Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
First Claim
Patent Images
1. A method to perform atomic layer deposition comprising:
- pretreating a surface of a substrate or a material layer formed on the substrate by introducing a radical specie including any combination of O2, H2, H2O, NH3, NF3, N2, Cl and F to increase AHx termination sites on the surface, where x is an integer and A is a non-metal capable of bonding with hydrogen H;
introducing a first precursor to deposit a first reactive specie on the surface, the surface when pretreated being more receptive to have additional bonding with the first reactive specie, due to the increase of AHx termination sites on the surface; and
introducing a second precursor, after the bonding of the first reactive specie, to deposit a second reactive specie to react with the deposited first reactive specie to form a film layer.
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Abstract
A method and apparatus for performing atomic layer deposition in which a surface of a substrate is pretreated to make the surface of the substrate reactive for performing atomic layer deposition.
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Citations
31 Claims
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1. A method to perform atomic layer deposition comprising:
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pretreating a surface of a substrate or a material layer formed on the substrate by introducing a radical specie including any combination of O2, H2, H2O, NH3, NF3, N2, Cl and F to increase AHx termination sites on the surface, where x is an integer and A is a non-metal capable of bonding with hydrogen H;
introducing a first precursor to deposit a first reactive specie on the surface, the surface when pretreated being more receptive to have additional bonding with the first reactive specie, due to the increase of AHx termination sites on the surface; and
introducing a second precursor, after the bonding of the first reactive specie, to deposit a second reactive specie to react with the deposited first reactive specie to form a film layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A method to perform atomic layer deposition comprising:
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depositing an intermediate layer;
pretreating a surface of the deposited intermediate layer by introducing a radical specie including any combination of O2, H2, H2O, NH3, NF3, N2, Cl and F to increase AHx termination sites on the surface, where x is an integer and A is a non-metal capable of bonding with hydrogen H;
introducing a first precursor to deposit a first reactive specie on the surface, the surface when pretreated being more receptive to have additional bonding with the first reactive specie, due to the increase of AHx termination sites on the surface; and
introducing a second precursor, after the bonding of the first reactive specie, to deposit a second reactive specie to react with the deposited first reactive specie to form a film layer.
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31. A method to perform atomic layer deposition comprising:
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leaching hydrogen or fluorine from a surface by pretreating the surface by introducing a radical specie including any combination of O2, H2, H2O, NH3, NF3, N2, Cl and F to increase AHx termination sites on the surface, where x is an integer and A is a non-metal capable of bonding with hydrogen H;
introducing a first precursor to deposit a first reactive specie on the surface, the surface when pretreated being more receptive to have additional bonding with the first reactive specie, due to the increase of AHx termination sites on the surface; and
introducing a second precursor, after the bonding of the first reactive specie, to deposit a second reactive specie to react with the deposited first reactive specie to form a film layer.
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Specification