Ion source

• US 6,645,301 B2
• Filed: 08/09/2001
• Issued: 11/11/2003
• Est. Priority Date: 11/30/2000
• Status: Expired due to Fees

• Current Assignee: Saintech Pty Limited
• Original Assignee: Saintech Pty Limited
• Inventors: Sainty, Wayne G
• Primary Examiner(s): VerSteeg, Steven H.
• Application Number:
  US09/925,187
• Publication Number:
  US 20020092473A1
• Time in Patent Office: 824 Days
• Field of Search: 204/298.04, 204/298.14, 204/298.08, 204/298.16, 204/298.06, 204/298.34, 204/298.36, 204/298.11, 118/723, 118/723.R, 118/723.FI, 118/723.MP, 118/665, 156/345.39, 156/345.4, 313/564, 313/566, 313/359.1, 313/361.1, 313/362.1, 313/363.1, 315/111.81, 315/111.91
• US Class Current: 118/665
• CPC Class Codes: C23C 14/221 Ion beam deposition C23C14/46, C23C14/48 take precedence
• CPC Class Codes: C23C 14/54 Controlling or regulating the coating process
• CPC Class Codes: H01J 27/02 Ion sources; Ion guns for examination or processing discharge tubes H01J37/08; ion sources, ion guns for particle spectrometer or separator tubes H01J49/10; ion propulsion F03H1/00
• CPC Class Codes: H01J 27/146 End-Hall type ion sources, wherein the magnetic field confines the electrons in a central cylinder
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns

Abstract

An ion source for use in ion assisted deposition of films, has an ionization region, a gas supply supplying ionizable gas to the ionization region, a gas excitation system causing ionization of the gas, ion influencing means forming the ions into a current directed at a target, and an ion source controller controlling the ion source so as to intermittently produce the ion current.

Claims

1. An ion source including:

an ionzation region;

a gas supply;

a gas excitation system;

ion influencing means; and

an ion source controller;

wherein said gas supply supplies an ionizable gas to said ionization region;

wherein said gas excitation system causes ionization of gas in said ionization region;

wherein said ion influencing means forms ions produced in said ionization region into an ion current substantially directed at a target;

and wherein said ion source controller controls said ion source so as to intermittently produce said ion current.

2. An ion source according to claim 1 wherein said ion source controller includes a signal generator producing a regular waveform signal controlling the production of said ion current.

3. A thin film deposition system including:

deposition apparatus; and

an ion source according to claim 1;

wherein said deposition apparatus ejects a stream of deposition material towards a target, and

wherein deposition of material onto the target is substantially prevented whilst the target is subjected to said ion current.

4. A system according to claim 3 further including a shutter member that substantially blocks said stream of deposition material whilst the target is subjected to said ion current.

5. A system according to claim 4 wherein said shutter member is controlled by said ion source controller.

6. A system according to claim 5 wherein said ion source controller includes a signal generator producing a pulse waveform signal that controls said ion source and said shutter member.

7. A system according to claim 3 further including a pressure monitor wherein said pressure monitor measures the pressure of said system and wherein deposition of material onto the target recommences in response to a pressure measurement below a predetermined level.

8. A thin film deposition system including:

deposition apparatus;

an ion source according to claim 1;

and a deposition monitors,

wherein said deposition apparatus ejects a stream of material toward a target,

wherein said deposition monitor monitors the increase in thickness of material deposited on said target,

wherein said deposition monitor triggers said ion source to commence production of said ion current in response to a measured increase in deposited material above a predetermined level, and

wherein said ion source controller controls said ion source to produce said ion current for a predetermined duration.

9. A system according to claim 8 wherein said predetermined level is between 5 and 30 nm.

10. A system according to claim 8 wherein said predetermined duration is between 0.5 and 5 seconds.

11. An ion source including:

an ionization region;

a gas supply;

a cathode;

a cathode emission controller;

an anode

an electric potential generator; and

ion influencing means;

wherein said gas supply supplies an ionizable gas to said ionization region;

wherein said cathode is disposed at one end of said ionization region;

wherein said anode is disposed at an opposite longitudinal end of said ionization region;

wherein said cathode emission controller causes said cathode to emit electrons;

wherein said electric potential generator generates an electric potential between said cathode and said anode;

wherein said generated electric potential causes electrons emitted by said cathode to accelerate in the direction of said anode;

wherein electrons moving toward said anode bombard said ionization gas to produce ions;

wherein said ion influencing means forms ions produced in said ionization region into an ion current substantially directed at a target;

and wherein said cathode emission controller causes intermittent emission of electrons from said cathode such that said ion source produces an intermittent ion current.

12. An ion source according to claim 11 wherein said cathode emission controller generates a waveform current signal that is provided to said cathode to stimulate emission of electrons from said cathode.

13. An ion source according to claim 11 wherein said cathode emission controller generates a DC current signal that is provided to said cathode to stimulate emission of electrons from said cathode, wherein said DC current signal includes a continuous base current signal below a threshold current required for electron emission from said cathode and an intermittent pulse current signal superimposed on said base current signal and wherein the combination of said base current and said pulse current is above the threshold current required for electron emission from said cathode.

14. An ion source according to claim 13 wherein the pulse current signal has a duty cycle between 5% and 20%.

15. An ion source according to claim 13 wherein the total current to said cathode is above the threshold for electron emission for 5 to 20% of the total signal period.

16. An ion source including:

an ionization region;

a gas supply;

a gas excitation system;

ion influencing means; and

a gas flow controller;

wherein said gas supply supplies an ionizable gas to said ionization region;

wherein said gas excitation system causes ionization of gas in said ionization region;

wherein said ion influencing means forms ions produced in said ionization region into an ion current substantially directed at a target;

and wherein said gas flow controller controls the flow of gas into said ionization region so as to intermittently produce said ion current.

17. An ion source according to claim 16 wherein the commencement of said ion current is in response to an external trigger received by said ion source controller, said ion source controller further including a timer for controlling the duration of said ion current.

18. An ion source according to claim 16 wherein said gas supply includes a gas line, an outlet in said gas line to said ionization region and a valve disposed in said gas line to control the flow of gas to said outlet, wherein said gas flow controller includes a signal generator and wherein said signal generator generates a signal to control the opening and closing of said valve.

19. An ion source according to claim 18 wherein said valve is substantially adjacent said outlet.

20. An ion source according to claim 18 wherein said signal is a regular pulse waveform signal.

21. An ion source according to claim 20 wherein said regular pulse waveform signal has a duty cycle of between 5% and 30%.

22. An ion source according to claim 18 wherein said valve is electrically controlled by a signal from said signal generator.

23. An ion source according to claim 18 wherein said valve includes a valve seat formed in said gas line, an armature disposed in said gas line, and a coil disposed around said gas line, wherein said armature is adapted to sealingly engage said valve seat to prevent the flow of gas through said gas line, wherein said coil is charged by a signal from said signal generator, and wherein said armature disengages said valve seat in response to a change in the charging state of said coil.

24. An ion source according to claim 23 wherein said armature is biased towards a position in which said armature engages said valve seat.

25. An ion source according to claim 24 further including a magnet, wherein the magnetic field from said magnet biases said armature to engage said valve seat.

26. An ion source according to claim 16 wherein said gas supply includes one or more gas injectors, wherein said gas injectors inject a measured amount of gas into said ionization region and wherein the injection of gas from said gas injectors is controlled by said gas flow controller.

27. A thin film deposition system including deposition apparatus and an ion source according to claim 16 wherein said deposition apparatus ejects a stream of deposition material toward said target.

28. An ion source including:

an ionization region;

a gas supply;

a cathode;

a cathode emission controller;

an anode;

a magnetic field generator; and

an electric potential generator;

wherein said gas supply supplies an ionizable gas to said ionization region;

wherein said cathode is disposed at one end of said ionization region;

wherein said anode is disposed at an opposite longitudinal end of said ionization region;

wherein a longitudinal axis lies substantially between said anode and said cathode;

wherein said magnetic field generator generates a magnetic field the axis of which lies substantially parallel to said longitudinal axis;

wherein said cathode emission controller causes said cathode to emit electrons;

wherein said electric potential generator generates an electric potential between said cathode and said anode;

wherein said generated electric potential causes electrons emitted by said cathode to accelerate in the direction of said anode;

wherein electrons moving toward said anode bombard said ionizable gas to produce ions;

wherein said electric potential and said magnetic field act together to form ions produced in said ionization region into an ion current substantially directed at a target;

and wherein said electric potential is generated intermittently such that said ion source produces an intermittent ion current.

29. An ion source according to claim 28 wherein said electric potential generator provides an electric potential to said anode that causes electrons emitted by said cathode to accelerate in the direction of said anode.

30. An ion source according to claim 28 wherein said gas supply includes a gas line passing substantially through said anode, said gas line terminating in an outlet in said ionization region;

wherein said ion source includes a longitudinal axis extending generally between said anode and said cathode;

wherein said anode is substantially centered on said longitudinal axis;

wherein said outlet is disposed on said longitudinal axis of said ion source; and

wherein said outlet includes a plurality of apertures.

31. An ion source according to claim 28 wherein said ion source includes a longitudinal axis extending generally between said anode and said cathode, said ion source further including a magnetic field generator, wherein said magnetic field generator generates a magnetic field the axis of which lies substantially parallel to said longitudinal axis.

32. A control system for controlling an ion-assisted deposition process including:

a deposition monitor;

a pressure monitor;

an ion source controller; and

a deposition controller;

wherein said deposition monitor monitors the increase in thickness of deposition material on a substrate,

wherein said pressure monitor measures the pressure within a vacuum chamber in

which said ion assisted deposition process occurs,

wherein a first control signal is generated in response to a measurement by said deposition monitor of an increase in thickness of deposited material on said substrate above a predetermined amount,

wherein said deposition controller causes deposition of material onto said substrate to cease in response to said first control signal,

wherein said ion source controller causes an ion source to produce an ion current directed at said substrate for a pre-determined duration in response to said first control signal,

wherein said ion current is produced from an ionizable gas

wherein after the expiration of said predetermined duration a second control signal is generated in response to a measurement of pressure by said pressure monitor below a predetermined pressure, and

wherein said deposition controller causes the deposition of material on said substrate to recommence in response to said second control signal.