Methods of forming semiconductor constructions
First Claim
1. A method of forming a semiconductor construction, comprising:
- forming a first substrate comprising silicon-containing structures separated from one another by an insulative material;
the silicon-containing structures defining an upper surface;
forming a second semiconductor substrate comprising a monocrystalline material having a damage region therein;
bonding the second semiconductor substrate to the silicon-containing structures at the upper surface; and
cleaving the monocrystalline material along the damage region.
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Abstract
The invention includes a method of forming a semiconductor construction. A first substrate is provided which comprises silicon-containing structures separated from one another by an insulative material. The silicon-containing structures define an upper surface. A second semiconductor substrate is provided which comprises a monocrystalline material having a damage region therein. The second semiconductor substrate is bonded to the silicon-containing structures of the first substrate at the upper surface. The monocrystalline material is then cleaved along the damage region. The invention also encompasses a semiconductor construction comprising a first substrate having silicon-containing structures separated from one another by an insulative material, and a second substrate comprising a monocrystalline material. The silicon-containing structures of the first substrate define an upper surface, and the monocrystalline material of the second substrate is bonded over the silicon-containing structures at the upper surface.
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Citations
16 Claims
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1. A method of forming a semiconductor construction, comprising:
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forming a first substrate comprising silicon-containing structures separated from one another by an insulative material;
the silicon-containing structures defining an upper surface;
forming a second semiconductor substrate comprising a monocrystalline material having a damage region therein;
bonding the second semiconductor substrate to the silicon-containing structures at the upper surface; and
cleaving the monocrystalline material along the damage region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming a semiconductor construction, comprising:
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forming a first semiconductor substrate comprising a first monocrystalline base and silicon-containing structures above the base, at least some of the silicon-containing structures being separated from one another by an insulative material;
the silicon-containing structures and insulative material together defining a planarized upper surface above the first monocrystalline base;
forming a second semiconductor substrate comprising a second monocrystalline base and having a damage region formed within the second monocrystalline base;
bonding the second semiconductor substrate to the silicon-containing structures at the planarized upper surface above the first monocrystalline base; and
cleaving the second monocrystalline base along the damage region. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16)
forming at least one doped silicon region extending through the second monocrystalline base and electrically contacting at least one of the silicon-containing structures; and
forming at least one other doped silicon region within the second monocrystalline base, but which does not extend entirely through the second monocrystalline base.
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Specification