High frequency power amplifier module and wireless communication apparatus

• US 6,636,114 B2
• Filed: 08/27/2001
• Issued: 10/21/2003
• Est. Priority Date: 09/11/2000
• Status: Expired due to Term

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Hitachi, Ltd.
• Inventors: Tsutsui, Takayuki, Adachi, Tetsuaki
• Primary Examiner(s): Tokar, Michael
• Assistant Examiner(s): NGUYEN, LINH V
• Application Number:
  US09/938,547
• Publication Number:
  US 20020030541A1
• Time in Patent Office: 785 Days
• Field of Search: 330/51, 330/129, 330/133, 330/134, 330/285, 330/289
• US Class Current: 330/51
• CPC Class Codes: H03F 1/22 by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
• CPC Class Codes: H03F 1/3211 in differential amplifiers
• CPC Class Codes: H03F 2200/294 the amplifier being a low noise amplifier [LNA]
• CPC Class Codes: H03F 2200/372 Noise reduction and elimination in amplifier
• CPC Class Codes: H03F 2203/45392 the AAC comprising resistors in the source circuit of the AAC before the common source coupling
• CPC Class Codes: H03F 2203/45544 the IC comprising one or more capacitors, e.g. coupling capacitors
• CPC Class Codes: H03F 2203/45702 the LC comprising two resistors
• CPC Class Codes: H03F 3/245 with semiconductor devices only
• CPC Class Codes: H03F 3/45089 Non-folded cascode stages

Abstract

A GSM system and an EDGE system much different in gain are incorporated into a single high frequency power amplifier module.

In a high frequency power amplifier module having a multi-stage amplifying configuration, which is used in a GSM mode and an EDGE mode according to switching, a first-stage amplifier comprises a dual gate MOSFET. In the EDGE mode, an APC signal or a selected and fixed potential is supplied to a first gate electrode of the dual gate MOSFET. Further, Vgs (Vgs1, Vgs2 and Vgs3) of respective transistors of from a first stage to a third stage are fixed in potential form or supplied as APC signals, and the gain in the EDGE mode is matched with that in the GSM mode, whereby the generation of noise is reduced.

Claims

1. A high frequency power amplifier module comprising:

an input terminal supplied with a signal to be amplified;

an output terminal;

a control terminal;

a mode switch terminal;

a plurality of amplifying stages cascade-connected between said input terminal and said output terminal,

each said amplifying stage comprising a first terminal which receives a signal inputted to said amplifying stage, a second terminal which transmits a signal outputted therefrom, a third terminal which receives a reference potential for said amplifying stage;

bias circuits which are respectively connected between said control terminal and the first terminals of said respective amplifying stages and respectively apply to the first terminals a dc bias potential based on a voltage supplied to said control terminal;

a plurality of temperature characteristic compensating circuits which respectively constitute current mirror circuits with respect to said respective amplifying stages; and

a mode switching circuit which is operated by a signal supplied to said mode switching terminal and turns on and off each said temperature characteristic compensating circuit to thereby perform switching between communication modes,

wherein at least one amplifying stage, excluding the amplifying stage corresponding to a final stage of said plurality of amplifying stages, and the corresponding temperature characteristic compensating comprise a respective load-side semiconductor amplifying element a respective and ground-side semiconductor amplifying element connected in series, control terminals of the respective load-side semiconductor amplifying elements thereof are connected to one another, and a control terminal of the said ground-side semiconductor amplifying element of the respective amplifying stage is connected between resistors forming a voltage, divider of the corresponding bias circuit,

an APC signal is applied to the control terminal of said load-side semiconductor amplifying element of said at least one amplifying stage in one communication mode so that the communication modes different from each other approximate each other in gain, and

predetermined fixed potentials are respectively applied to the first terminals of said amplifying stages as bias potentials.

2. The high frequency power amplifier module according to claim 1, which is switched to either a phase-modulation circuit configuration or a phase and amplitude-modulation circuit configuration according to the operation of said mode switching circuit.

3. The high frequency power amplifier module according to claim 1, which is switched to either a circuit configuration for a saturation amplifier or a circuit configuration for a linear amplifier according to the operation of said mode switching circuit.

4. The high frequency power amplifier module according to claim 1, which is switched to either a circuit configuration for GSM or a circuit configuration for EDGE according to the operation of said mode switching circuit.

5. The high frequency power amplifier module according to claim 1, wherein said plurality of amplifying stages, and said bias circuits and said temperature characteristic compensating circuits are provided in plural sets to thereby constitute a plurality of amplifying systems, and said respective amplifying stages of said plurality of amplifying systems are connected to said mode switching terminal to constitute a multi-mode and multi-band high frequency power amplifier device.

6. The high frequency power amplifier module according to claim 1, wherein the amplifying stages each corresponding to a first stage, of said plurality of amplifying systems are provided in a shared configuration.

7. The high frequency power amplifier module according to claim 1, wherein said load-side semiconductor amplifying element and said ground-side semiconductor amplifying element connected in series are dual gate type semiconductor amplifying elements.

8. A wireless communication apparatus having a high frequency power amplifier module according to claim 1.

9. The wireless communication apparatus according to claim 8, wherein said high frequency power amplifier module is used in a direct conversion method wherein a quatrature component signal and a synchronous component signal are inputted to an input terminal.

10. The wiring communication apparatus according to claim 8, wherein said high frequency power amplifier module is used in an offset PLL method wherein an amplitude-modulated signal is directly inputted to a first gate of a dual gate transistor of a first-stage amplifying stage and a phase signal is directly inputted to a second gate thereof.

11. A high frequency power amplifier module comprising:

an input terminal supplied with a signal to be amplified;

an output terminal;

a control terminal;

a mode switch terminal;

a plurality of amplifying stages cascade-connected between said input terminal and said output terminal,

each said amplifying stage comprising a first terminal which receives a signal inputted to said amplifying stage, a second terminal which transmits a signal outputted therefrom, and a third terminal which receives a reference potential for said amplifying stage;

bias circuits which are respectively connected between said control terminal and the first terminals of said respective amplifying stages and respectively apply to the first terminals a dc bias potential based on a voltage supplied to said control terminal;

a plurality of temperature characteristic compensating circuits which respectively constitute current mirror circuits with respect to said respective amplifying stages; and

a mode switching circuit which is operated by a signal supplied to said mode switching terminal and turns on and off each temperature characteristic compensating circuit to thereby perform switching between communication modes,

wherein at least one amplifying stage excluding the amplifying stage corresponding to a final stage of said plurality of amplifying stages, and the corresponding temperature characteristic compensating circuit each comprise a respective load-side semiconductor amplifying element and a respective ground-side semiconductor amplifying element connected in series, control terminals of the respective load-side semiconductor amplifying elements thereof are connected to one another, and a control terminal of the ground-side semiconductor amplifying is connected between resistors forming a voltage divider of the corresponding bias circuit,

an APC signal is applied to the control terminal of said load-side semiconductor amplifying element of said at least one amplifying stage in one communication mode so that the communication modes different from each other approximate each other in gain, and

APC signals are respectively applied to the first terminals of said amplifying stages as bias potentials.

12. The high frequency power amplifier module according to claim 11, which is switched to either a phase-modulation circuit configuration or a phase and amplitude-modulation circuit configuration according to the operation of said mode switching circuit.

13. The high frequency power amplifier module according to claim 11, which is switched to either a circuit configuration for a saturation amplifier or a circuit configuration for a linear amplifier according to the operation of said mode switching circuit.

14. The high frequency power amplifier module according to claim 11, which is switched to either a circuit configuration for GSM or a circuit configuration for EDGE according to the operation of said mode switching circuit.

15. The high frequency power amplifier module according to claim 11, wherein said plurality of amplifying stages, and said bias circuits and said temperature characteristic compensating circuits are provided in plural sets to thereby constitute a plurality of amplifying systems, and said respective amplifying stages of said plurality of amplifying systems are connected to said mode switching terminal to constitute a multi-mode and multi-band high frequency power amplifier device.

16. The high frequency power amplifier module according to claim 11, wherein the amplifying stages each corresponding to a first stage, of said plurality of amplifying systems are provided in a shared configuration.

17. The high frequency power amplifier module according to claim 11, wherein said load-side semiconductor amplifying element and said ground-side semiconductor amplifying element connected in series are dual gate type semiconductor amplifying elements.

18. A wireless communication apparatus having a high frequency power amplifier module according to claim 11.

19. A high frequency power amplifier module comprising:

an input terminal supplied with a signal to be amplified;

an output terminal;

a control terminal;

a mode switch terminal;

a plurality of amplifying stages cascade-connected between said input terminal and said output terminal,

each said amplifying stage comprising a first terminal which receives a signal inputted to said amplifying stage, a second terminal which transmits a signal outputted therefrom, and a third terminal which receives a reference potential for said amplifying stage;

bias circuits which are respectively connected between said control terminal and the first terminals of said respective amplifying stages and respectively apply to the first terminals a dc bias potential based on a voltage supplied to said control terminal;

a plurality of temperature characteristic compensating circuits which respectively constitute current mirror circuits with respect to said amplifying stages; and

a mode switching circuit which is operated by a signal supplied to said mode switching terminal and turns on and off each said temperature characteristic compensating circuit to thereby perform switching between communication modes,

wherein at least one amplifying stage, excluding the amplifying stage corresponding to a final stage of said plurality of amplifying stages, and the corresponding temperature characteristic compensating circuit each comprise a respective load-side semiconductor amplifying elements and ground-side semiconductor amplifying element connected in series, control terminals of the respective load-side semiconductor amplifying elements thereof are connected to one another, and a control terminal of the ground-side semiconductor amplifying element of the respective amplifying stage is connected between resistors forming a voltage divider of the corresponding bias circuits,

a selected and fixed potential is applied to the control terminal of said load-side semiconductor amplifying element of said at least one amplifying stage in one communication mode so that the communication modes different from each other approximate each other in gain, and

predetermined fixed potentials are respectively applied to the first terminals of said amplifying stages as bias potentials.

20. The high frequency power amplifier module according to claim 19, which is switched to either a phase-modulation circuit configuration or a phase and amplitude-modulation circuit configuration according to the operation of said mode switching circuit.

21. The high frequency power amplifier module according to claim 19, which is switched to either a circuit configuration for a saturation amplifier or a circuit configuration for a linear amplifier according to the operation of said mode switching circuit.

22. The high frequency power amplifier module according to claim 19, which is switched to either a circuit configuration for GSM or a circuit configuration for EDGE according to the operation of said mode switching circuit.

23. The high frequency power amplifier module according to claim 19, wherein said plurality of amplifying stages, and said bias circuits and said temperature characteristic compensating circuits are provided in plural sets to thereby constitute a plurality of amplifying systems, and said respective amplifying stages of said plurality of amplifying systems are connected to said mode switching terminal to constitute a multi-mode and multi-band high frequency power amplifier device.

24. The high frequency power amplifier module according to claim 19, wherein the amplifying stages each corresponding to a first stage, of said plurality of amplifying systems are provided in a shared configuration.

25. The high frequency power amplifier module according to claim 19, wherein said load-side semiconductor amplifying element and said ground-side semiconductor amplifying element connected in series are dual gate type semiconductor amplifying elements.

26. A wireless communication apparatus having a high frequency power amplifier module according to claim 19.

27. A high frequency power amplifier module for performing a linear amplifying operation or a non-linear amplifying operation according to a communication mode signal, comprising:

an input terminal supplied with a signal to be amplified;

an output terminal;

a mode switch terminal;

a plurality of amplifying stages cascade-connected between said input terminal and said output terminal and having first terminals for respectively receiving input signals supplied to said amplifying stages, and second terminals for respectively sending out signals outputted from said amplifying stages;

bias circuits which are respectively connected to the first terminals of said respective amplifying stages and apply bias potentials to the first terminals; and

a mode switching circuit which forms a mode signal according to a communication mode signal supplied to said mode switch terminal;

wherein at least one amplifying stage of said plurality of amplifying stages includes first and second semiconductor amplifying elements series-connected to one another between the second terminal of said amplifying stage and a predetermined voltage, the first terminal of said amplifying stage is connected to a control input node of the second semiconductor amplifying element, and the second terminal thereof is connected to an output node of the first semiconductor amplifying element,

the mode signal is supplied to the control input node of the first semiconductor amplifying element, and

when the linear amplifying operation and the non-linear amplifying operation are performed, gain is controlled by the mode signal.

28. The high frequency power amplifier module according to claim 27, which is operated as a saturation amplifier or a non-saturation amplifier according to the mode signal.

29. The high frequency power amplifier module according to claim 27, which is operated as a GSM amplifier or an EDGE amplifier according to the mode signal.

30. The high frequency power amplifier module according to claim 27, wherein the first and second semiconductor amplifying elements series-connected to each other are of a single dual gate type semiconductor amplifying element.

31. A wireless communication apparatus having a high frequency power amplifier module according to claim 27.

32. A high frequency power amplifier module comprising:

an input terminal supplied with a signal to be amplified;

an output terminal;

a mode terminal;

a plurality of amplifying stages cascade-connected between said input terminal and said output terminal and having first terminals for respectively receiving input signals supplied to said amplifying stages, and second terminals for respectively sending out signals outputted from said amplifying stages;

bias circuits which supply bias potentials to said respective amplifying stages respectively; and

a mode circuit which forms an AGC signal according to a signal supplied to said mode terminal;

wherein at least one of said amplifying stages has first and second semiconductor amplifying elements series-connected to one another between the second terminal of said amplifying stage and a predetermined voltage, and

a control terminal of the first semiconductor amplifying element is supplied with the AGC signal, an output terminal of the first semiconductor amplifying element is connected to the corresponding second terminal, and a control terminal of the second semiconductor amplifying element is connected to the corresponding first terminal.

33. The high frequency power amplifier module according to claim 32, wherein the first and second semiconductor amplifying elements series-connected to one another are a single dual gate type semiconductor amplifying element.

34. A wireless communication apparatus having a high frequency power amplifier module according to claim 32.

35. A high frequency power amplifier module comprising:

an input terminal supplied with a signal to be amplified;

an output terminal;

a mode terminal;

a plurality of amplifying stages cascade-connected between said input terminal and said output terminal and having first terminals for respectively receiving input signals supplied to said amplifying stages, and second terminals for respectively sending out signals outputted from said amplifying stages;

bias circuits which supply bias potentials to said respective amplifying stages respectively; and

a mode circuit which forms an APC signal according to a signal supplied to said mode terminal;

wherein at least one of said amplifying stages has first and second semiconductor amplifying elements series-connected to one another between the second terminal of said amplifying stage and a predetermined voltage, and

a control terminal of the first semiconductor amplifying element is supplied with the APC signal, a control terminal of the second semiconductor amplifying element is connected to the corresponding first terminal and an output terminal of the first semiconductor amplifying element is connected to the corresponding second terminal.

36. The high frequency power amplifier module according to claim 35, wherein the first and second semiconductor amplifying elements connected in series are a single dual gate type semiconductor amplifying element.

37. A wireless communication apparatus having a high frequency power amplifier module according to claim 35.