Hot-filament chemical vapor deposition chamber and process with multiple gas inlets
First Claim
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1. A method for the deposition of a thin film material upon a substrate comprising the steps of:
- providing a confinement cup;
providing a substrate in the confinement cup;
providing a vacuum source for evacuating the confinement cup to sub-atmospheric pressure;
providing a dense hot filament which is heated to about 1500 C. or higher;
providing at least one first gas inlet adjacent the dense filament for introducing at least one gas into the evacuated confinement cup through the inlet; and
providing at least one second gas inlet in a spaced apart relationship to the dense filament and introducing at least one gas into the evacuated confinement cup through the inlet.
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Abstract
A thin film deposition method uses a vacuum confinement cup that employs a dense hot filament and multiple gas inlets. At least one reactant gas is introduced into the confinement cup both near and spaced apart from the heated filament. An electrode inside the confinement cup is used to generate plasma for film deposition. The method is used to deposit advanced thin films (such as silicon based thin films) at a high quality and at a high deposition rate.
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Citations
15 Claims
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1. A method for the deposition of a thin film material upon a substrate comprising the steps of:
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providing a confinement cup;
providing a substrate in the confinement cup;
providing a vacuum source for evacuating the confinement cup to sub-atmospheric pressure;
providing a dense hot filament which is heated to about 1500 C. or higher;
providing at least one first gas inlet adjacent the dense filament for introducing at least one gas into the evacuated confinement cup through the inlet; and
providing at least one second gas inlet in a spaced apart relationship to the dense filament and introducing at least one gas into the evacuated confinement cup through the inlet. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification