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Dual probe test structures for semiconductor integrated circuits

  • US 6,636,064 B1
  • Filed: 08/25/2000
  • Issued: 10/21/2003
  • Est. Priority Date: 12/14/1999
  • Status: Expired due to Term
First Claim
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1. A semiconductor test structure comprising:

  • a grounded portion;

    a voltage contrast test structure formed over the grounded portion, the voltage contrast test structure having a first portion coupled with the grounded portion and a second portion not coupled with the grounded portion; and

    a probe pad coupled to the voltage contrast test structure, wherein the first portion of the voltage contrast test structure is positioned adjacent to the second portion of the voltage contrast test structure, and wherein a first subportion of each of the first and second portion is located within a scanning area of a voltage contrast inspection and a second subportion of each of the first and second portion is located outside the scanning area so that a short between the second subportions of the first and second portions of the voltage contrast test structure is detectable during the voltage contrast inspection of the first subportions of the first and second portion.

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