Semiconductor device and method for manufacturing the semiconductor device

• US 6,633,082 B1
• Filed: 06/01/1998
• Issued: 10/14/2003
• Est. Priority Date: 05/30/1997
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Matsumoto, Akira, Oda, Noriaki
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): Rao, Shrinivas H.
• Application Number:
  US09/088,048
• Time in Patent Office: 1,961 Days
• Field of Search: 257/760, 257/758, 257/759, 257/750, 257/914, 257/751
• US Class Current: 257/750
• CPC Class Codes: H01L 21/02129 the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
• CPC Class Codes: H01L 21/02134 the material comprising hydrogen silsesquioxane, e.g. HSQ
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/3124 layers comprising hydrogen silsesquioxane
• CPC Class Codes: H01L 21/3144 on silicon
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10S 257/914 Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos

Abstract

A semiconductor device is provided and contains a substrate, a first wiring layer, a first oxide film, a dielectric film, a first nitrogen layer, a second wiring layer, a via hole, and a second nitrogen layer. The first wiring layer is formed on the substrate, and the first oxide film formed on the first wiring layer. The dielectric film has a low dielectric constant and is disposed between the first and second wiring layers. The first nitrogen layer contains nitrogen and is formed in the first oxide film. The via hole is formed through the dielectric film and is disposed between the first wiring layer and the second wiring layer for electrically connecting the first wiring layer and the second wiring layer. The second nitrogen layer contains nitrogen and is formed on a side wall of the via hole. Since the first and second nitrogen layers prevent moisture from spreading to various portions of the semiconductor device, leak current between adjacent wirings of the wiring layers is prevented. Also, the chances that an opening will not form in the via hole when the via hole is created is reduced.

Claims

1. A semiconductor device, comprising:

a substrate;

a first wiring layer;

a first oxide film, wherein said first wiring layer is disposed between said first oxide film and said substrate;

a dielectric film having a low dielectric constant, wherein said first oxide film is disposed between said dielectric film and said first wiring layer; and

a first layer containing nitrogen, wherein said first layer is formed between said first oxide film and said dielectric film,

wherein said first layer is formed by supplying a layer of said first oxide film with nitrogen ions, and

wherein a first nitrogen density of said nitrogen ions from a surface of said first layer to a first depth of 10 nm is greater than or equal to 1×

10²¹/cm³.

5. The semiconductor device as claimed in claim 1, wherein said dielectric constant of said dielectric film is less than or equal to 3.5.

2. A semiconductor device, comprising:

a substrate;

a first wiring layer;

a first oxide film, wherein said first wiring layer is disposed between said first oxide film and said substrate;

a dielectric film having a low dielectric constant, wherein said first oxide film is disposed between said dielectric film and said first wiring layer; and

a first layer containing nitrogen, wherein said first layer is formed between said first oxide film and said dielectric film,

wherein said first layer is formed by supplying a layer of said first oxide film with nitrogen ions, and

wherein a first nitrogen density of said nitrogen ions from a surface of said first layer to a first depth of 20 nm is greater than or equal to 1×

10²¹/cm³.

3. A semiconductor device, comprising:

a substrate;

a first wiring layer;

a first oxide film, wherein said first wiring layer is disposed between said first oxide film and said substrate;

a dielectric film having a low dielectric constant, wherein said first oxide film is disposed between said dielectric film and said first wiring layer; and

a first layer containing nitrogen, wherein said first layer is formed between said first oxide film and said dielectric film,

wherein said first oxide film is formed on said first wiring layer and said dielectric film is formed on said first layer,

wherein said first layer is formed by supplying a layer of said first oxide film with nitrogen ions, and

wherein a first nitrogen density of said nitrogen ions from a surface of said first layer to a first depth of 10 nm is than or equal to 1×

10²¹/cm³.

6. The semiconductor device as claimed in claim 3, wherein said dielectric constant of said dielectric film is less than or equal to 3.5.

4. A semiconductor device, comprising:

a substrate;

a first wiring layer;

a first oxide film, wherein said first wiring layer is disposed between said first oxide film and said substrate;

a dielectric film having a low dielectric constant, wherein said first oxide film is disposed between said dielectric film and said first wiring layer; and

a first layer containing nitrogen, wherein said first layer is formed between said first oxide film and said dielectric film,

wherein said first oxide film is formed on said first wiring layer and said dielectric film is formed on said first layer,

wherein said first layer is formed by supplying a layer of said first oxide film with nitrogen ions, and

wherein a first nitrogen density of said nitrogen ions from a surface of said first layer to a first depth of 20 nm is than or equal to 1×

10²¹/cm³.

7. A semiconductor device having a plurality wiring layers, comprising:

a first wiring layer;

a second wiring layer;

a dielectric film having a low dielectric constant disposed between said first wiring layer and said second wiring layer;

a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer; and

a first layer containing nitrogen formed on a side wall of said via hole,

wherein said first layer is formed by supplying said side wall of said via hole with nitrogen ions,

wherein said first layer is formed by doping said side wall of said via hole with NH₃ plasma, and

wherein a first nitrogen density of said nitrogen ions from a surface of said first layer to a first depth of 10 nm is greater than or equal to 1×

10²¹/cm³.

8. A semiconductor device having a plurality wiring layers, comprising:

a first wiring layer;

a second wiring layer;

a dielectric film having a low dielectric constant disposed between said first wiring layer and said second wiring layer;

a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer; and

a first layer containing nitrogen formed on a side wall of said via hole,

wherein said first layer is formed by supplying said side wall of said via hole with nitrogen ions,

wherein said first layer is formed by doping said side wall of said via hole with NH₃ plasma, and

wherein a first nitrogen density of said nitrogen ions from said surface of said first layer to a first depth of 20 nm is greater than or equal to 1×

10²¹/cm³.

9. A semiconductor device having a plurality wiring layers, comprising:

a first wiring layer;

a second wiring layer;

a dielectric film having a low dielectric constant disposed between said first wiring layer and said second wiring layer;

a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer; and

a first layer containing nitrogen formed on a side wall of said via hole,

wherein said first layer is formed by supplying said side wall of said via hole with nitrogen ions,

wherein said first layer is formed by implanting nitrogenous ions into said side wall of said via hole, and

wherein a first nitrogen density of said nitrogen ions from a surface of said first layer to a first depth of 10 nm is greater than or equal to 1×

10²¹/cm³.

10. A semiconductor device having a plurality wiring layers, comprising:

a first wiring layer;

a second wiring layer;

a dielectric film having a low dielectric constant disposed between said first wiring layer and said second wiring layer;

a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer; and

a first layer containing nitrogen formed on a side wall of said via hole,

wherein said first layer is formed by supplying said side wall of said via hole with nitrogen ions,

wherein said first layer is formed by implanting nitrogenous ions into said side wall of said via hole, and

wherein a first nitrogen density of said nitrogen ions from said surface of said first layer to a first depth of 20 nm is greater than or equal to 1×

10²¹/cm³.

11. A semiconductor device, comprising:

a substrate;

a first wiring layer;

a first oxide film, wherein said first wiring layer is disposed between said first oxide film and said substrate;

a dielectric film having a low dielectric constant, wherein said first oxide film is disposed between said dielectric film and said first wiring layer;

a first layer containing nitrogen, wherein said first layer is formed between said first oxide film and said dielectric film;

a second wiring layer, wherein said dielectric film is disposed between said second wiring layer and said first wiring layer;

a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer; and

a second layer containing nitrogen formed on a side wall of said via hole,

wherein said second layer is-formed by supplying said side wall of said via hole with nitrogen ions,

wherein said second layer is formed by doping said side wall of said via hole with NH₃ plasma, and

wherein a nitrogen density of said nitrogen ions from a surface of said second layer to a depth of 10 nm is greater than or equal to 1×

10²¹/cm³.

12. A semiconductor device, comprising:

a substrate;

a first wiring layer;

CD

a first oxide film, wherein said first wiring layer is disposed between said first oxide film and said substrate;

a dielectric film having a low dielectric constant, wherein said first oxide film is disposed between said dielectric film and said first wiring layer;

a first layer containing nitrogen, wherein said first layer is formed between said first oxide film and said dielectric film;

a second wiring layer, wherein said dielectric film is disposed between said second wiring layer and said first wiring layer;

a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer; and

a second layer containing nitrogen formed on a side wall of said via hole,

wherein said second layer is formed by supplying said side wall of said via hole with nitrogen ions,

wherein said second layer is formed by doping said side wall of said via hole with NH₃ plasma, and

wherein a nitrogen density of said nitrogen ions from a surface of said second layer to a depth of 20 nm is greater than or equal to 1×

10²¹/cm³.

13. A semiconductor device, comprising:

a substrate;

a first wiring layer formed at least indirectly on said substrate;

a first oxide film formed on said first wiring layer;

a dielectric film having a low dielectric constant formed on said first oxide film;

a first layer containing nitrogen formed in said first oxide film;

a second wiring layer, wherein said dielectric film is disposed between said second wiring layer and said first wiring layer;

a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer; and

a second layer containing nitrogen formed in a side wall of said via hole,

wherein said first layer is formed by doping said first oxide film with NH₃ plasma,

wherein said second layer is formed by doping said side wall of said via hole with NH₃ plasma,

wherein a first nitrogen density of said nitrogen from a surface of said first layer to a first depth of 10 nm is greater than or equal to 1×

10²¹/cm³, and

wherein a second nitrogen density of said nitrogen from a surface of said second layer to a second depth of 10 nm is greater than or equal to 1×

10²¹/cm³.

14. A semiconductor device, comprising:

a substrate;

a first wiring layer formed at least indirectly on said substrate;

a first oxide film formed on said first wiring layer;

a dielectric film having a low dielectric constant formed on said first oxide film;

a first layer containing nitrogen formed in said first oxide film;

a second wiring layer, wherein said dielectric film is disposed between said second wiring layer and said first wiring layer;

a via hole formed through said dielectric film and disposed between said first wiring layer and said second wiring layer for electrically connecting said first wiring layer and said second wiring layer; and

a second layer containing nitrogen formed in a side wall of said via hole,

wherein said first layer is formed by doping said first oxide film with NH₃ plasma,

wherein said second layer is formed by doping said side wall of said via hole with NH₃ plasma,

wherein a first nitrogen density of said nitrogen from a surface of said first layer to a first depth of 20 nm is greater than or equal to 1×

10²¹/cm³, and

wherein a second nitrogen density of said nitrogen from a surface of said second layer to a second depth of 20 nm is greater than or equal to 1×

10²¹/cm³.