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Encapsulation of polymer-based solid state devices with inorganic materials

  • US 6,635,989 B1
  • Filed: 08/03/1999
  • Issued: 10/21/2003
  • Est. Priority Date: 08/03/1998
  • Status: Expired due to Fees
First Claim
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1. In a light-emitting device comprising a layer of an active light-emitting polymer sandwiched between a cathode and an anode, the improvement comprising:

  • an encapsulating layer of low-temperature-applied inorganic material protecting the device against environmental attack, wherein the inorganic material comprises a nitride of boron (B), aluminum (Al), gallium (Ga), indium (In), thallium (Tl), carbon (C), silicon (Si), germanium (Ge), tin (Sn) or lead (Pb);

    a low-temperature-applied coating comprising a nonreactive metal, wherein the low-temperature-applied coating is located between the device and the layer of inorganic material such that the low-temperature applied coating is next to the layer of inorganic material; and

    a protective cover plate attached over the layer of inorganic material to form a cavity to enclose the layer of inorganic material that is located between the low-temperature-applied coating and the protective cover plate.

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