Method for preparing an optical thin film

• US 6,635,155 B2
• Filed: 10/19/2001
• Issued: 10/21/2003
• Est. Priority Date: 10/20/2000
• Status: Expired due to Fees

• Current Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Original Assignee: Asahi Glass Company, Limited (AGC, Inc.)
• Inventors: Miyamura, Masao, Mitarai, Kazuhiko, Takaki, Satoru
• Primary Examiner(s): VerSteeg, Steven H.
• Application Number:
  US09/982,257
• Publication Number:
  US 20020108848A1
• Time in Patent Office: 732 Days
• Field of Search: 204/192.12, 204/192.26, 204/192.27, 204/192.28, 204/192.13
• US Class Current: 204/192.13
• CPC Class Codes: C23C 14/0052 Bombardment of substrates by reactive ion beams
• CPC Class Codes: C23C 14/083 of refractory metals or yttrium
• CPC Class Codes: C23C 14/10 Glass or silica

Abstract

A method for forming an optical thin film having multiple optical layers on the surface of a substrate using a magnetron sputtering apparatus with a sputtering chamber having cathodes, the substrate, and at least two kinds of targets disposed therein. An inert gas and a reactive gas are introduced into the sputtering chamber to form at least some of the multiple optical layers on the substrate by successively alternately repeatedly forming at least two kinds of optical layers each having a different optical constant by means of the reactive magnetron sputtering apparatus under a condition of a discharge pressure being no greater than 1.3×10⁻¹ Pa.

Claims

1. A method for preparing an optical thin film having multiple optical layers on a substrate using a magnetron sputtering apparatus having cathodes and at least two kinds of targets disposed in a sputtering chamber of the magnetron sputtering apparatus along with the substrate, said method comprising the steps of:

introducing an inert gas and a reactive gas into the sputtering chamber; and

forming at least some of the multiple optical layers on the substrate by successively alternately repeatedly forming at least two kinds of optical layers each having a different optical constant by means of the reactive magnetron sputtering apparatus under a condition of providing a discharge pressure no greater than 1.3×

10<sup>−

1</sup> Pa.

2. The method for preparing an optical thin film according to claim 1, further comprising the step of evacuating the sputtering chamber to a pressure no greater than 1.0×

10<sup>−

4</sup> Pa prior to introducing the inert gas and reactive gas into the sputtering chamber.

3. The method for preparing an optical thin film according to claim 2, wherein said at least two kinds of optical layers are made of dielectric materials.

4. The method for preparing an optical thin film according to claim 3, wherein the optical thin film is a multi-layered thin film optical interference filter having selectivity for a transmission wavelength or a reflection wavelength.

5. The method for preparing an optical thin film according to claim 2, wherein said at least two kinds of targets are each mounted on respective cathodes that are each disposed at substantially the same distance from the substrate, and said at least two kinds of optical layers are formed by switching between the at least two kinds of targets for sputtering each of said at least two kinds of optical layers.

6. The method for preparing an optical thin film according to claim 5, further comprising introducing the reactive gas very near to the substrate while adjusting gas flow rate.

7. The method for preparing an optical thin film according to claim 2, further comprising evacuating gas in the sputtering chamber from an exhaust port located near a main surface of the substrate that is farthest from the at least two kinds of targets, so that partial pressure of the reactive gas being introduced from a gas inlet very near the substrate is minimized in the vicinity of the at least two kinds of targets so as to minimize a decrease in the film-forming rate of the multiple optical layers.

8. The method for preparing an optical thin film according to claim 1, wherein said at least two kinds of optical layers are made of dielectric materials.

9. The method for preparing an optical thin film according to claim 8, wherein the optical thin film is a multi-layered thin film optical interference filter having selectivity for a transmission wavelength or a reflection wavelength.

10. The method for preparing an optical thin film according to claim 1, wherein said at least two kinds of targets are each mounted on respective cathodes that are each disposed at substantially the same distance from the substrate, and said at least two kinds of optical layers are formed by switching between the at least two kinds of targets for sputtering each of said at least two kinds of optical layers.

11. The method for preparing an optical thin film according to claim 10, further comprising introducing the reactive gas very near to the substrate while adjusting gas flow rate.

12. The method for preparing an optical thin film according to claim 1 further comprising evacuating gas in the sputtering chamber from an exhaust port located near a main surface of the substrate that is farthest from the at least two kinds of targets, so that partial pressure of the reactive gas being introduced from a gas inlet very near the substrate is minimized in the vicinity of the at least two kinds of targets, so as to minimize a decrease in the film-forming rate of the multiple optical layers.

13. The method for preparing an optical thin film according to claim 1, said method further comprising sputtering at least two of the at least two kinds of targets simultaneously to obtain at least one optical layer of said multiple optical layers.

14. The method for preparing an optical thin film according to claim 13, wherein the at least two kinds of targets which are sputtered simultaneously are each made of a same material and the reactive gas is of a same species.

15. The method for preparing an optical thin film according to claim 13, wherein the at least two kinds of targets which are sputtered simultaneously are made of different materials.

16. The method for preparing an optical thin film according to claim 1, further comprising irradiating an ion beam onto the multiple optical layers as they are being formed.

17. The method for preparing an optical thin film according to claim 1, further comprising applying RF electric power to the substrate during the forming of the multiple optical layers.

18. The method for preparing an optical thin film according to claim 1, further comprising suppressing abnormal discharge occurring in the sputtering chamber when the multiple optical layers are being formed by using an electron gun for electrical neutralization.

19. The method for preparing an optical thin film according to claim 1, further comprising providing at least one optical monitor performing a monitoring operation by irradiating monitoring light from a light source disposed inside or outside of the sputtering chamber on or through the surface of the multiple optical layers being formed on the substrate and detecting an intensity of the monitoring light reflected from the surface of the multiple optical layers being formed or the intensity of the monitoring light transmitted through the multiple optical layers being formed with a detector that provides a monitoring condition signal indicating a desired layer thickness has been obtained.

20. The method for preparing an optical thin film according to claim 19, further comprising:

providing N optical monitors associated with N shutters to monitor N regions associated with the multiple optical layers being formed on the substrate in N sequential region monitoring operations, with N≧

2; and

sequentially controlling each particular shutter of the N shutters to be open to expose a corresponding particular region of the N regions to monitoring by an associated one of the N optical monitors while all others of the N shutters remain closed during each of the N sequential region monitoring operations.

21. The method for preparing an optical thin film according to claim 20, further comprising slowing down the optical layer sputtering rate when the monitoring condition signal from a particular one of the N optical monitors indicates that the desired optical layer sputtered thickness is close to being obtained in the particular regions of the N regions being monitored.

22. The method for preparing an optical thin film according to claim 19, further comprising slowing down the optical layer sputtering rate when the monitoring condition signal from the at least one optical monitor indicates that the desired optical layer sputtered thickness is close to being obtained.

23. The method for preparing an optical thin film according to claim 1, further comprising disposing or moving a magnet relative to each cathode in a manner providing an erosion region of each target to be an entire surface of that target.