Generating mask layout data for simulation of lithographic processes

• US 6,631,511 B2
• Filed: 09/07/2001
• Issued: 10/07/2003
• Est. Priority Date: 09/07/2000
• Status: Expired due to Term

• Current Assignee: Polaris Innovations Limited (Wi-LAN Inc.)
• Original Assignee: Infineon Technologies AG
• Inventors: Semmler, Armin, Friedrich, Christoph, Haffner, Henning
• Primary Examiner(s): Garbowski, Leigh M.
• Assistant Examiner(s): DO, THUAN V
• Application Number:
  US09/949,511
• Publication Number:
  US 20020083408A1
• Time in Patent Office: 760 Days
• Field of Search: 716/2, 716/19, 716/20, 716/21
• US Class Current: 716/52
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70433 Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions

Abstract

A method for generating mask layout data for lithography simulation includes prescribing original data defining an original layout of a mask and determining a deviation between the original layout and a subsequent layout of a mask derived from said original layout. On the basis of this deviation, new data defining a new layout is calculated. This new layout is more similar to the subsequent layout that it is to the original layout.

Claims

1. A method for generating mask layout data for lithography simulation, in which

original data that define an original layout are prescribed,

new data that define a new layout are automatically calculated proceeding from the original data,

and in which the new layout is more similar, with regard to the geometry, to a mask that is produced or can be produced using the original data than to the original layout,

wherein the new data are calculated on the basis of rules that are based on deviations in the geometry of a layout from a mask that is produced according to this layout or a mask that is modeled proceeding from this layout with simulation of the steps of the production process, the rules containing geometric calculation specifications for defining the boundaries of a structure at a position of the new layout depending on the length and/or the area of a reference structure located at the same position in the original layout and/or depending on the distance between the reference structure and adjacent structures.

2. The method of claim 1,

wherein, in accordance with a rule, a shortening value is determined for an elongate reference structure at a position of the original layout, and

wherein, depending on the shortening value, the structure located at the same position in the new layout is shortened in a longitudinal direction in comparison with the reference structure.

3. The method of claim 2,

wherein, in accordance with a correction rule, depending on the shortening value, a lengthening value is determined for a reference structure at a position of the original layout, and

wherein, depending on the lengthening value, the structure located at the same position in the corrected layout is lengthened in the longitudinal direction in comparison with the structure located at the same position in the new layout.

4. The method of claim 1,

wherein, in accordance with a rule, a cornered reference structure is determined at a position of the original layout,

wherein at least one radius-of-curvature value for rounding a corner is determined or prescribed, and

wherein, depending on the radius-of-curvature value, the structure located at the same position in the new layout has a rounded edge profile instead of the corner.

5. The method of claim 4,

wherein, in accordance with a correction rule, depending on the radius-of-curvature value, a lengthening value is determined for a reference structure at a position of the original layout, and

wherein, depending on the lengthening value, the structure located at the same position in the corrected layout is lengthened in a longitudinal direction and/or widened in a transverse direction in comparison with the structure located at the same position in the new layout.

6. The method of claim 4, wherein, in the case of a light-absorbing structure located around a light-transmissive structure, an inner corner is rounded with a smaller radius than an outer corner of the light-absorbing structure.

7. The method of claim 6,

wherein, in accordance with a correction rule, depending on a constriction value, a widening value is determined for a reference structure at a position of the original layout, and

wherein, depending on the widening value, the structure located at the same position in the corrected layout is widened at least in sections transversely with respect to the longitudinal direction in comparison with the structure located at the same position in the new layout.

8. The method of claim 1, wherein,

in accordance with a rule, a constriction value is determined for an elongate reference structure at a position of the original layout, and

wherein, depending on the constriction value, the structure located at the same position in the new layout is constricted at least in sections transversely with respect to a longitudinal direction in comparison with the reference structure.

9. A data-processing system for generating mask layout data, said data-processing system being configured to implement the method recited in claim 1.

10. A computer-readable medium having encoded thereon instructions for causing a data processing system to execute a command sequence implementing method steps of claim 1.

11. An integrated circuit structure comprising a circuit structure produced using a mask based on data generated with the aid of a method of claim 1.

12. A method for generating optimized mask layout data for photomasks,

in which original data that define an original layout are prescribed,

in which new data that define a new layout are calculated proceeding from the original data, the new data being calculated on the basis of correction rules based on deviations in the geometry of a layout from a mask produced according to this layout or a mask that is modeled proceeding from this layout with simulation of the production process;

wherein, in accordance with a correction rule, depending on a shortening value, a lengthening value is determined for a reference structure at a position of the original layout, and

wherein, depending on the lengthening value, the structure located at the same position in the corrected layout is lengthened in a longitudinal direction in comparison with the structure located at the same position in the new layout, and

in which the geometry of the new layout is more similar to a mask that is produced or can be produced using the original data than to the original layout,

wherein corrected data of a corrected layout are automatically defined proceeding from the new data in such a way that a corrected mask that is produced or can be produced using the corrected data is more similar, with regard to the geometry, to the original layout than to a mask that is produced or can be produced using the original data, and/or

wherein the corrected mask that is produced or can be produced using the corrected data has lithographic properties that differ from those of a mask that is produced or can be produced using the original data.

13. The method of claim 12, wherein the ratio of the dark areas and of the bright areas of the original layout is preserved in the corrected layout or is changed by a prescribed value.

14. The method of claim 12,

wherein, in accordance with a correction rule, depending on the radius-of-curvature value, a lengthening value is determined for a reference structure at a position of the original layout, and

wherein, depending on the lengthening value, the structure located at the same position in the corrected layout is lengthened in the longitudinal direction and/or widened in the transverse direction in comparison with the structure located at the same position in the new layout.

15. The method of claim 12,

wherein, in accordance with a correction rule, depending on the constriction value, a widening value is determined for a reference structure at a position of the original layout,

and wherein, depending on the widening value, the structure located at the same position in the corrected layout is widened at least in sections transversely with respect to the longitudinal direction in comparison with the structure located at the same position in the new layout.

16. The method of claim 12, wherein the lengthening and/or the widening is implemented essentially while maintaining the form of the structure in the original layout.

17. The method of claim 12, wherein simple structures are attached in the course of the lengthening and/or widening.

18. A method for generating mask layout data for lithography simulation, said method comprising:

prescribing original data defining an original layout of a mask;

determining a deviation between said original layout and a subsequent layout of a mask derived from said original layout; and

on the basis of said deviation, calculating new data defining a new layout, said new layout being more similar to said subsequent layout that it is to said original layout.

19. The method of claim 18, wherein determining a deviation comprises simulating lithographic processing steps to obtain said subsequent layout.

20. The method of claim 18, wherein determining a deviation comprises performing lithographic processing steps to obtain said subsequent layout.

21. The method of claim 18, wherein calculating new data comprises applying a rule defining, on the basis of a geometric parameter associated with a reference structure on said original layout, a corresponding structure on said new layout.

22. The method of claim 21, further comprising selecting said geometric parameter from the group consisting of:

an area of said reference structure;

a length of said reference structure;

a separation between said reference structure and a proximate structure on said original layout;

a position of said reference structure on said original layout; and

a shape of said reference structure.

23. The method of claim 21, wherein, applying a rule comprises

determining a scaling value for said reference structure on said original layout, and

scaling said corresponding structure on said new layout by in a manner dependent on said scaling value.

24. The method of claim 23, wherein determining a scaling value comprises determining a shortening value.

25. The method of claim 23, wherein determining a scaling value comprises determining a lengthening value.

26. The method of claim 21, wherein applying a rule comprises:

determining at least one radius-of-curvature value for rounding a corner of said reference structure, and

rounding a corresponding corner of said corresponding structure by an amount dependent on said at least one radius-of-curvature value.

27. The method of claim 26, further comprising

determining, on the basis of said radius-of-curvature value, a scaling value for said reference structure, and

scaling said corresponding structure on said new layout in a manner dependent on said scaling value.

28. The method of claim 26, wherein, in the case of a light-absorbing structure located around a light-transmissive structure, an inner corner is rounded with a smaller radius than an outer corner of the light-absorbing structure.

29. The method of claim 21, wherein applying a rule comprises:

determining a constriction value for said reference structure on said original layout, and

constricting said corresponding structure on said new layout in a manner dependent on said constriction value.

30. A method for generating optimized mask layout data for photomasks,

in which original data that define an original layout are prescribed,

in which new data that define a new layout are calculated proceeding from the original data, the new data being calculated on the basis of correction rules based on deviations in the geometry of a layout from a mask produced according to this layout or a mask that is modeled proceeding from this layout with simulation of the production process;

wherein, in accordance with a correction rule, depending on a radius-of-curvature value, a lengthening value is determined for a reference structure at a position of the original layout, and

wherein, depending on the lengthening value, the structure located at the same position in the corrected layout is lengthened in a longitudinal direction and/or widened in a transverse direction in comparison with the structure located at the same position in the new layout, and

in which the geometry of the new layout is more similar to a mask that is produced or can be produced using the original data than to the original layout,

wherein corrected data of a corrected layout are automatically defined proceeding from the new data in such a way that a corrected mask that is produced or can be produced using the corrected data is more similar, with regard to the geometry, to the original layout than to a mask that is produced or can be produced using the original data, and/or

wherein the corrected mask that is produced or can be produced using the corrected data has lithographic properties that differ from those of a mask that is produced or can be produced using the original data.

31. The method of claim 30, wherein the ratio of the dark areas and of the bright areas of the original layout is preserved in the corrected layout or is changed by a prescribed value.

32. The method of claim 30,

wherein, in accordance with a correction rule, depending on the shortening value, a lengthening value is determined for a reference structure at a position of the original layout, and

wherein, depending on the lengthening value, the structure located at the same position in the corrected layout is lengthened in the longitudinal direction in comparison with the structure located at the same position in the new layout.

33. The method of claim 30,

wherein, in accordance with a correction rule, depending on the constriction value, a widening value is determined for a reference structure at a position of the original layout,

and wherein, depending on the widening value, the structure located at the same position in the corrected layout is widened at least in sections transversely with respect to the longitudinal direction in comparison with the structure located at the same position in the new layout.

34. The method of claim 30, wherein the lengthening and/or the widening is implemented essentially while maintaining the form of the structure in the original layout.

35. The method of claim 30, wherein simple structures are attached in the course of the lengthening and/or widening.

36. A method for generating optimized mask layout data for photomasks,

in which new data that define an new layout are prescribed,

in which new data that define a new layout are calculated proceeding from the new data, the new data being calculated on the basis of correction rules based on deviations in the geometry of a layout from a mask produced according to this layout or a mask that is modeled proceeding from this layout with simulation of the production process;

wherein, in accordance with a correction rule, depending on a constriction value, a widening value is determined for a reference structure at a position of the new layout,

and wherein, depending on the widening value, the structure located at the same position in a corrected layout is widened at least in sections transversely with respect to a longitudinal direction in comparison with the structure located at the same position in the new layout, and

in which the geometry of the new layout is more similar to a mask that is produced or can be produced using the new data than to the new layout,

wherein corrected data of a corrected layout are automatically defined proceeding from the new data in such a way that a corrected mask that is produced or can be produced using the corrected data is more similar, with regard to the geometry, to the new layout than to a mask that is produced or can be produced using the new data, and/or

wherein the corrected mask that is produced or can be produced using the corrected data has lithographic properties that differ from those of a mask that is produced or can be produced using the new data.

37. The method of claim 36, wherein the ratio of the dark areas and of the bright areas of the new layout is preserved in the corrected layout or is changed by a prescribed value.

38. The method of claim 36,

wherein, in accordance with a correction rule, depending on the shortening value, a lengthening value is determined for a reference structure at a position of the new layout, and

wherein, depending on the lengthening value, the structure located at the same position in the corrected layout is lengthened in the longitudinal direction in comparison with he structure located at the same position in the new layout.

39. The method of claim 36,

wherein, in accordance with a correction rule, depending on the radius-of-curvature value, a lengthening value is determined for a reference structure at a position of the new layout, and

wherein, depending on the lengthening value, the structure located at the same position in the corrected layout is lengthened in the longitudinal direction and/or widened in the transverse direction in comparison with the structure located at the same position in the new layout.

40. The method of claim 36, wherein the lengthening and/or the widening is implemented essentially while maintaining the form of the structure in the new layout.

41. The method of claim 36, wherein simple structures are attached in the course of the lengthening and/or widening.