Finishing components and elements

• US 6,641,463 B1
• Filed: 05/20/2002
• Issued: 11/04/2003
• Est. Priority Date: 02/06/1999
• Status: Expired due to Term

• Current Assignee: Semcon Tech LLC (IPNav)
• Original Assignee: Beaver Creek Concepts, Inc.
• Inventors: Molnar, Charles J.
• Primary Examiner(s): Hail, III, Joseph J.
• Assistant Examiner(s): McDonald, Shantese
• Application Number:
  US10/151,515
• Time in Patent Office: 533 Days
• Field of Search: 451/41, 451/60, 451/286, 451/287, 451/288, 451/527, 451/530, 451/539, 451/921, 512/98
• US Class Current: 451/41
• CPC Class Codes: B24B 37/042 operating processes therefor
• CPC Class Codes: B24B 37/245 Pads with fixed abrasives
• CPC Class Codes: B24D 3/28 Resins or natural or synthetic macromolecular compounds B24D3/22 takes precedence
• CPC Class Codes: B24D 3/346 utilised during polishing, or grinding operation
• CPC Class Codes: B24D 7/063 with segments embedded in a matrix which is rubbed away during the grinding process
• CPC Class Codes: Y10S 451/921 Pad for lens shaping tool

Abstract

New, versatile finishing surfaces are described. Unitary finishing elements having discrete finishing members attached to unitary resilient body are disclosed for finishing microdevices such as semiconductor wafers. Finishing surfaces such as discrete finishing members can be comprised of a multiphase polymeric composition. The new unitary finishing elements have lower cost to manufacture and high precision. The unitary finishing elements and finishing surfaces can reduce unwanted surface defect creation on the semiconductor wafers during finishing.

Claims

1. A unitary refining element having a plurality of discrete refining members for refining a semiconductor wafer comprising:

discrete refining members wherein;

each discrete refining member has a surface area of less than the surface area of the semiconductor wafer being finished;

each discrete refining member has a discrete refining member refining surface and a refining member body;

each refining member body is comprised of a continuous region of organic synthetic resin; and

a ratio of the shortest distance across in centimeters of the discrete refining member body to the thickness in centimeters of each discrete refining member body is at least 10/1;

a unitary resilient body comprised of an organic polymer wherein the unitary resilient body has a plurality of discrete refining members attached to the unitary resilient body in such a manner that each discrete refining member is separated in space from its nearest discrete refining member; and

the organic polymer of the unitary resilient body has a different flexural modulus than the organic synthetic resin in the continuous region of the refining member body.

2. The unitary refining element according to claim 1 wherein each discrete refining member has three dimensional discrete synthetic resin particle refining surface.

3. The unitary refining element according to claim 2 wherein the unitary refining element includes discrete refining members comprising a foam.

4. The unitary refining element according to claim 3 wherein the foam comprises a closed cell foam.

5. The unitary refining element according to claim 3 wherein the foam comprises an open cell foam.

6. The unitary refining element according to claim 1 wherein each discrete refining member comprises a multiphase polymeric composition.

7. The unitary refining element according to claim 6 wherein the unitary refining element includes discrete refining members comprising a foam.

8. The unitary refining element according to claim 7 wherein the foam comprises a closed cell foam.

9. The unitary refining element according to claim 7 wherein the foam comprises an open cell foam.

10. The unitary refining element according to claim 7 wherein the unitary refining element includes discrete refining members having abrasive surfaces.

11. The unitary refining element according to claim 6 wherein the unitary refining element includes discrete refining members having abrasive surfaces.

12. The unitary refining element according to claim 1 wherein each discrete refining member comprises a multiphase polymeric composition comprising:

a continuous phase of organic synthetic resin comprised polymer “

A”

; and

discrete synthetic resin particles comprised of polymer “

B”

.

13. The unitary refining element according to claim 12 wherein the unitary refining element includes discrete refining members comprising a foam.

14. The unitary refining element according to claim 13 wherein the foam comprises a closed cell foam.

15. The unitary refining element according to claim 1 wherein each discrete refining member comprises a multiphase polymeric composition comprising:

a continuous phase of organic synthetic resin comprised polymer “

A”

;

discrete synthetic resin particles comprised of polymer “

B”

; and

a compatibilizing agent comprised of polymer “

C”

.

16. The unitary refining element according to claim 15 wherein the unitary refining element includes discrete refining members comprising a foam.

17. The unitary refining element according to claim 16 wherein the foam comprises a closed cell foam.

18. The unitary refining element according to claim 16 wherein the unitary refining element includes discrete refining members having abrasive surfaces.

19. The unitary refining element according to claim 16 wherein the foam comprises an open cell foam.

20. The unitary refining element according to claim 1 wherein the unitary refining element includes discrete refining members comprising a foam.

21. The unitary refining element according to claim 20 wherein the foam comprises a closed cell foam.

22. The unitary refining element according to claim 20 wherein the foam comprises an open cell foam.

23. The unitary refining element according to claim 20 wherein the unitary refining element includes discrete refining members having abrasive surfaces.

24. The unitary refining element according to claim 1 wherein the unitary refining element includes discrete refining members having abrasive surfaces.

25. A method of buffing a semiconductor wafer surface with a unitary buffing element having a plurality of discrete buffing members comprising the steps of:

providing a unitary buffing element comprising

the plurality of discrete buffing members wherein;

each discrete buffing member has a surface area of less than the surface area of the semiconductor wafer being finished;

each discrete buffing member has a discrete buffing member buffing surface and a buffing member body; and

each buffing member body is comprised of a continuous region of polymer;

a unitary resilient body comprised of an organic polymer and wherein the unitary resilient body having the plurality of separate and distinct buffing members attached to the unitary resilient body;

positioning the semiconductor wafer surface proximate to the unitary buffing element;

applying an operative buffing motion with a buffing pressure between the semiconductor wafer surface and the discrete buffing members; and

buffing the semiconductor wafer surface.

26. The method of buffing according to claim 25 wherein applying the operative buffing motion keeps the discrete buffing member buffing surfaces substantially parallel with the semiconductor wafer surface being finished.

27. A method of buffing according to claim 25 wherein the operative buffing motion applies movement to each discrete buffing member buffing surface which is within 1 degree of parallel with the semiconductor wafer surface being finished during buffing.

28. A process for refining a semiconductor wafer surface with a multiphase polymeric composition, the multiphase polymeric composition comprising:

a multiphase synthetic polymer composition having a continuous phase of synthetic polymer “

A” and

a synthetic polymer “

B” and

wherein the multiphase composition has at least two distinct glass transition temperatures; and

a compatibilizing polymer “

C”

;

and the process for refining comprises the steps of;

applying the multiphase polymeric composition to a semiconductor wafer surface; and

operatively refining a semiconductor wafer surface with the multiphase polymeric composition.

29. The process according to claim 28 wherein the polymer “

B”

comprises a crosslinked polymer.

30. The process according to claim 28 wherein the multiphase synthetic polymer composition has discrete synthetic resin particles of the synthetic polymer “

B” and

the discrete synthetic resin particles are dynamically formed during melt mixing and polymer “

B”

comprises a crosslinked polymer rendered substantially more heat resistant than the noncrosslinked polymer “

B”

.

31. The process according to claim 28 wherein at least one of the polymers has been post crosslinked after shaping.

32. A process for refining a semiconductor wafer surface with an multiphase polymeric composition, the multiphase polymeric composition comprising:

a multiphase synthetic polymer composition comprising a first polymer and a second polymer;

at least one of the first or second polymer precleaned by undergoing a precleaning which removes material capable of scratching a semiconductor wafer surface, the precleaing done before adding the precleaned polymer to the multiphase polymeric composition;

and the process for refining comprising the steps of;

applying the multiphase polymeric composition to a semiconductor wafer surface; and

operatively refining the semiconductor wafer surface with the multiphase polymeric composition.

33. The process according to claim 32 wherein the precleaning comprises a solvent extraction.

34. The process according to claim 33 wherein the precleaning comprises a thermally assisted precleaning.

35. The process according to claim 33 wherein at least one precleaned polymer has a number average molecular weight of at least 5,000.

36. The process according to claim 33 wherein the precleaning comprises cleaning a plurality of polymers wherein both particles and particle forming materials are removed in order to provide a plurality of cleaned polymers having unwanted particles capable of scratching the semiconductor wafer removed prior to combining the polymers to form the multiphase polymeric composition.

37. A process for refining a semiconductor wafer surface with an multiphase polymeric composition, the multiphase polymeric composition comprising:

a multiphase synthetic polymer composition comprising a first polymer and a second polymer;

at least one of the first or second polymers comprising a filtered polymer by undergoing a filtering which removes particles capable of scratching a semiconductor wafer surface, the filtering done before adding the filtered polymer to the multiphase polymeric composition;

and the process for refining comprising the steps of;

applying the multiphase polymeric composition to a semiconductor wafer surface; and

operatively refining the semiconductor wafer surface with the multiphase polymeric composition.

38. The process according to claim 37 wherein the filtering comprises a solvent assisted filtration.

39. The process according to claim 37 wherein the filtering comprises a thermally assisted filtration.

40. The process according to claim 37 wherein the filtering comprises filtering a plurality of polymers wherein both particles and particle forming materials are removed in order to provide a plurality of filtered polymers having unwanted particles capable of scratching the semiconductor wafer removed prior to combining the polymers to form the multiphase polymeric composition.