Structure and method for fabrication for a solid-state lighting device

• US 6,639,249 B2
• Filed: 08/06/2001
• Issued: 10/28/2003
• Est. Priority Date: 08/06/2001
• Status: Active Grant

• Current Assignee: Google Technology Holdings LLC (Alphabet Inc.)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Valliath, George
• Primary Examiner(s): Loke, Steven
• Assistant Examiner(s): Kang, Donghee
• Application Number:
  US09/921,894
• Publication Number:
  US 20030113949A1
• Time in Patent Office: 813 Days
• Field of Search: 257/88, 257/89, 257/90, 257/98, 257/94, 257/103, 257/102, 257/13, 438/22, 438/24, 438/46, 438/47
• US Class Current: 257/88
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/0066 with a substrate not being a III-V compound

Abstract

A multi-color, solid-state lighting device includes a stack of two or more panels, each panel having an array of light emitting semiconductor components formed thereon. To form the light emitting components, high quality epitaxial layers of monocrystalline materials can be grown overlying a monocrystalline layer of silicon formed on a low cost substrate, such as glass. The growth of the monocrystalline materials is accomplished by forming a compliant substrate for growing the monocrystalline materials. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer.

Claims

1. A device for providing light, comprising:

a first panel including;

a first glass substrate;

a first monocrystalline silicon layer formed on the first glass substrate;

a first amorphous oxide material layer overlying the first monocrystalline silicon layer;

a first monocrystalline perovskite oxide material layer overlying the first amorphous oxide matrial layer;

a first monocrystalline compound semiconductor material layer overlying the first monocrystalline perovskite oxide material layer; and

a first light-emitting semiconductor component, formed using the first monocrystalline compound semiconductor material layer, for emitting light at a first wavelength; and

a second panel overlying the first panel, including;

a second glass substrate;

a second monocrystalline silicon layer formed on the second glass substrate;

a second amorphous oxide material layer overlying the second monocrystalline silicon layer;

a second monocrystalline perovskite oxide material layer overlying the second amorphous oxide material layer;

a second monocrystalline compound semiconductor material layer overlying the second monocrystalline perovskite oxide material layer; and

a second light-emitting semiconductor component, formed using the second monocrystalline compound semiconductor material layer, for emitting light at a second wavelength.

2. The device of claim 1, further comprising:

a third panel overlying the second panel, including;

a third glass substrate;

a third monocrystalline silicon layer formed on the third glass substrate;

a third amorphous oxide material layer overlying the third monocrystalline silicon layer;

a third monocrystalline perovskite oxide material layer overlying the third amorphous oxide material layer;

a third monocrystalline compound semiconductor material layer overlying the third monocrystalline perovskite oxide material layer; and

a third light-emitting semiconductor component, formed using the third monocrystalline compound semiconductor material layer, for emitting light at a third wavelength.

3. The device of claim 2, wherein the first wavelength, the second wavelength, and the third wavelength have values selected so that white light is produced when emissions of the first light-emitting semiconductor component, the second light-emitting semiconductor component, and the third light-emitting semiconductor component are combined.

4. The device of claim 1, further comprising:

a diffuser overlying the third panel.

5. The device of claim 1, wherein the first monocrystalline silicon layer and second monocrystalline silicon layer are formed on the first glass substrate and the second glass substrate, respectively, using a lateral solidification technique.

6. A process for fabricating a structure for producing light, comprising:

providing a first glass substrate;

forming a first monocrystalline silicon layer on the first glass substrate;

depositing a first monocrystalline perovskite oxide film overlying the first monocrystalline silicon layer, the film having a thickness less than a thickness of the material that would result in strain-induced defects;

forming a first amorphous oxide interface layer containing at least silicon and oxygen at an interface between the first monocrystalline perovskite oxide film and the first monocrystalline silicon layer;

epitaxially forming a first monocrystalline compound semiconductor layer overlying the first monocrystalline perovskite oxide film;

forming a first light-emitting semiconductor component for emitting light at a first wavelength, using the first monocrystalline compound semiconductor layer;

providing a second glass substrate for overlying the first glass substrate;

forming a second monocrystalline silicon layer on the second glass substrate;

depositing a second monocrystalline perovskite oxide film overlying the second monocrystalline silicon layer, the film having a thickness less than a thickness of the material that would result in strain-induced defects;

forming a second amorphous oxide interface layer containing at least silicon and oxygen at an interface between the second monocrystalline perovskite oxide film and the second monocrystalline silicon layer;

epitaxially forming a second monocrystalline compound semiconductor layer overlying the second monocrystalline perovskite oxide film; and

forming a second light-emitting semiconductor component for emitting light at a second wavelength, using the second monocrystalline compound semiconductor layer.

7. The process of claim 6, further comprising:

providing a third glass substrate for overlying the second glass substrate;

forming a third monocrystalline silicon layer on the third glass substrate; and

depositing a third monocrystalline perovskite oxide film overlying the third monocrystalline silicon layer, the film having a thickness less than a thickness of the material that would result in strain-induced defects;

forming a third amorphous oxide interface layer containing at least silicon and oxygen at an interface between the third monocrystalline perovskite oxide film and the third monocrystalline silicon layer;

epitaxially forming a third monocrystalline compound semiconductor layer overlying the third monocrystalline perovskite oxide film; and

forming a third light-emitting semiconductor component for emitting light at a third wavelength, using the third monocrystalline compound semiconductor layer.

8. The process of claim 7, wherein the first wavelength, the second wavelength, and the third wavelength have values selected so that white light is produced when emissions of the first light-emitting semiconductor component, the second light-emitting semiconductor component, and the third light-emitting semiconductor component are combined.

9. The process of claim 6, further comprising:

providing a diffuser for overlying the third glass substrate.

10. The process of claim 6, wherein the steps of forming first monocrystalline silicon layer and second monocrystalline silicon layer include applying a lateral solidification technique.

11. The process of claim 6, wherein the steps of forming the first monocrystalline silicon layer includes:

depositing a silicon film on the first glass substrate;

irradiating a first portion of the silicon film so as to melt the silicon film in the first portion;

permitting the melted silicon film in the first portion to solidify to form at least one silicon crystal;

irradiating a second portion of the silicon film that at least partially overlaps the at least one silicon crystal so as to melt the silicon film in the second portion; and

permitting the melted silicon film in the second portion to solidify to enlarge the at least one silicon crystal.