Switched uniformity control

• US 6,632,322 B1
• Filed: 06/30/2000
• Issued: 10/14/2003
• Est. Priority Date: 06/30/2000
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Gottscho, Richard A., Steger, Robert J.
• Primary Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US09/607,599
• Time in Patent Office: 1,201 Days
• Field of Search: 156/345, 156/345.33, 156/345.34, 156/345.41, 156/345.43, 156/345.47, 156/345.48, 118/715, 118/723.R, 118/723.E, 118/723.I, 118/723.AN, 118/723.MW
• US Class Current: 156/345.33
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means

Abstract

A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for directing the component to at least one of the plurality of component outputs. The component delivery mechanism also includes a single component source coupled to the spatial distribution switch. The single component source is arranged for supplying the component to the spatial distribution switch.

Claims

1. A component delivery mechanism for distributing a component inside a process chamber, the component being used to process a work piece within the process chamber, the component delivery mechanism, comprising:

a plurality of component outputs for outputting the component to a desired region of the process chamber, the plurality of component outputs including at least a first component output arranged to output the component to a first region of the process chamber and a second component output arranged to output the component to a second region of the process chamber, the first region of the process chamber corresponding to a center portion of the work piece and the second region corresponding to an outer portion of the work piece; and

a spatial distribution switch being arranged for directing the component to the plurality of component outputs, the spatial distribution switch having a first condition, directing the component to the first component output, and a second condition, directing the component to the second component output, the spatial distribution switch being arranged to perform time modulation between conditions so as to spatially distribute the component inside the process chamber during processing.

2. The component delivery mechanism as recited in claim 1 wherein the spatial distribution switch is arranged to stay in one condition for a predetermined amount of time to effect the concentration of the component inside the process chamber during processing.

3. The component delivery mechanism as recited in claim 1 wherein the component is a gaseous source material, wherein the single component source is a gas supply box for supplying the gaseous source material, and wherein the component outputs are gas injection ports for releasing the gaseous source material into the process chamber.

4. The component delivery mechanism as recited in claim 3 wherein the plurality of gas injection ports include at least a first gas injection port and a second gas injection port, and wherein the spatial distribution switch has a first condition, directing the gaseous source material to the first gas injection port, and a second condition, directing the gaseous source material to the second gas injection port.

5. The component delivery mechanism as recited in claim 4 wherein the first gas injection port is arranged to release the gaseous source material into a first region of the process chamber, and wherein the second gas injection port is arranged to release the gaseous source material into a second region of the process chamber.

6. The component delivery mechanism as recited in claim 5 wherein the first region of the process chamber corresponds to a center portion of the work piece, and wherein the second region of the process chamber corresponds to an outer portion of the work piece.

7. The component delivery mechanism as recited in claim 5 wherein the spatial distribution switch is arranged to modulate between conditions to spatially distribute the gaseous source materials between the first gas injection port and the second gas injection port thereby effecting the concentration of the gaseous source materials between the first and second region of the process chamber during processing.

8. The component delivery mechanism as recited in claim 1 wherein the component is energy, wherein the single component source is a power supply for supplying energy, and wherein the component outputs are electrode coils for producing an electric field inside the process chamber.

9. The component delivery mechanism as recited in claim 8 wherein the plurality of electrode coils include at least a first coil and a second coil, and wherein the spatial distribution switch has a first condition, directing the energy to the first coil, and a second condition, directing the energy to the second coil.

10. The component delivery mechanism as recited in claim 9 wherein the first coil is arranged to produce an electric field inside a first region of the process chamber, and wherein the second coil is arranged to produce an electric field inside a second region of the process chamber.

11. The component delivery mechanism as recited in claim 10 wherein the spatial distribution switch is arranged to modulate between conditions to spatially distribute the energy between the first coil and the second coil thereby effecting the concentration of the electric field between the first and second region of the process chamber during processing.

12. The component delivery mechanism as recited in claim 1 wherein the work piece is a semiconductor substrate.

13. The component delivery mechanism as recited in claim 1 wherein the component delivery mechanism is used in a plasma reactor to effect the amount of ions and neutrals inside the process chamber so as to uniformly process the work piece.

14. The component delivery mechanism as recited in claim 1 wherein the plurality of component outputs are distinct from one another such that they separately output the component to the process chamber.

15. The component delivery mechanism as recited in claim 14 wherein the spatial distribution switch selectively distributes the supplied component between the distinct component outputs.

16. The component delivery mechanism as recited in claim 15 wherein the spatial distribution switch distributes the component to only one of the distinct component outputs at given time.

17. The component delivery mechanism as recited in claim 1 further including a component source coupled to the spatial distribution switch, the single component source being arranged for supplying the component to the spatial distribution switch.

18. A component delivery mechanism for distributing a component inside a process chamber, the component being used to process a work piece within the process chamber, the component delivery mechanism, comprising:

a component source for supplying the component;

a spatial distribution switch having a single input for receiving the component from the component source, and at least a first output and a second output for discharging the component, the switch having at least a first condition, directing the component through the first output, and a second condition, directing the component through the second output;

at least a first component output and a second component output, the first component output being coupled to the first output of the spatial distribution switch, and the second component output being coupled to the second output of the spatial distribution switch, the first component output being arranged for outputting the component into an inner region of the process chamber, the second component output being arranged for outputting the component into an outer region of the process chamber, the first region of the process chamber corresponding to a center portion of the work piece and the second region corresponding to an outer portion of the work piece; and

a controller for controlling the spatial distribution switch, the controller being configured for directing the spatial distribution switch between at least the first and second conditions, the controller performing time multiplexing with the spatial distribution switch so as to effect the concentration of the component in the inner and outer regions of the process chamber.

19. A component delivery mechanism for distributing a component inside a process chamber, the component being used to process a work piece within the process chamber, the component delivery mechanism, comprising:

a plurality of component outputs for outputting the component to a desired region of the process chamber, the plurality of component outputs including at least a first component output arranged to output the component to a first region of the process chamber and a second component output arranged to output the component to a second region of the process chamber, the first region of the process chamber corresponding to a center portion of the work piece and the second region corresponding to an outer portion of the work piece; and

a spatial distribution switch being arranged for directing the component to the plurality of component outputs, the spatial distribution switch utilizing time modulation to direct the component to the first component output at a first time, and to direct the component to the second component output at a second time,

wherein the component that is outputted into the process chamber via the component outputs and spatial distribution switch is part of a process recipe that is configured to ignite and sustain a plasma inside the process chamber.

20. The component delivery mechanism as recited in claim 19 wherein the spatial distribution switch selectively distributes the supplied component between the distinct outputs.

21. The component delivery mechanism as recited in claim 20 wherein the spatial distribution switch distributes the supplied component to only one of the distinct outputs at a given time.

22. A component delivery mechanism for distributing a plasma forming component inside a process chamber, the plasma forming component being used to process a work piece within the process chamber, the component delivery mechanism, comprising:

a spatial distribution switch for controlling the distribution of the plasma forming component into the process chamber so as to ignite and sustain a plasma inside the process chamber, the spatial distribution switch having an inlet for receiving the component from a component source configured for supplying the component, and at least two distinct outlets for separately delivering the component to at least two spatially distinct component outputs configured for outputting the component directly into the process chamber, the spatial distribution switch including a first outlet for delivering the component to a first component output configured for outputting the component directly into an inner region of the process chamber and a second outlet for delivering the component to a second component output configured for outputting the component directly into an outer region of the process chamber, the spatial distribution switch being configured to selectively distribute the received component between the first and second outlets via time multiplexing so as to effect the concentration of the component in the inner and outer region of the process chamber.

23. The component delivery mechanism as recited in claim 22 wherein the inlet is capable of coupling to a component source configured to output the component, and wherein the two distinct outlets are capable of coupling to two distinct component outputs for outputting the component to different regions of the process chamber.

24. A plasma reactor for processing a semiconductor substrate, comprising:

a process chamber in which a plasma is ignited and sustained for processing the semiconductor substrate, the process chamber including an inner process zone and an outer process zone, the inner process zone being positioned over an inner region of the semiconductor substrate, the outer process zone being positioned over an outer region of the semiconductor substrate;

a gas injection mechanism configured to distribute gaseous source materials into the process chamber, the gas injection mechanism comprising a single gas supply, a gas injection port and a gas distribution switch, the single gas supply being configured to deliver the gaseous source materials to the gas injection port, the gas injection port being configured to release the gaseous source materials into the process chamber, the gas injection port being divided into a plurality of individual and spatially distinct ports including at least an inner port arranged to release the gaseous source materials into the inner process zone of the process chamber and an outer port arranged to release the gaseous source materials into the outer process zone of the process chamber, the inner and outer ports being coupled to the single gas supply through the gas distribution switch, the gas distribution switch being configured to direct the gaseous source material supplied by the single gas supply to the inner or outer port, wherein the gaseous source materials are introduced into the process chamber through at least one of the ports in order to create the plasma inside the process chamber.

25. The plasma reactor as recited in claim 24 further comprising a power delivery mechanism configured to produce an electric field inside the process chamber, wherein the electric field accelerates the electrons present inside the process chamber causing them to collide with the gas molecules of the gaseous source material, and wherein the collisions result in the ionization and initiation of the plasma.

26. The plasma reactor as recited in claim 24 further comprising a pedestal for supporting the substrate during processing, the pedestal including a chuck configured for receiving the backside of the semiconductor substrate when the semiconductor substrate is placed on the pedestal for processing, the chuck being configured to hold the semiconductor substrate during processing, the pedestal also including an electrode arrangement arranged to form a sheath voltage between the surface of the substrate and the plasma, the sheath voltage being configured to accelerate species of the plasma towards the semiconductor substrate.

27. The plasma reactor as recited in claim 24 further comprising a controller for controlling the spatial distribution switch, the controller being configured for directing the spatial distribution switch between at least a first condition, directing the component through the inner port, and a second condition, directing the component through the outer port, so as to effect the concentration of the gaseous source material in the inner and outer process zones of the process chamber.

28. The plasma reactor as recited in claim 24 wherein the gas supply feeds the gaseous source material to the gas distribution switch through a first gas line, and the switch depending on the switch direction supplies the gaseous source material to either a second gas line or a third gas line, the second gas line being configured to deliver the gaseous source material to the inner port and the third gas line being configured to deliver the gaseous source material to the outer port.

29. The plasma reactor as recited in claim 24 wherein the gas injection port is formed in a gas distribution plate, and wherein each of the inner and outer ports includes a plurality of apertures for releasing the gaseous source material into their respective zones of the process chamber.

30. The plasma reactor as recited in claim 24 wherein the gas supply includes a high pressure gas manifold having a plurality of gas inlet lines, each which are connected to individual gas sources and mass flow controllers, the mass flow controllers being configured to control and regulate the parameters associated with distributing the gaseous source materials to the gas distribution switch.