Method of forming photonic crystals using a semiconductor-based fabrication process

• US 6,633,427 B1
• Filed: 08/14/2001
• Issued: 10/14/2003
• Est. Priority Date: 08/14/2001
• Status: Expired due to Term

• Current Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: National Semiconductor Corporation (Texas Instruments, Inc.)
• Inventors: Koscielniak, Waclaw C.
• Primary Examiner(s): Dang, Hung Xuan
• Assistant Examiner(s): TRA, TUYEN Q
• Application Number:
  US09/929,661
• Time in Patent Office: 791 Days
• Field of Search: 359/321, 359/248, 359/245, 359/250, 359/332, 359/237, 359/238, 359/585, 359/586, 359/587, 359/588, 359/344, 343/786, 343/772, 343/911.R, 438/694, 438/697, 438/690, 372/43, 372/45, 257/21
• US Class Current: 359/321
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices

Abstract

A photonic crystal is formed on a semiconductor substrate using a semiconductor-based fabrication process by forming a number of alternating layers of material that have different dielectric constants. The layers of material are then etched to form a number of spaced-apart stacks of alternating layers of material. An interstack material is then formed between the stacks.

Claims

1. A method of forming a photonic crystal on a semiconductor substrate, the substrate having a receiving region, the method comprising the steps of:

forming a first layer of material over the substrate, the first layer of material having a first dielectric constant;

forming a second layer of material on the first layer of material, the second layer of material having a second dielectric constant;

repeating the forming the first layer step and the forming the second layer step a predetermined number of times to form a multi-layered structure with alternating layers, the multi-layered structure having a top layer and a plurality of underlying layers, the top layer having a top surface;

etching the top layer and the underlying layers to form a plurality of photonic stacks and a space between the photonic stacks, the plurality of photonic stacks having a plurality of top surfaces; and

forming a layer of interstack material over the substrate to fill up the space between the photonic stacks.

2. The method of claim 1 wherein the first layer of material is a dielectric.

3. The method of claim 1 wherein the layer of interstack material has a top surface that is substantially coplanar with the top surfaces of the stacks.

4. The method of claim 1 wherein the top surface of the layer of interstack material is above the top surfaces of the stacks.

5. The method of claim 1 wherein the top surface of the layer of interstack material is below the top surfaces of the stacks.

6. The method of claim 1 wherein the layer of interstack material is a dielectric having a dielectric constant that is equal to the dielectric constant of the layer of first material.

7. The method of claim 1 wherein the layer of interstack material is a dielectric having a dielectric constant that is different from the dielectric constant of the layer of first material.

8. The method of claim 1 and further comprising the step of planarizing the layer of interstack material, the layer of interstack material having a top surface.

9. The method of claim 8 wherein the layer of interstack material has a top surface that is substantially coplanar with the top surfaces of the stacks.

10. The method of claim 8 wherein the top surface of the layer of interstack material is above the top surfaces of the stacks.

11. The method of claim 8 wherein the top surface of the layer of interstack material is below the top surfaces of the stacks.

12. The method of claim 8 wherein the layer of interstack material is a dielectric having a dielectric constant that is equal to the dielectric constant of the layer of first material.

13. The method of claim 8 wherein the layer of interstack material is a dielectric having a dielectric constant that is different from the dielectric constant of the layer of first material.