Semiconductor device and method of fabricating the same
First Claim
Patent Images
1. A semiconductor device comprising:
- a first substrate;
second substrate; and
a plurality of columnar spacers disposed between said first substrate and said second substrate, each of said columnar spacers having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and wherein a radius R of curvature of said edge is 2 μ
m or less.
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Abstract
There is provided a high quality liquid crystal panel having a thickness with high accuracy, which is designed, without using a particulate spacer, within a free range in accordance with characteristics of a used liquid crystal and a driving method, and is also provided a method of fabricating the same. The shape of a spacer for keeping a substrate interval constant is made such that it is a columnar shape, a radius R of curvature is 2 μm or less, a height H is 0.5 μm to 10 μm, a diameter is 20 μm or less, and an angle α is 65° to 115°. By doing so, it is possible to prevent the lowering of an opening rate and the lowering of light leakage due to orientation disturbance.
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Citations
102 Claims
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1. A semiconductor device comprising:
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a first substrate;
second substrate; and
a plurality of columnar spacers disposed between said first substrate and said second substrate, each of said columnar spacers having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and wherein a radius R of curvature of said edge is 2 μ
m or less.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A method of fabricating a semiconductor device comprising the steps of:
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forming a thin film transistor over a substrate;
forming a leveling film to cover said thin film transistor;
forming an opening in said leveling film to reach to said thin film transistor and forming a pixel electrode;
forming an alignment film on said pixel electrode;
performing a rubbing processing on said alignment film; and
forming a columnar spacer comprising an insulating film over a contact portion where said thin film transistor is connected to said pixel electrode after forming said alignment film, wherein said columnar spacers have at least an upper surface, a side surface, and an edge between said upper surface and said side surface, and wherein a radius R of curvature of said edge is 2 μ
m or less.- View Dependent Claims (30, 31, 32)
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33. A method of fabricating a semiconductor device comprising the steps of:
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forming a thin film transistor over a substrate;
forming a leveling film to cover said thin film transistor;
forming an opening in said leveling film to reach to said thin film transistor and forming a pixel electrode;
forming a columnar spacer comprising an insulating film over a contact portion where said thin film transistor is connected to said pixel electrode;
forming an alignment to cover said pixel electrode and said columnar spacer; and
performing a rubbing processing on said alignment film, wherein said columnar spacers have at least an upper surface, a side surface, and an edge between said upper surface and said side surface, and wherein a radius R of curvature of said edge is 2 μ
m or less.- View Dependent Claims (34, 35, 36)
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37. A semiconductor device comprising:
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a first substrate;
a second substrate; and
a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and wherein a radius of curvature of said edge is 2 μ
m or less, and a height of said columnar spacer is 10 μ
m or less.- View Dependent Claims (38, 39, 40, 41, 42)
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43. A semiconductor device comprising:
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a first substrate;
a second substrate; and
a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and wherein a radius of curvature of said edge is 2 μ
m or less, and a width of said columnar spacer is 20 μ
m or less.- View Dependent Claims (44, 45, 46, 47, 48)
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49. A semiconductor device comprising:
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first substrate;
second substrate; and
columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and wherein a radius of curvature of said edge is 2 μ
m or less, and an angle between a tangent at a center of a side columnar spacer and a substraate surface is 65°
to 115°
.- View Dependent Claims (50, 51, 52, 53, 54)
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55. A semiconductor device comprising:
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a first substrate;
a second substrate; and
a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and wherein a radius of curvature of said edge is 2 μ
m or less, a height of said columnar spacer is 10 μ
m or less, and a width of said columnar spacer is 20 μ
m or less.- View Dependent Claims (56, 57, 58, 59, 60)
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61. A semiconductor device comprising:
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a first substrate;
a second substrate; and
a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and wherein a radius of curvature of said edge is 2 μ
m or less, a height of said columnar spacer is 10 μ
m or less, and an angle between a tangent plane at a center of a side of said columnar spacer and a substrate surface is 65°
to 115°
.- View Dependent Claims (62, 63, 64, 65, 66)
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67. A semiconductor device comprising:
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a first substrate;
a second substrate; and
a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and wherein a radius of curvature of said edge is 2 μ
m or less, a width of said columnar spacer is 20 μ
m or less, and an angle between a tangent plane at a center of a side of said columnar spacer and a substrate surface is 65°
to 115°
.- View Dependent Claims (68, 69, 70, 71, 72)
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73. A semiconductor device comprising:
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a first substrate;
a second substrate; and
a columnar spacer disposed between said first substrate and said second substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate, and wherein a radius of curvature of said edge is 2 μ
m or less, a height of said columnar spacer is 10 μ
m or less, a width of said columnar spacer is 20 μ
m or less, and an angle between a tangent plane at a center of a side of said columnar spacer and a substrate surface is 65°
to 115°
.- View Dependent Claims (74, 75, 76, 77, 78)
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79. A semiconductor device comprising:
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a thin film transistor over a first substrate;
a pixel electrode electrically connected to said thin film transistor;
a columnar spacer over said first substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate; and
a light-shielding film provided over said second substrate, wherein said columnar spacer is located below said light-shielding film, and wherein a radius R of curvature of said edge is 2 μ
m or less.- View Dependent Claims (80, 81, 82, 83, 84)
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85. A semiconductor device comprising:
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a thin film transistor over a-first substrate;
a pixel electrode electrically connected to said thin film transistor in a contact hole;
a columnar spacer on said contact hole, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate; and
a light-shielding film provided over said second substrate, wherein said columnar spacer is located below said light-shielding film, and wherein a radius R of curvature of said edge is 2 μ
m or less.- View Dependent Claims (86, 87, 88, 89, 90)
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91. A semiconductor device comprising:
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a thin film transistor over a first substrate;
a pixel electrode electrically connected to said thin film transistor;
a columnar spacer over said first substrate, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate and a radius R of curvature of said edge is 2 μ
m or less; and
a light-shielding film provided over said second substrate, wherein said columnar spacer is overlapped with said light-shielding film. - View Dependent Claims (92, 93, 94, 95, 96)
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97. A semiconductor device comprising:
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a thin film transistor over a first substrate;
a pixel electrode electrically connected to said thin film transistor in a contact hole;
a columnar spacer on said contact hole, said columnar spacer having at least an upper surface, a side surface, and an edge between said upper surface and said side surface, wherein said upper surface faces a surface of said second substrate and a radius R of curvature of said edge is 2 μ
m or less; and
a light-shielding film provided over said second substrate, wherein said columnar spacer is overlapped with said light-shielding film. - View Dependent Claims (98, 99, 100, 101, 102)
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Specification