Methods and systems for determining a critical dimension and a thin film characteristic of a specimen

• US 6,633,831 B2
• Filed: 09/20/2001
• Issued: 10/14/2003
• Est. Priority Date: 09/20/2000
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation
• Original Assignee: KLA-Tencor Corporation
• Inventors: Brown, Kyle A., Levy, Ady, Wack, Dan, Fielden, John, Bultman, Gary, Nikoonahad, Mehrdad
• Primary Examiner(s): Barlow, John
• Assistant Examiner(s): Washburn, Douglas N
• Application Number:
  US09/956,852
• Publication Number:
  US 20020107660A1
• Time in Patent Office: 754 Days
• Field of Search: 731/05, 250/306, 250/310, 250/492.2, 324/765, 356/237.2, 356/369, 356/381, 356/388, 356/432, 356/503, 356/300
• US Class Current: 702/155
• CPC Class Codes: G01N 2021/646 Detecting fluorescent inhomogeneities at a position, e.g. for detecting defects
• CPC Class Codes: G01N 2021/8825 Separate detection of dark field and bright field
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: G01N 21/47 Scattering, i.e. diffuse reflection G01N21/25, G01N21/41 take precedence G01N21/55 takes precedence
• CPC Class Codes: G01N 21/55 Specular reflectivity
• CPC Class Codes: G01N 21/636 using an arrangement of pump beam and probe beam; using the measurement of optical non-linear properties; non-linear optics per se G02F1/35
• CPC Class Codes: G01N 21/64 Fluorescence; Phosphorescence
• CPC Class Codes: G01N 21/94 Investigating contamination, e.g. dust G01N21/85 takes precedence
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 21/9503 Wafer edge inspection
• CPC Class Codes: G01N 21/956 Inspecting patterns on the surface of objects contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 7/7065 Defects, e.g. optical inspection of patterned layer for defects
• CPC Class Codes: G03F 7/70658 Electrical testing
• CPC Class Codes: G03F 7/707 Chucks, e.g. chucking or un-chucking operations or structural details
• CPC Class Codes: G03F 7/70708 being electrostatic; Electrostatically deformable vacuum chucks
• CPC Class Codes: H01J 2237/31701 Ion implantation
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 117/1004 : with means for measuring, testing, or sensing

Abstract

Methods and systems for monitoring semiconductor fabrication processes are provided. A system may include a stage configured to support a specimen and coupled to a measurement device. The measurement device may include an illumination system and a detection system. The illumination system and the detection system may be configured such that the system may be configured to determine multiple properties of the specimen. For example, the system may be configured to determine multiple properties of a specimen including, but not limited to, critical dimension and a thin film characteristic. In this manner, a measurement device may perform multiple optical and/or non-optical metrology and/or inspection techniques.

Claims

1. A system configured to determine at least two properties of a specimen during use, comprising:

a stage configured to support the specimen during use;

a measurement device coupled to the stage, comprising;

an illumination system configured to direct energy toward a surface of the specimen during use; and

a detection system coupled to the illumination system and configured to detect energy propagating from the surface of the specimen during use, wherein the measurement device is configured to generate one or more output signals in response to the detected energy during use; and

a processor coupled to the measurement device and configured to determine a first property and a second property of the specimen from the one or more output signals during use, wherein the first property comprises a critical dimension of the specimen, and wherein the second property comprises a thin film characteristic of the specimen.

2. The system of claim 1, wherein the stage is further configured to move laterally during use.

3. The system of claim 1, wherein the stage is further configured to move rotatably during use.

4. The system of claim 1, wherein the stage is further configured to move laterally and rotatably during use.

5. The system of claim 1, wherein the illumination system comprises a single energy source.

6. The system of claim 1, wherein the illumination system comprises more than one energy source.

7. The system of claim 1, wherein the detection system comprises a single energy sensitive device.

8. The system of claim 1, wherein the detection system comprises more than one energy sensitive devices.

9. The system of claim 1, wherein the measurement device further comprises a non-imaging scatterometer.

10. The system of claim 1, wherein the measurement device further comprises a scatterometer.

11. The system of claim 1, wherein the measurement device further comprises a spectroscopic scatterometer.

12. The system of claim 1, wherein the measurement device further comprises a reflectometer.

13. The system of claim 1, wherein the measurement device further comprises a spectroscopic reflectometer.

14. The system of claim 1, wherein the measurement device further comprises a coherence probe microscope.

15. The system of claim 1, wherein the measurement device further comprises a bright field imaging device.

16. The system of claim 1, wherein the measurement device further comprises a dark field imaging device.

17. The system of claim 1, wherein the measurement device further comprises a bright field and dark field imaging device.

18. The system of claim 1, wherein the measurement device further comprises an ellipsometer.

19. The system of claim 1, wherein the measurement device further comprises a spectroscopic ellipsometer.

20. The system of claim 1, wherein the measurement device further comprises a dual beam spectrophotometer.

21. The system of claim 1, wherein the measurement device further comprises a beam profile ellipsometer.

22. The system of claim 1, wherein the measurement device further comprises at least a first measurement device and a second measurement device, and wherein the first and second measurement devices are selected from the group consisting of a non-imaging scatterometer, a scatterometer, a spectroscopic scatterometer, a reflectometer, a spectroscopic reflectometer, a coherence probe microscope, a bright field imaging device, a dark field imaging device, a bright field and dark field imaging device, an ellipsometer, a spectroscopic ellipsometer, a dual beam spectrophotometer, a beam profile ellipsometer, a photo-acoustic device, and a grating X-ray reflectometer.

23. The system of claim 1, wherein the measurement device further comprises at least a first measurement device and a second measurement device, and wherein optical elements of the first measurement device comprise optical elements of the second measurement device.

24. The system of claim 1, wherein the illumination system and the detection system comprise non-optical components, and wherein the detected energy is responsive to a non-optical characteristic of the surface of the specimen.

25. The system of claim 1, wherein the measurement device further comprises at least an eddy current device and a spectroscopic ellipsometer.

26. The system of claim 1, wherein the measurement device further comprises at least an eddy current device and a spectroscopic ellipsometer, and wherein the system is coupled to an atomic layer deposition tool.

27. The system of claim 1, wherein the processor is further configured to determine a third property of the specimen from the one or more output signals during use, and wherein the third property is selected from the group consisting of a roughness of the specimen, a roughness of a layer on the specimen, and a roughness of a feature of the specimen.

28. The system of claim 27, wherein the system is coupled to a process tool selected from the group consisting of a lithography tool, an atomic layer deposition tool, a cleaning tool, and an etch tool.

29. The system of claim 1, wherein the system is further configured to determine at least the two properties of the specimen substantially simultaneously during use.

30. The system of claim 1, wherein the illumination system is further configured to direct energy to multiple locations on the surface of the specimen substantially simultaneously, and wherein the detection system is further configured to detect energy propagating from the multiple locations on the surface of the specimen substantially simultaneously such that one or more of the at least two properties of the specimen can be determined at the multiple locations substantially simultaneously.

31. The system of claim 1, wherein the system is coupled to a process tool.

32. The system of claim 1, wherein the system is coupled to a process tool, and wherein the system is disposed within the process tool.

33. The system of claim 1, wherein the system is coupled to a process tool, and wherein the system is arranged laterally proximate to the process tool.

34. The system of claim 1, wherein the system is coupled to a process tool, and wherein the process tool comprises a wafer handler configured to move the specimen to the stage during use.

35. The system of claim 1, wherein the system is coupled to a process tool, and wherein the stage is configured to move the specimen from the system to the process tool during use.

36. The system of claim 1, wherein the system is coupled to a process tool, and wherein the system is further configured to determine at least the two properties of the specimen while the specimen is waiting between process steps.

37. The system of claim 1, wherein the system is coupled to a process tool, wherein the process tool comprises a support device configured to support the specimen during a process step, and wherein an upper surface of the support device is substantially parallel to an upper surface of the stage.

38. The system of claim 1, wherein the system is coupled to a process tool, wherein the process tool comprises a support device configured to support the specimen during a process step, and wherein an upper surface of the stage is angled with respect to an upper surface of the support device.

39. The system of claim 1, wherein the system is coupled to a process tool, and wherein the process tool is selected from the group consisting of a lithography tool, an etch tool, and a deposition tool.

40. The system of claim 1, wherein the system comprises a measurement chamber, wherein the stage and the measurement device are disposed within the measurement chamber, and wherein the measurement chamber is coupled to a process tool.

41. The system of claim 1, wherein the system comprises a measurement chamber, wherein the stage and the measurement device are disposed within the measurement chamber, and wherein the measurement chamber is disposed within a process tool.

42. The system of claim 1, wherein the system comprises a measurement chamber, wherein the stage and the measurement device are disposed within the measurement chamber, and wherein the measurement chamber is arranged laterally proximate to a process chamber of a process tool.

43. The system of claim 1, wherein the system comprises a measurement chamber, wherein the stage and the measurement device are disposed within the measurement chamber, and wherein the measurement chamber is arranged vertically proximate to a process chamber of is process tool.

44. The system of claim 1, wherein a process tool comprises a process chamber, wherein the stage is disposed within the process chamber, and wherein the stage is further configured to support the specimen during a process step.

45. The system of claim 44, wherein the processor is further configured to determine at least the two properties of the specimen during the process step.

46. The system of claim 45, wherein the processor is further configured to obtain a signature characterizing the process step during use, and wherein the signature comprises at least one singularity representative of an end of the process step.

47. The system of claim 45, wherein the processor is coupled to the process tool and is further configured to alter a parameter of one or more instruments coupled to the process tool in response to the determined properties using an in situ control technique during use.

48. The system of claim 1, wherein a process tool comprises a first process chamber and a second process chamber, and wherein the stage is further configured to move the specimen from the first process chamber to the second process chamber during use.

49. The system of claim 48, wherein the system is further configured to determine at least the two properties of the specimen as the stage is moving the specimen from the first process chamber to the second process chamber.

50. The system of claim 1, wherein the processor is further configured to compare at least one of the determined properties of the specimen and properties of a plurality of specimens during use.

51. The system of claim 1, wherein the processor is further configured to compare at least one of the determined properties of the specimen to a predetermined range for the property during use.

52. The system of claim 51, wherein the processor is further configured to generate an output signal if at least one of the determined properties of the specimen is outside of the predetermined range for the property during use.

53. The system of claim 1, wherein the processor is further configured to alter a sampling frequency of the measurement device in response to the determined first or second property of the specimen during use.

54. The system of claim 1, wherein the processor is further configured to alter a parameter of one or more instruments coupled to the measurement device in response to the determined first or second property using a feedback control technique during use.

55. The system of claim 1, wherein the processor is further configured to alter a parameter of one or more instruments coupled to the measurement device in response to the determined first or second property using a feedforward control technique during use.

56. The system of claim 1, wherein the processor is further configured to generate a database during use, wherein the database comprises the determined first and second properties of the specimen.

57. The system of claim 56, wherein the processor is further configured to calibrate the measurement device using the database during use.

58. The system of claim 57, wherein the processor is further configured to monitor output signals generated by measurement device using the database during use.

59. The system of claim 57, wherein the database further comprises first and second properties of a plurality of specimens.

60. The system of claim 59, wherein the first and second properties of the plurality of specimens are determined using the measurement device.

61. The system of claim 59, wherein the first and second properties of the plurality of specimens are determined using a plurality of measurement devices.

62. The system of claim 61, wherein the processor is further coupled to the plurality of measurement devices.

63. The system of claim 62, wherein the processor is further configured to calibrate the plurality of measurement devices using the database during use.

64. The system of claim 62, wherein the processor is further configured to monitor output signals generated by the plurality of measurement devices using the database during use.

65. The system of claim 1, further comprising a stand alone system coupled to the system, wherein the stand alone system is configured to be calibrated with a calibration standard during use, and wherein the stand alone system is further configured to calibrate the system during use.

66. The system of claim 1, further comprising a stand alone system coupled the system and at least one additional system, wherein the stand alone system is configured to be calibrated with a calibration standard during use, and wherein the stand alone system is further configured to calibrate the system and at least the one additional system during use.

67. The system of claim 1, wherein the system is further configured to determine at least the two properties of the specimen at more than one position on the specimen, wherein the specimen comprises a wafer, and wherein the processor is configured to alter at least one parameter of one or more instruments coupled to a process tool in response to at least one of the determined properties of the specimen at the more than one position on the specimen to reduce within wafer variation of at least one of the determined properties.

68. The system of claim 1, wherein the processor is further coupled to a process tool.

69. The system of claim 68, wherein the processor is further configured to alter a parameter of one or more instruments coupled to the process tool in response to the determined first or second property using a feedback control technique during use.

70. The system of claim 68, wherein the processor is further configured to alter a parameter of one or more instruments coupled to the process tool in response to the determined first or second property using a feedforward control technique during use.

71. The system of claim 68, wherein the processor is further configured to monitor a parameter of one or more instruments coupled to the process tool during use.

72. The system of claim 71, wherein the processor is further configured to determine a relationship between the determined properties and the monitored parameters during use.

73. The system of claim 72, wherein the processor is further configured to alter a parameter of one or more instruments coupled to the process tool in response to the relationship during use.

74. The system of claim 1, wherein the processor is further coupled to a plurality of measurement devices, and wherein each of the plurality of measurement devices is coupled to at least one of a plurality of process tools.

75. The system of claim 1, wherein the processor comprises a local processor coupled to the measurement device and a remote controller computer coupled to the local processor, wherein the local processor is configured to at least partially process the one or more output signals during use, and wherein the remote controller computer is configured to further process the at least partially processed one or more output signals during use.

76. The system of claim 75, wherein the local processor is further configured to determine the first property and the second property of the specimen during use.

77. The system of claim 75, wherein the remote controller computer is further configured to determine the first property and the second property of the specimen during use.

78. A method for determining at least two properties of a specimen, comprising:

disposing the specimen upon a stage, wherein the stage is coupled to a measurement device, and wherein the measurement device comprises an illumination system and a detection system;

directing energy toward a surface of the specimen using the illumination system;

detecting energy propagating from the surface of the specimen using the detection system;

generating one or more output signals in response to the detected energy; and

processing the one or more output signals to determine a first property and a second property of the specimen, wherein the first property comprises a critical dimension of the specimen, and wherein the second property comprises a thin film characteristic of the specimen.

79. A computer-implemented method for controlling a system configured to determine at least two properties of a specimen during use, wherein the system comprises a measurement device, comprising:

controlling the measurement device, wherein the measurement device comprises an illumination system and a detection system, and wherein the measurement device is coupled to a stage, comprising;

controlling the illumination system to direct energy toward a surface of the specimen;

controlling the detection system to detect energy propagating from the surface of the specimen; and

generating one or more output signals responsive to the detected energy; and

processing the one or more output signals to determine a first property and a second property of the specimen, wherein the first property comprises a critical dimension of the specimen, and wherein the second property comprises a thin film characteristic of the specimen.

80. A method for fabricating a semiconductor device, comprising:

forming a portion of the semiconductor device upon a specimen;

disposing the specimen upon a stage, wherein the stage is coupled to a measurement device, and wherein the measurement device comprises an illumination system and a detection system;

directing energy toward a surface of the specimen using the illumination system;

detecting energy propagating from the surface of the specimen using the detection system;

generating one or more output signals in response to the detected energy; and

processing the one or more output signals to determine a first property and a second property of the specimen, wherein the first property comprises a critical dimension of the specimen, and wherein the second property comprises a thin film characteristic of the specimen.

81. A system configured to determine at least two properties of a specimen during use, comprising:

a stage configured to support the specimen during use;

a measurement device coupled to the stage, comprising;

an illumination system configured to direct energy toward a surface of the specimen during use; and

a detection system coupled to the illumination system and configured to detect energy propagating from the surface of the specimen during use, wherein the measurement device is configured to generate one or more output signals responsive to the detected energy;

a local processor coupled to the measurement device and configured to at least partially process the one or more output signals during use; and

a remote controller computer coupled to the local processor, wherein the remote controller computer is configured to receive the at least partially processed one or more output signals and to determine a first property and a second property of the specimen from the at least partially processed one or more output signals during use, wherein the first property comprises a critical dimension of the specimen, and wherein the second property comprises a thin film characteristic of the specimen.

82. A method for determining at least two properties of a specimen, comprising:

disposing the specimen upon a stage, wherein the stage is coupled to a measurement device, and wherein the measurement device comprises an illumination system and a detection system;

directing energy toward a surface of the specimen using the illumination system;

detecting energy propagating from the surface of the specimen using the detection system;

generating one or more output signals responsive to the detected energy; and

processing the one or more output signals to determine a first property and a second property of the specimen, wherein the first property comprises a critical dimension of the specimen, and wherein the second property comprises a thin film characteristic of the specimen, comprising;

at least partially processing the one or more output signals using a local processor, wherein the local processor is coupled to the measurement device;

sending the partially processed one or more output signals from the local processor to a remote controller computer; and

further processing the partially processed one or more output signals using the remote controller computer.