Integrated process for depositing layer of high-K dielectric with in-situ control of K value and thickness of high-K dielectric layer

• US 6,642,066 B1
• Filed: 05/15/2002
• Issued: 11/04/2003
• Est. Priority Date: 05/15/2002
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Arsania, Farzad, Halliyal, Arvind
• Primary Examiner(s): GHYKA, ALEXANDER G
• Application Number:
  US10/145,942
• Time in Patent Office: 538 Days
• Field of Search: 438/758, 438/785, 438/7, 438/16, 356/364, 356/369, 356/625, 356/635
• US Class Current: 438/16
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: H01L 21/02142 the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
• CPC Class Codes: H01L 21/02145 the material containing aluminium, e.g. AlSiOx
• CPC Class Codes: H01L 21/02148 the material containing hafnium, e.g. HfSiOx or HfSiON
• CPC Class Codes: H01L 21/02175 characterised by the metal H01L21/02197 takes precedence
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/02183 the material containing tantalum, e.g. Ta2O5
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02189 the material containing zirconium, e.g. ZrO2
• CPC Class Codes: H01L 21/02192 the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
• CPC Class Codes: H01L 21/02194 the material containing more than one metal element
• CPC Class Codes: H01L 21/02197 the material having a perovskite structure, e.g. BaTiO3
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/31604 Deposition from a gas or vapour H01L21/31691, H01L21/31695 take precedence
• CPC Class Codes: H01L 21/31691 with perovskite structure
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring

Abstract

An apparatus and a method of depositing a dielectric material film, including steps of initiating a process of depositing a dielectric material film under at least one controllable initial condition in an apparatus comprising a dielectric material deposition chamber and a spectroscopic ellipsometer; and measuring, by the spectroscopic ellipsometer, at least one ellipsometric parameter of the dielectric material film during the process of depositing the film.

Claims

1. A method of depositing a dielectric material film on a semiconductor substrate, comprising:

initiating a process of depositing a dielectric material film on a semiconductor substrate under at least one controllable initial condition in an apparatus comprising a dielectric material deposition chamber and a spectroscopic ellipsometer; and

measuring in situ, by the spectroscopic ellipsometer, at least one ellipsometric parameter of the dielectric material film during the process of depositing the film.

2. The method of claim 1, wherein the method further comprises controlling the at least one initial condition based on the at least one ellipsometric parameter.

3. The method of claim 2, wherein the controlling comprises adjusting stoichiometry of at least one high-K precursor and oxygen supplied to the deposition chamber to obtain a desired dielectric constant, K.

4. The method of claim 2, wherein the controlling comprises adjusting relative quantities of at least two dielectric material precursors supplied to the deposition chamber to obtain a desired dielectric constant, K.

5. The method of claim 4, wherein the at least two dielectric material precursors comprise at least one high-K dielectric material precursor and at least one of an aluminum-containing dielectric material precursor and a silicon-containing dielectric material precursor.

6. The method of claim 1, wherein the at least one ellipsometric parameter is at least one of refractive index or dielectric constant, K.

7. The method of claim 1, wherein the high-K dielectric material deposition chamber is a CVD chamber.

8. The method of claim 7, wherein the CVD is one of LPCVD, MOCVD, ALCVD or RTCVD.

9. The method of claim 1, wherein the spectroscopic ellipsometer is a variable angle spectroscopic ellipsometer.

10. The method of claim 1, wherein the high-K dielectric material is at least one of hafnium oxide (HfO₂), zirconium oxide (ZrO₂), tantalum oxide (Ta₂O₅), barium titanate (BaTiO₃), titanium dioxide (TiO₂), cerium oxide (CeO₂), lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO₃), lead titanate (PbTiO₃), strontium titanate (SrTiO₃), lead zirconate (PbZrO₃), tungsten oxide (WO₃), yttrium oxide (Y₂O₃), bismuth silicon oxide (Bi₄Si₂O₁₂), barium strontium titanate (BST) (Ba₁₋

xSr_xTiO₃), PMN (PbMg_xNb<sub>1−

x</sub>), PZT (PbZr_xTi<sub>1−

x</sub>), PZN (PbZn_xNb<sub>1−

x</sub>O₃)and PST (PbSc_xTa<sub>1−

x</sub>O₃), ferroelectric high-K dielectric materials, binary and ternary oxides having K values of about 10 or higher, silicates of one or more thereof, aluminates of one or more thereof, or mixtures of two or more thereof.

11. A method for depositing a high-K dielectric material on a semiconductor substrate, comprising:

providing an apparatus comprising both a device for depositing a dielectric material and a device configured to measure in situ at least one ellipsometric parameter relating to at least one of refractive index and dielectric constant of the dielectric material;

placing a semiconductor substrate into the apparatus;

depositing on the semiconductor substrate a film comprising a high-K dielectric material;

measuring in situ, during the depositing step, the elipsometric parameter relating to at least one of refractive index and dielectric constant of the dielectric material film; and

controlling, during the depositing step, at least one process parameter relating to the depositing step based on the ellipsometric parameter relating to at least one of refactive index and dielectric constant of the dielectric material film.

12. The method of claim 11, wherein the controlling comprises adjusting stoichiometry of at least one dielectric material precursor and oxygen supplied to the device for depositing a dielectric material.

13. The method of claim 11, wherein the controlling comprises adjusting relative quantities of at least two dielectric material precursors supplied to the device for depositing a dielectric material.

14. The method of claim 13, wherein the at leat two dielectric material precursors comprise at least one high-K dielectric material precursor and at least one of an aluminum-containing dielectric material precursor and a silicon-containing dielectric material precursor.

15. The method of claim 11, wherein the device for depositing a dielectric material is a CVD device.

16. The method of claim 15, wherein the CVD device is one of a LPCVD, MOCVD, an ALCVD or a RTCVD device.

17. The method of claim 11, wherein the device for measuring in situ at least one ellipsometric parameter relating to at least one of refractive index and dielectric constant of the high-K dielectric material is a spectroscopic ellipsometer.

18. The method of claim 11, wherein the dielectric material is at least one of hafnium oxide (HfO₂), ziconium oxide (ZrO₂), tantalum oxide (Ta₂O₅), barium titanate (BaTiO₃), titanium dioxide (TiO₂), cerium oxide (CeO₂), lanthanum oxide (La₂O₃), lanthanum aluminum oxide (LaAlO₃), lead titanate (PbTiO₃), strontium titanate (SrTiO₃), lead zirconate (PbZrO₃), tungsten oxide (WO₃), yttrium oxide (Y₂O₃), bismuth silicon oxide (Bi₄Si₂O₁₂), barium strontium titanate (BST) (Ba₁₋

xSr_xTiO₃), PMN (PbMg_xNb<sub>1−

x</sub>O₃), PZT (PbZr_xTi<sub>1−

x</sub>O₃), PZN (PbZn_xNb<sub>1−

x</sub>O₃), and PST (PbSc_xTa<sub>1−

x</sub>O₃), ferroelectric high-K dielectric materials, binary and ternary oxides having K values of about 10 or higher, silicates of one or more thereof, aluminates of one or more thereof, or mixtures of two or more thereof.

19. A method of depositing a dielectric material film on a semiconductor substrate, comprising:

initiating a process of depositing a dielectric material film on the semiconductor substrate under at least one controllable initial condition in an apparatus comprising a dielectric material deposition chamber and a spectroscopic ellipsometer;

measuring in situ, by the spectroscopic ellipsometer, at least one ellipsometric parameter of the dielectric material film during the process of depositing the film; and

controlling, during the depositing step, the at least one controllable initial condition based on the elipsometric parameter relating to at least one of refractive index and dielectric constant of the dielectric material film.

20. A method as in claim 19, wherein the controlling comprises adjusting stoichiometry of at least one dielectric material precursor and oxygen supplied to the device for depositing a dielectric material.

21. The method of claim 19, wherein the controlling comprises adjusting relative quantities of at least two dielectric material precursors supplied to the device for depositing a dielectric material.