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METHOD OF FORMING A SILICON-CONTAINING METAL-OXIDE GATE DIELECTRIC BY DEPOSITING A HIGH DIELECTRIC CONSTANT FILM ON A SILICON SUBSTRATE AND DIFFUSING SILICON FROM THE SUBSTRATE INTO THE HIGH DIELECTRIC CONSTANT FILM

  • US 6,642,131 B2
  • Filed: 04/16/2002
  • Issued: 11/04/2003
  • Est. Priority Date: 06/21/2001
  • Status: Expired due to Term
First Claim
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1. A method for producing a semiconductor device comprising the steps of:

  • forming a high dielectric constant film containing a metal, oxygen and a predetermined substance on a substrate;

    performing a heat treatment with respect to the high dielectric constant film to diffuse silicon from the side of the substrate into vacancies left by the predetermined substance in the high dielectric constant film, thereby forming a silicon-containing high dielectric constant film; and

    forming a conductive film for serving as a gate electrode on the silicon-containing high dielectric constant film.

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