Electromechanical memory having cell selection circuitry constructed with nanotube technology

• US 6,643,165 B2
• Filed: 07/25/2001
• Issued: 11/04/2003
• Est. Priority Date: 07/25/2001
• Status: Expired due to Term

• Current Assignee: ZEON Corporation
• Original Assignee: Nantero Incorporated
• Inventors: Brock, Darren K., Segal, Brent M., Rueckes, Thomas
• Primary Examiner(s): Dinh, Son T.
• Application Number:
  US09/915,173
• Publication Number:
  US 20030022428A1
• Time in Patent Office: 832 Days
• Field of Search: 365/151, 365/153, 365/158, 365/101, 365/171, 365/176
• US Class Current: 365/151
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G11C 13/025 using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
• CPC Class Codes: G11C 2213/77 Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
• CPC Class Codes: G11C 2213/81 Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
• CPC Class Codes: G11C 23/00 Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
• CPC Class Codes: H01H 1/0094 Switches making use of nanoelectromechanical systems [NEMS]
• CPC Class Codes: H01L 27/10 including a plurality of individual components in a repetitive configuration
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H10B 99/10 Memory cells having a cross-point geometry
• CPC Class Codes: Y10S 977/734 Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
• CPC Class Codes: Y10S 977/742 Carbon nanotubes, CNTs
• CPC Class Codes: Y10S 977/765 with specified cross-sectional profile, e.g. belt-shaped
• CPC Class Codes: Y10S 977/943 Information storage or retrieval using nanostructure

Abstract

A memory system having electromechanical memory cells and decoders is disclosed. A decoder circuit selects at least one of the memory cells of an array of such cells. Each cell in the array is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon. The decoder circuit is constructed of crossbar junctions at least one element of each junction being a nanotube or a nanotube ribbon.

Claims

1. A memory system, comprising:

a memory cell array of electromechanical memory cells, in which each cell is a crossbar junction at least one element of which is a nanotube or a nanotube ribbon;

a decoder circuit for selecting at least one of the memory cells for access, the decoder circuit being constructed of crossbar junctions at least one element of each junction being a nanotube or a nanotube ribbon.

2. The memory system of claim 1 wherein the decoder circuit is arranged as a branching binary select system to provide a current to the at least one selected cell.

3. The memory system of claim 1 wherein the memory cell array and the decoder circuit are integrated into a single circuit chip.

4. The memory system of claim 2 wherein the branching binary select system receives address information in true and complementary form on dual rail inputs.