High-frequency switch

• US 6,633,206 B1
• Filed: 01/27/2000
• Issued: 10/14/2003
• Est. Priority Date: 01/27/1999
• Status: Expired due to Term

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: Kato, Mitsuhide
• Primary Examiner(s): Pascal, Robert
• Assistant Examiner(s): TAKAOKA, DEAN O
• Application Number:
  US09/492,927
• Time in Patent Office: 1,356 Days
• Field of Search: 333/103, 333/104, 333/101, 455/80, 455/83
• US Class Current: 333/104
• CPC Class Codes: H04B 1/48 in circuits for connecting transmitter and receiver to a common transmission path, e.g. by energy of transmitter H04B1/46 takes precedence

Abstract

A high-frequency switch includes a transmission terminal, an antenna terminal, a reception terminal, and a voltage-control terminal; a first diode, the cathode thereof being electrically connected to the transmission terminal, and the anode being electrically connected to the antenna terminal; a first transmission line, electrically connected between the antenna terminal and the reception terminal; a second diode, the cathode thereof being electrically connected to the reception terminal, and the anode being electrically connected to the voltage-control terminal; a second transmission line, one end thereof being electrically connected to the transmission terminal, and the other end being connected to ground; and a capacitor, electrically connected between the voltage-control terminal and ground. The above high-frequency switch can be miniaturized and has superior performance.

Claims

1. A high-frequency switch comprising:

a transmission terminal, an antenna terminal, a reception terminal, and a voltage-control terminal;

a first diode, the cathode thereof being electrically connected to said transmission terminal, and the anode being electrically connected to said antenna terminal;

a first transmission line, electrically connected between said antenna terminal and said reception terminal;

a second diode, the cathode thereof being electrically connected to said reception terminal, and the anode being electrically connected to said voltage-control terminal via a resistor;

a second transmission line, one end thereof being electrically connected to said transmission terminal, and the other end being electrically connected to ground so as to so as to permit conduction of DC to ground; and

a capacitor, electrically connected between said voltage-control terminal and ground;

wherein

said high-frequency switch has an ON state in which a positive potential is applied to said voltage-control terminal to forward-bias the first and second diodes and permit a transmission signal having a transmission frequency to pass from the transmission terminal to the antenna terminal; and

in said ON state, a self-inductance of the second diode resonates in series with said capacitor to provide a low impedance between said reception terminal and ground;

wherein said transmission terminal, said reception terminal, said antenna terminal, said voltage-control terminal and at least one ground terminal are provided on an outside surface of a multilayered body; and

wherein at least one of said transmission, reception and antenna terminals generates a bypass capacitance with said at least one ground terminal.

2. The high-frequency switch according to claim 1, wherein

said multilayered body comprises a plurality of laminated dielectric layers, having electrodes thereon, said electrodes constituting said first and second transmission lines, a capacitor electrode of said capacitor and a ground electrode; and

said first and second diodes are mounted on said outside surface of said multilayered body and connected to said electrodes.

3. The high-frequency switch according to claim 1, wherein

said multilayered body comprises a plurality of laminated dielectric layers having electrodes thereon, said electrodes constituting said first and second transmission lines;

and

said first and second diodes are mounted on said outside surface of said multilayered body and connected to said electrodes.

4. The high-frequency switch according to claim 1, wherein said first transmission line is electrically connected to the anode of said first diode so as to permit conduction of DC therebetween.

5. The high-frequency switch according to claim 1, wherein a plurality of ground terminals are disposed on said multilayered body and generate a respective plurality of bypass capacitances with corresponding ones of said transmission, reception and antenna terminals.

6. The high-frequency switch according to claim 5, wherein said multilayered body has top and bottom major surfaces and a side surface extending therebetween, and wherein said terminals generating said bypass capacitances are disposed at least on said bottom surface.

7. The high-frequency switch according to claim 5, wherein said multilayered body has top and bottom major surfaces and a side surface extending therebetween, and wherein said terminals generating said bypass capacitances are disposed at least on said side surface.

8. The high-frequency switch according to claim 1, wherein said multilayered body has top and bottom major surfaces and a side surface extending therebetween, and wherein said terminals generating said bypass capacitances are disposed at least on said bottom surface.

9. The high-frequency switch according to claim 8, wherein said multilayered body has top and bottom major surfaces and a side surface extending therebetween, wherein said terminals generating said bypass capacitances are disposed at least on said side surface.

10. A high-frequency switch comprising:

a transmission terminal, an antenna terminal, a reception terminal, and a voltage-control terminal;

a first diode, the cathode thereof being electrically connected to said transmission terminal, and the anode being electrically connected to said antenna terminal;

a first transmission line, electrically connected between said antenna terminal and said reception terminal;

a second diode, the cathode thereof being electrically connected to said reception terminal, and the anode being electrically connected to said voltage-control terminal;

a second transmission line, one end thereof being electrically connected to said transmission terminal, and the other end being electrically connected to ground so as to so as to permit conduction of DC to ground; and

a capacitor, electrically connected between said voltage-control terminal and ground;

wherein

said high-frequency switch has an ON state in which a positive potential is applied to said voltage-control terminal to forward-bias the first and second diodes and permit a transmission signal having a transmission frequency to pass from the transmission terminal to the antenna terminal; and

in said ON state, a self-inductance of the second diode resonates in series with said capacitor to provide a low impedance between said reception terminal and ground;

wherein said transmission terminal, said reception terminal, said antenna terminal, said voltage-control terminal and at least one ground terminal are provided on an outside surface of a multilayered body; and

wherein at least one of said transmission, reception and antenna terminals generates a bypass capacitance with said at least one ground terminal.

11. The high-frequency switch according to claim 10, wherein

said multilayered body comprises a plurality of laminated dielectric layers, having electrodes thereon, said electrodes constituting said first and second transmission lines, a capacitor electrode of said capacitor and a ground electrode; and

said first and second diodes are mounted on said outside surface of said multilayered body and connected to said electrodes.

12. The high-frequency switch according to claim 10, wherein

said multilayered body comprises a plurality of laminated dielectric layers having electrodes thereon, said electrodes constituting said first and second transmission lines;

and

said first and second diodes are mounted on said outside surface of said multilayered body and connected to said electrodes.

13. The high-frequency switch according to claim 10, wherein said first transmission line is electrically connected to the anode of said first diode so as to permit conduction of DC therebetween.

14. The high-frequency switch according to claim 10, wherein a plurality of ground terminals are disposed on said multilayered body and generate a respective plurality of bypass capacitances with corresponding ones of said transmission, reception and antenna terminals.

15. The high-frequency switch according to claim 14, wherein said multilayered body has top and bottom major surfaces and a side surface extending therebetween, and wherein said terminals generating said bypass capacitances are disposed at least on said bottom surface.

16. The high-frequency switch according to claim 14, wherein said multilayered body has top and bottom major surfaces and a side surface extending therebetween, and wherein said terminals generating said bypass capacitances are disposed at least on said side surface.

17. The high-frequency switch according to claim 10, wherein said multilayered body has top and bottom major surfaces and a side surface extending therebetween, and wherein said terminals generating said bypass capacitances are disposed at least on said bottom surface.

18. The high-frequency switch according to claim 17, wherein said multilayered body has top and bottom major surfaces and a side surface extending therebetween, wherein said terminals generating said bypass capacitances are disposed at least on said side surface.