Semiconductor memory device and parallel bit test method thereof

• US 6,636,998 B1
• Filed: 07/05/2000
• Issued: 10/21/2003
• Est. Priority Date: 10/20/1999
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Myeong O, Lee, Jae Woong
• Primary Examiner(s): MOISE, EMMANUEL LIONEL
• Application Number:
  US09/610,498
• Time in Patent Office: 1,203 Days
• Field of Search: 714/735, 714/718, 714/719, 714/720, 714/724, 365/200, 365/189.07, 365/201
• US Class Current: 714/735
• CPC Class Codes: G11C 2029/0405 comprising complete test loop
• CPC Class Codes: G11C 2029/2602 Concurrent test
• CPC Class Codes: G11C 29/12 Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
• CPC Class Codes: G11C 29/40 using compression techniques

Abstract

A semiconductor memory device and a parallel bit test method thereof comprises a memory cell array having a plurality of memory cells, an address generator for accessing memory cells of the memory cell array in response to externally applied addresses; a test mode setting register for storing an externally applied test mode setting command; a test pattern data register for storing test pattern data applied from the test mode setting register and for outputting test pattern data at the time of performing a read command; and a comparator for comparing data read from the memory cells of the memory cell array with data of corresponding bits of test pattern data output from the test pattern data register and for generating test result data. Accordingly, the device is adapted for correctly detecting and distinguishing defective memory cells, and is amenable to performing bit tests using various non-uniform test pattern data.

Claims

1. A semiconductor memory device comprising

a memory cell array having a plurality of memory cells for storing data upon an externally applied write command and for retrieving data upon an externally applied read command;

an address generator for storing data to, and retrieving data from, the memory cells of said memory cell array, in response to an externally applied address;

a pattern data register for storing externally-applied pattern data to be written to and retrieved from the memory cells as said data according to said externally applied address, and for outputting pattern data during retrieval of said data from said memory cells; and

a comparator for comparing the retrieved data from the memory cells with the corresponding pattern data, and for generating test result data as a result of the comparison.

2. The semiconductor memory device of claim 1 further comprising a test mode setting register for receiving an externally applied test mode setting command and said externally applied data, and, in response, initiating a bit test.

3. The semiconductor memory device of claim 1, wherein said comparator comprises:

a plurality of exclusive OR gates, each for comparing elements of said retrieved data with corresponding elements of said pattern data to generate intermediate comparison data; and

OR gates for generating the result data of said test by ORing output signals of said plurality of exclusive OR gates.

4. The semiconductor memory device of claim 1, wherein said pattern data register outputs said pattern data as said data to be written to said memory cell array.

5. The semiconductor memory device of claim 1, said test pattern data to be written to the memory cell array is externally applied.

6. A method for testing a semiconductor memory device having a memory cell array including a plurality of memory cells for storing data upon an externally applied write command and for retrieving data upon an externally applied read command, comprising:

applying a test mode command to the memory device;

storing data corresponding to predetermined pattern data in the memory cells of said memory cell array in response to an externally applied address;

retrieving data from the memory cells in response to the externally applied address;

comparing the retrieved data from the memory cells with the corresponding pattern data, and generating test result data as a result of the comparison.

7. The method of claim 6 further comprising receiving the externally applied test mode command and, in response, initiating a bit test.

8. The method of claim 6, wherein said step of comparing is performed at a comparator comprising:

a plurality of exclusive OR gates, each for comparing elements of said retrieved data with corresponding elements of said pattern data to generate intermediate comparison data; and

OR gates for generating the result data of said test by ORing output signals of said plurality of exclusive OR gates.

9. The method of claim 6, wherein said predetermined pattern data is stored in a register.

10. The method of claim 6, wherein said predetermined pattern data to be written to the memory cell array is externally applied.