Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures

• US 6,643,008 B1
• Filed: 02/26/2002
• Issued: 11/04/2003
• Est. Priority Date: 02/26/2002
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Stirton, James Broc, Lensing, Kevin R.
• Primary Examiner(s): Font, Frank G.
• Assistant Examiner(s): Nguyen, Sang H.
• Application Number:
  US10/083,699
• Time in Patent Office: 616 Days
• Field of Search: 356/237--23, 356/388, 356/392, 356/394, 250/492.3, 250/492.2, 250/492.22, 250/492.1, 430/290, 430/311, 430/30.5, 438/14-16
• US Class Current: 356/237.5
• CPC Class Codes: G01N 21/95684 Patterns showing highly reflecting parts, e.g. metallic elements
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/7065 Defects, e.g. optical inspection of patterned layer for defects
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

The present invention is generally directed to various methods of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures. In one embodiment, the method comprises providing a wafer comprised of a plurality of grating structures, each of the grating structures being comprised of a plurality of features, each of the grating structures having a different critical dimension, illuminating at least one of the grating structures, measuring light reflected off of at least one of the grating structures to generate an optical characteristic trace for the grating structure, and determining the presence of residual photoresist material between the features of the grating structure by comparing the generated optical characteristic trace to at least one optical characteristic trace from a library. In some embodiments, the grating structures are arranged in a linear array. In one illustrative embodiment, the device comprises a wafer and a plurality of grating structures formed above the wafer, each of the grating structures having a different critical dimension, and at least one of the grating structures having a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

Claims

1. A method, comprising:

providing a wafer comprised of a plurality of grating structures, each of said grating structures being comprised of a plurality of features, each of said grating structures having a different critical dimension;

illuminating at least one of said plurality of grating structures;

measuring light reflected off of at least one of said grating structures to generate an optical characteristic trace for said at least one grating structure; and

determining the presence of residual photoresist material between said features of said at least one grating structure by comparing said generated optical characteristic trace to at least one optical characteristic trace from a library.

2. The method of claim 1, wherein said plurality of grating structures are arranged in a linear array.

3. The method of claim 1, wherein at least one of said grating structures has a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

4. The method of claim 1, wherein each of said plurality of grating structures has a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

5. The method of claim 1, wherein a plurality of said grating structures have a critical dimension that is progressively less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

6. The method of claim 1, wherein at least one of said grating structures has a critical dimension that is greater than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

7. The method of claim 1, wherein each of said grating structures is comprised of a plurality of photoresist features, each of said grating structures having a different critical dimension.

8. The method of claim 1, wherein said plurality of grating structures are formed in at least one scribe line of said wafer.

9. The method of claim 1, wherein said critical dimension is a spacing between said features of said grating structures.

10. A method, comprising:

providing a wafer comprised of a plurality of grating structures arranged in a linear array, each of said grating structures being comprised of a plurality of photoresist features, each of said grating structures having a different critical dimension;

illuminating at least one of said plurality of grating structures;

measuring light reflected off of at least one of said grating structures to generate an optical characteristic trace for said at least one grating structure; and

determining the presence of residual photoresist material between said features of said at least one grating structure by comparing said generated optical characteristic trace to at least one optical characteristic trace from a library.

11. The method of claim 10, wherein at least one of said grating structures has a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

12. The method of claim 10, wherein at least some of said plurality of grating structures have a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

13. The method of claim 10, wherein a plurality of said grating structures have a critical dimension that is progressively less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

14. The method of claim 10, wherein at least one of said grating structures has a critical dimension that is greater than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

15. The method of claim 10, wherein said plurality of grating structures arranged in a linear array are formed in at least one scribe line of said wafer.

16. The method of claim 10, wherein said critical dimension is a spacing between said features of said grating structures.

17. A method, comprising:

providing a wafer comprised of a plurality of grating structures, each of said grating structures being comprised of a plurality of spaced-apart photoresist features, each of said grating structures having a different spacing between said photo-resist features, at least one of said grating structures having a spacing between said photoresist features that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer;

illuminating at least one of said plurality of grating structures;

measuring light reflected off of at least one of said grating structures to generate an optical characteristic trace for said at least one grating structure; and

determining the presence of residual photoresist material between said features of said at least one grating structure by comparing said generated optical characteristic trace to at least one optical characteristic trace from a library.

18. The method of claim 17, wherein said plurality of grating structures are arranged in a linear array.

19. The method of claim 17, wherein each of said plurality of grating structures has a spacing between said photoresist features that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

20. The method of claim 17, wherein a plurality of said grating structures have a spacing between said photoresist features that is progressively less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

21. The method of claim 17, wherein at least one of said grating structures has a spacing between said photoresist features that is greater than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

22. The method of claim 17, wherein said plurality of grating structures are formed in at least one scribe line of said wafer.

23. A method, comprising:

providing a wafer comprised of a plurality of grating structures arranged in a linear array, each of said grating structures being comprised of a plurality of features, each of said grating structures having a different critical dimension, at least one of said grating structures having a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer;

illuminating at least one of said plurality of grating structures;

measuring light reflected off of said at least one grating structure to generate an optical characteristic trace for said at least one grating structure; and

determining the presence of residual photoresist material between said features of said at least one grating structure by comparing said generated optical characteristic trace to at least one optical characteristic trace from a library.

24. The method of claim 23, wherein said at least one grating structure having a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer comprises a plurality of grating structures having a critical dimension that is less than said anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

25. The method of claim 23, wherein at least one of said grating structures has a critical dimension that is greater than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

26. The method of claim 23, wherein each of said grating structures have a different critical dimension.

27. The method of claim 23, wherein said plurality of grating structures are arranged in a linear array formed in at least one scribe line of said wafer.

28. The method of claim 23, wherein said critical dimension is a spacing between said features of said grating structures.

29. A device, comprising:

a wafer; and

a plurality of grating structures formed above said wafer, each of said grating structures having a different critical dimension, at least one of said grating structures having a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

30. The device of claim 29, wherein said wafer is comprised of at least one of silicon and gallium arsenide.

31. The device of claim 29, wherein said plurality of grating structures are arranged in a linear array.

32. The device of claim 31, wherein said linear array of grating structures is formed in a scribe line of said wafer.

33. The device of claim 29, wherein said grating structures are comprised of a plurality of photoresist features.

34. The device of claim 33, wherein said critical dimension of said grating structure is defined by a spacing between said photoresist features.

35. The device of claim 29, wherein at least two of said plurality of grating structures have a critical dimension that is less than said anticipated range of critical dimensions for integrated circuit devices to be formed on said wafer.

36. The device of claim 29, wherein at least some of said plurality of grating structures have critical dimensions that are representative of said anticipated range of critical dimensions for integrated circuit devices to be formed on said wafer.

37. The device of claim 29, wherein at least one of said plurality of grating structures has a critical dimension that is greater than said anticipated range of critical dimensions for integrated circuit devices to be formed on said wafer.

38. The device of claim 29, wherein at least some of said grating structures are formed in a scribe line of said wafer.

39. A device, comprising:

a wafer; and

a plurality of grating structures formed above said wafer, each of said grating structures being comprised of a plurality of photoresist features, each of said grating structures having a different critical dimension, at least two of said grating structures having a critical dimension that is less than an anticipated range of critical dimensions for integrated circuit devices to be formed on a wafer.

40. The device of claim 39, wherein said wafer is comprised of at least one of silicon and gallium arsenide.

41. The device of claim 39, wherein said plurality of grating structures are arranged in a linear array.

42. The device of claim 41, wherein said linear array of grating structures is formed in a scribe line of said wafer.

43. The device of claim 39, wherein at least some of said plurality of grating structures have critical dimensions that are representative of said anticipated range of critical dimensions for integrated circuit devices to be formed on said wafer.

44. The device of claim 39, wherein at least one of said plurality of grating structures has a critical dimension that is greater than said anticipated range of critical dimensions for integrated circuit devices to be formed on said wafer.

45. The device of claim 39, wherein at least some of said grating structures are formed in a scribe line of said wafer.

46. The device of claim 39, wherein said critical dimension of said grating structure is defined by a spacing between said photoresist features.