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Method for reducing topography dependent charging effects in a plasma enhanced semiconductor wafer processing system

  • US 6,635,577 B1
  • Filed: 03/30/1999
  • Issued: 10/21/2003
  • Est. Priority Date: 03/30/1999
  • Status: Expired due to Fees
First Claim
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1. A method of processing a semiconductor wafer comprising the steps of:

  • providing a semiconductor wafer to a process chamber, wherein the semiconductor wafer has a topographic structure thereon;

    exposing the semiconductor wafer to a plasma in the process chamber;

    monitoring the plasma using spectroscopy to determine when a period is approaching that may cause charge damage to the semiconductor wafer; and

    illuminating the semiconductor wafer with light in response to a determination that the period is approaching that may cause charge damage to the semiconductor wafer to remove electrical charge therefrom.

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