are insulated from terminals on an output side, receives inputs of said first output current and said second output current and causes a third current having the same value as said first output current and said second output current to flow between said gate electrode and said drain electrode,

hereby doing simulation testing of said MOS transistor using a netlist showing internal configurations of said MOS transistor.

9. A storage medium storing a netlist to implement a simulation circuit of MOS (Metal Oxide Semiconductor) transistors on a computer, said simulation circuit comprising:

a feedback capacitor formed between a gate electrode and a drain electrode of said MOS transistor; and

wherein said feedback capacitor includes;

a first voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of a drain-gate voltage being a voltage between said gate electrode and said drain electrode and outputs a first output voltage having the same value as said drain-gate voltage;

a bidirectional diode having a first diode and a second diode, both of which have no junction capacitance and are connected in series so that said first diode and said second diode are opposite in polarity, wherein said bidirectional diode receives an input of said first output voltage and, when said first output voltage is positive, outputs a second output voltage having almost the same value as said first output voltage from said first diode and, when said first output voltage is negative, outputs a third output voltage having almost the same value as said first output voltage from said second diode and, when said first output voltage is almost 0 (zero) volts, outputs said second output voltage and said third output voltage each being half said first output voltage from said first diode and said second diode respectively;

a second voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said second output voltage and outputs a fourth output voltage having the same value as said second output voltage;

a third voltage-controlled type power source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said third output voltage and outputs a fifth output voltage having the same value as said third output voltage;

a third diode having a predetermined junction capacitance characteristic receives an input of said fourth output voltage and outputs a first output current corresponding to said fourth output voltage;

a capacity characteristic correcting element being connected in parallel to said third diode and being used to correct said junction capacitance characteristic of said third diode so as to provide a desired junction capacitance characteristic;

a capacitor having a predetermined electrostatic capacity characteristic receives an input of said fifth output voltage and outputs a second output current corresponding to said fifth output voltage; and

a current-controlled type current source, whose terminals on an input side are insulated from terminals on an output side, receives inputs of said first output current and said second output current and causes a third current having the same value as said first output current and said second output current to flow between said gate electrode and said drain electrode;

hereby doing simulation testing of said MOS transistor using a netlist showing internal configurations of said MOS transistor.

10. A netlist for showing internal configurations of MOS transistor (Metal Oxide Semiconductor) and for implementing a simulation circuit of said MOS transistors on a computer, said simulation circuit comprising:

a feedback capacitor formed between a gate electrode and a drain electrode of said MOS transistor; and

wherein said feedback capacitor includes a diode having a predetermined junction capacitance characteristic and a diode having a predetermined electrostatic capacity characteristic and wherein said junction capacitance characteristic of said diode is chiefly displayed when an absolute value of a voltage of said drain electrode is larger than an absolute value of a voltage of said gate electrode and said electrostatic capacity characteristic of said capacitor is chiefly displayed when said absolute value of a voltage of said drain electrode is smaller than said absolute value of a voltage of said gate electrode and said junction capacitance characteristic of said diode and said electrostatic capacity characteristic of said capacitor are equally displayed when said absolute value of said voltage of said gate electrode is almost same as said absolute value of said voltage of said drain electrode,

hereby doing simulation testing of said MOS transistor.

11. A netlist for showing internal configurations of MOS transistor (Metal Oxide Semiconductor) and for implementing a simulation circuit of said MOS transistors on a computer, said simulation circuit comprising:

a feedback capacitor formed between a gate electrode and a drain electrode of said MOS transistor; and

wherein said feedback capacitor includes;

a first voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of a drain-gate voltage being a voltage between said gate electrode and said drain electrode and outputs a first output voltage having the same value as said drain-gate voltage;

a bidirectional diode having a first diode and a second diode, both of which have no junction capacitance and are connected in series so that said first diode and said second diode are opposite in polarity, wherein said bidirectional diode receives an input of said first output voltage and, when said first output voltage is positive, outputs a second output voltage having almost the same value as said first output voltage from said first diode and, when said first output voltage is negative, outputs a third output voltage having almost the same value as said first output voltage from said second diode and, when said first output voltage is almost 0 (zero) volts, outputs said second output voltage and said third output voltage each being half said first output voltage from said first diode and said second diode respectively;

a second voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said second output voltage and outputs a fourth output voltage having the same value as said second output voltage;

a third voltage-controlled type power source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said third output voltage and outputs a fifth output voltage having the same value as said third output voltage;

a third diode having a predetermined junction capacitance characteristic receives an input of said fourth output voltage and outputs a first output current corresponding to said fourth output voltage;

a capacitor having a predetermined electrostatic capacity characteristic receives an input of said fifth output voltage and outputs a second output current corresponding to said fifth output voltage; and

a current-controlled type current source, whose terminals on an input side are insulated from terminals on an output side, receives inputs of said first output current and said second output current and causes a third current having the same value as said first output current and said second output current to flow between said gate electrode and said drain electrode,

hereby doing simulation testing of said MOS transistor.

12. A netlist for showing internal configurations of MOS transistor (Metal Oxide Semiconductor) and for implementing a simulation circuit of said MOS transistors on a computer, said simulation circuit comprising:

a feedback capacitor formed between a gate electrode and a drain electrode of said MOS transistor; and

wherein said feedback capacitor includes;

a first voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of a drain-gate voltage being a voltage between said gate electrode and said drain electrode and outputs a first output voltage having the same value as said drain-gate voltage;

a bidirectional diode having a first diode and a second diode, both of which have no junction capacitance and are connected in series so that said first diode and said second diode are opposite in polarity, wherein said bidirectional diode receives an input of said first output voltage and, when said first output voltage is positive, outputs a second output voltage having almost the same value as said first output voltage from said first diode and, when said first output voltage is negative, outputs a third output voltage having almost the same value as said first output voltage from said second diode and, when said first output voltage is almost 0 (zero) volts, outputs said second output voltage and said third output voltage each being half said first output voltage from said first diode and said second diode respectively;

a second voltage-controlled type voltage source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said second output voltage and outputs a fourth output voltage having the same value as said second output voltage;

a third voltage-controlled type power source, whose terminals on an input side are insulated from terminals on an output side, receives an input of said third output voltage and outputs a fifth output voltage having the same value as said third output voltage;

a third diode having a predetermined junction capacitance characteristic receives an input of said fourth output voltage and outputs a first output current corresponding to said fourth output voltage;

a capacity characteristic correcting element being connected in parallel to said third diode and being used to correct said junction capacitance characteristic of said third diode so as to provide a desired junction capacitance characteristic;

a capacitor having a predetermined electrostatic capacity characteristic receives an input of said fifth output voltage and outputs a second output current corresponding to said fifth output voltage; and

a current-controlled type current source, whose terminals on an input side are insulated from terminals on an output side, receives inputs of said first output current and said second output current and causes a third current having the same value as said first output current and said second output current to flow between said gate electrode and said drain electrode;

hereby doing simulation testing of said MOS transistor.