Semi-insulating silicon carbide without vanadium domination
First Claim
Patent Images
1. A semi-insulating bulk single crystal of silicon carbide having a resistivity of at least 5000 Ω
- -cm at room temperature and a concentration of deep level trapping elements that is below 1×
1016 cm−
3 and a concentration of nitrogen atoms below 1×
1017 cm−
3.
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Abstract
A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 Ω-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
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Citations
5 Claims
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1. A semi-insulating bulk single crystal of silicon carbide having a resistivity of at least 5000 Ω
- -cm at room temperature and a concentration of deep level trapping elements that is below 1×
1016 cm−
3 and a concentration of nitrogen atoms below 1×
1017 cm−
3. - View Dependent Claims (2)
- -cm at room temperature and a concentration of deep level trapping elements that is below 1×
-
3. A semi-insulating bulk single crystal of silicon carbide having a resistivity of at least 5000 Ω
- -cm at room temperature and a concentration of deep level trapping elements that is below 1×
1016 cm−
3 and the concentration of vanadium is less than 1×
1016 cm−
3. - View Dependent Claims (4)
- -cm at room temperature and a concentration of deep level trapping elements that is below 1×
-
5. A semi-insulating bulk single crystal of silicon carbide having a resistivity of at least 50,000 Ω
- -cm at room temperature and a concentration of deep level trapping elements that is below 1×
1016 cm−
3.
- -cm at room temperature and a concentration of deep level trapping elements that is below 1×
Specification
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Current AssigneeCREE Incorporated (Wolfspeed, Inc.)
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Original AssigneeCREE Incorporated (Wolfspeed, Inc.)
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InventorsBrady, Mark, Tsvetkov, Valeri F., Carter, Calvin H. Jr.
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Primary Examiner(s)Clark, Sheila V.
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Application NumberUS09/810,830Publication NumberTime in Patent Office956 DaysField of Search257/77, 257/76, 257/78, 438/285, 438/483, 438/518, 438/602, 438/604US Class Current257/77CPC Class CodesC30B 23/00 Single-crystal growth by co...C30B 29/36 CarbidesC30B 33/00 After-treatment of single c...
