Linearity radio frequency switch with low control voltage
First Claim
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1. A field effect transistor comprising:
- a plurality of gate lines, a source terminal electrically coupled to a source finger, a drain terminal electrically coupled to a drain finger, a first end of a first feed forward capacitor electrically coupled to the source terminal and at a second end electrically coupled to at least one gate line at a first plurality of points along the at least one gate line, and, a first end of a second feed forward capacitor electrically coupled to the drain terminal and at a second end electrically coupled to the at least one gate line at a second plurality of points along the at least one gate line.
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Abstract
A field effect transistor used in radio frequency switching applications and having a linear performance characteristic is disclosed. The transistor comprises a plurality of gate lines, a source terminal, a drain terminal, and two feed forward capacitors electrically coupled to the source and drain terminals and the gate line at a plurality of points along the line. An improved transistor preferably includes three or more gate lines to help improve harmonic suppression.
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Citations
20 Claims
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1. A field effect transistor comprising:
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a plurality of gate lines, a source terminal electrically coupled to a source finger, a drain terminal electrically coupled to a drain finger, a first end of a first feed forward capacitor electrically coupled to the source terminal and at a second end electrically coupled to at least one gate line at a first plurality of points along the at least one gate line, and, a first end of a second feed forward capacitor electrically coupled to the drain terminal and at a second end electrically coupled to the at least one gate line at a second plurality of points along the at least one gate line. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of switching a radio frequency signal having a signal strength of greater than 24 dBm and preferably up to 35.5 dBm, comprising:
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providing a field effect transistor as a series switching device, the transistor comprising;
a plurality of gate lines, a source terminal electrically coupled to a source finger, a drain terminal electrically coupled to a drain finger, a first end of a first feed forward capacitor electrically coupled to the source terminal and at a second end electrically coupled to at least one gate line at a first plurality of points along the line, and, a first end of a second feed forward capacitor electrically coupled to the drain terminal and at a second end electrically coupled to at least one gate line at a second plurality of points along the line. - View Dependent Claims (17, 18, 19, 20)
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Specification