Controlled cleaving process

• US 6,632,724 B2
• Filed: 01/13/2000
• Issued: 10/14/2003
• Est. Priority Date: 05/12/1997
• Status: Expired due to Term

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Cheung, Nathan W., Henley, Francois J.
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): LEE, HSIEN MING
• Application Number:
  US09/483,393
• Publication Number:
  US 20020106870A1
• Time in Patent Office: 1,370 Days
• Field of Search: 438/458, 438/459, 438/455, 438/526, 438/974, 438/528, 216/33, 216/2, 216/36, 216/52, 216/56, 216/62
• US Class Current: 438/455
• CPC Class Codes: B81C 1/0038 Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
• CPC Class Codes: B81C 2201/0191 Transfer of a layer from a carrier wafer to a device wafer
• CPC Class Codes: B81C 2201/0192 by cleaving the carrier wafer
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/2236 from or into a plasma phase
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/2658 of a molecular ion, e.g. decaborane
• CPC Class Codes: H01L 21/304 Mechanical treatment, e.g. grinding, polishing, cutting H01L21/30625 takes precedence
• CPC Class Codes: H01L 21/7624 using semiconductor on insulator [SOI] technology H01L21/76297 takes precedence; manufacture of integrated circuits on insulating substrates H01L21/84; silicon on sapphire [SOS] technology H01L21/86
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/7813 leaving a reusable substrate, e.g. epitaxial lift off
• CPC Class Codes: Y10S 117/915 Separating from substrate
• CPC Class Codes: Y10S 156/93 Semiconductive product delaminating, e.g. delaminating emiconductive wafer from underlayer
• CPC Class Codes: Y10S 438/974 Substrate surface preparation
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate
• CPC Class Codes: Y10T 156/11 Methods of delaminating, per se; i.e. , separating at bonding face
• CPC Class Codes: Y10T 156/1158 Electromagnetic radiation applied to work for delamination [e.g., microwave, uv, ir, etc.]
• CPC Class Codes: Y10T 156/19 Delaminating means
• CPC Class Codes: Y10T 428/21 Circular sheet or circular blank
• CPC Class Codes: Y10T 428/24893 : including particulate material
• CPC Class Codes: Y10T 428/249956 : Void-containing component is inorganic

Abstract

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to define a donor substrate material (12) above the selected depth. An energy source is directed to a selected region of the donor substrate to initiate a controlled cleaving action of the substrate (10) at the selected depth (20), whereupon the cleaving action provides an expanding cleave front to free the donor material from a remaining portion of the donor substrate.

Claims

1. A method of producing a film of material comprising:

providing a donor substrate having a first surface;

forming a stress layer across a plane within said donor substrate and parallel to said first surface, the portion of said donor substrate between said first surface and stress layer defining a first portion of said donor substrate;

applying an amount of energy to only a part of said donor substrate to initiate a cleaving action across said stress layer; and

reducing said amount of energy subsequent to said step of applying, said cleaving action propagating across said stress layer to separate said first portion thereby producing said film of material.

2. The method of claim 1 wherein said amount of energy has an impulse characteristic.

3. The method of claim 1 wherein said amount of energy is selected from the group consisting of electrical energy, mechanical energy, chemical energy, and thermal energy.

4. The method of claim 1 further including globally increasing the energy of said donor substrate prior to said step of applying an amount of energy.

5. The method of claim 1 wherein said step of globally increasing the energy of said donor substrate includes heating said donor substrate.

6. The method of claim 1, wherein said stress layer is formed by introducing hydrogen ions within the donor substrate.

7. A method of producing a film of material comprising:

providing a donor substrate having a first surface;

reducing a fracture energy across a planar region within said donor substrate thereby defining a layer of said donor substrate between said first surface and said planar region;

applying a first energy to only a first portion of said donor substrate thereby initiating a cleaving action; and

applying a second energy to only a second portion of said donor substrate thereby propagating said cleaving action across said planar region,

wherein completion of propagation of said cleaving action across said planar region separates said layer from the remainder of said donor substrate to produce said film of material.

8. The method of claim 7 wherein said first and second energy are pulses of energy.

9. The method of claim 8 wherein said pulses of energy each is of a duration of time less than the time needed for said cleaving action to propagate across said planar region.

10. The method of claim 7 wherein said first and second energies each is selected from the group consisting of electrical energy, mechanical energy, chemical energy, and thermal energy.

11. The method of claim 7 wherein said first energy has a higher energy level than said second energy.

12. The method of claim 7 wherein said planar region is parallel to said first surface.

13. The method of claim 7 further including globally increasing the energy of said donor substrate prior to said steps of applying energy.

14. The method of claim 13 wherein said step of globally increasing the energy of said donor substrate includes heating said donor substrate.

15. The method of claim 7, further comprising:

introducing hydrogen ions within said donor substrate to define said layer of said donor substrate.

16. A method of producing a film of material comprising:

providing a donor substrate having a first surface;

increasing a mechanical stress across a planar region within said donor substrate, said planar region separated from said first surface thereby defining a layer of material between said first surface and said planar region;

globally increasing the energy of said donor substrate by an amount that does not initiate a cleaving action across said planar region; and

applying a first energy to a region less than the entirety of said donor substrate to initiate a separation action of said layer of material from said donor substrate,

said separation action proceeding to completion thereby producing said film of material.

17. The method of claim 16 further including reducing said first energy from said region prior to completion of said separation action.

18. The method of claim 16 wherein said first energy is a pulse of energy.

19. The method a of claim 16 further including applying a second energy to a second region of said donor substrate to propagate said separation action across said planar region.

20. The method of claim 19 wherein said first and second energies each is a pulse of energy of a duration of time shorter than the time needed for said separation action to propagate across said planar region.

21. The method of claim 19 wherein said first and second energies are selected from the group consisting of electrical energy, mechanical energy, chemical energy, and thermal energy.

22. The method of claim 19 wherein said first energy has an energy level higher than said second energy.

23. The method of claim 16 wherein said step of globally increasing the energy of said donor substrate includes heating said donor substrate.

24. The method of claim 16, further comprising:

introducing hydrogen ions within said donor substrate to define said layer of material.

25. A method of fabricating a film of material, the method comprising:

providing a donor substrate, said donor substrate comprising a stressed layer at a predetermined depth from an upper surface of said donor substrate and a material region defined between an upper surface and said stressed layer, said stressed layer comprising a plurality of particles therein to increase stress within a vicinity of said stressed layer, and

providing energy to only a first portion of said donor substrate to initiate a controlled cleaving action to free said material region from a remaining portion of said donor substrate.

26. The method of claim 25 wherein said energy is a pulse of energy.

27. The method of claim 25 further includes raising the global energy of said donor substrate.

28. The method of claim 25 further including providing energy to a second portion of said donor substrate to propagate said controlled cleaving action across said stressed layer.

29. The method of claim 25 wherein said providing energy to a first portion includes selecting from the group consisting of electrical energy, mechanical energy, chemical energy, and thermal energy.

30. The method of claim 29 wherein said providing energy to a second portion includes selecting from the group consisting of electrical energy, mechanical energy, chemical energy, and thermal energy.

31. The method of claim 25, further comprising:

introducing hydrogen ions within said donor substrate to define said layer of material.