Methods and apparatus to enhance properties of Si-O-C low K films
First Claim
1. A process for depositing an intermetal dielectric film over a plurality of conductive lines, the process comprising:
- treating the plurality of conductive lines with atomic hydrogen produced by dissociation of a hydrogen-containing gas in a remote source fluidly coupled to the processing chamber;
flowing a process gas comprising ozone and an organosilane precursor having at least one silicon-carbon bond into the substrate processing chamber;
heating the substrate to a temperature of between about 100-250°
C. to form a carbon-doped silicon oxide layer over the plurality of conductive lines; and
thereafter, curing the carbon-doped silicon oxide layer.
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Abstract
A method for providing a dielectric film having enhanced adhesion and stability. Pre-deposition, post deposition and post cure treatments enhance adhesion of the dielectric film to an underlying substrate and overlying cap layer. The enhanced film is particularly useful as an intermetal or premetal dielectric layer in an integrated circuit. A pre-deposition treatment process with atomic hydrogen enhances film adhesion by reducing weakly bound oxides on the surface of the substrate. A post-deposition densification process in a reducing atmosphere enhances stability if the film is to be cured ex-situ. In a preferred embodiment, the layer a low dielectric constant film deposited from a process gas of ozone and an organosilane precursor having at least one silicon-carbon (Si—C) bond.
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Citations
10 Claims
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1. A process for depositing an intermetal dielectric film over a plurality of conductive lines, the process comprising:
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treating the plurality of conductive lines with atomic hydrogen produced by dissociation of a hydrogen-containing gas in a remote source fluidly coupled to the processing chamber;
flowing a process gas comprising ozone and an organosilane precursor having at least one silicon-carbon bond into the substrate processing chamber;
heating the substrate to a temperature of between about 100-250°
C. to form a carbon-doped silicon oxide layer over the plurality of conductive lines; and
thereafter, curing the carbon-doped silicon oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification