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Methods of forming semiconductor constructions

  • US 6,635,552 B1
  • Filed: 06/12/2000
  • Issued: 10/21/2003
  • Est. Priority Date: 06/12/2000
  • Status: Expired due to Term
First Claim
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1. A method of forming a semiconductor construction, comprising:

  • forming a first substrate comprising silicon-containing structures separated from one another by an insulative material;

    the silicon-containing structures defining an upper surface;

    forming a second semiconductor substrate comprising a monocrystalline material having a damage region therein;

    bonding the second semiconductor substrate to the silicon-containing structures at the upper surface; and

    cleaving the monocrystalline material along the damage region.

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