Ion source
First Claim
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1. An ion source including:
- an ionzation region;
a gas supply;
a gas excitation system;
ion influencing means; and
an ion source controller;
wherein said gas supply supplies an ionizable gas to said ionization region;
wherein said gas excitation system causes ionization of gas in said ionization region;
wherein said ion influencing means forms ions produced in said ionization region into an ion current substantially directed at a target;
and wherein said ion source controller controls said ion source so as to intermittently produce said ion current.
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Abstract
An ion source for use in ion assisted deposition of films, has an ionization region, a gas supply supplying ionizable gas to the ionization region, a gas excitation system causing ionization of the gas, ion influencing means forming the ions into a current directed at a target, and an ion source controller controlling the ion source so as to intermittently produce the ion current.
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Citations
32 Claims
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1. An ion source including:
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an ionzation region;
a gas supply;
a gas excitation system;
ion influencing means; and
an ion source controller;
wherein said gas supply supplies an ionizable gas to said ionization region;
wherein said gas excitation system causes ionization of gas in said ionization region;
wherein said ion influencing means forms ions produced in said ionization region into an ion current substantially directed at a target;
and wherein said ion source controller controls said ion source so as to intermittently produce said ion current. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
deposition apparatus; and
an ion source according to claim 1;
wherein said deposition apparatus ejects a stream of deposition material towards a target, and wherein deposition of material onto the target is substantially prevented whilst the target is subjected to said ion current.
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4. A system according to claim 3 further including a shutter member that substantially blocks said stream of deposition material whilst the target is subjected to said ion current.
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5. A system according to claim 4 wherein said shutter member is controlled by said ion source controller.
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6. A system according to claim 5 wherein said ion source controller includes a signal generator producing a pulse waveform signal that controls said ion source and said shutter member.
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7. A system according to claim 3 further including a pressure monitor wherein said pressure monitor measures the pressure of said system and wherein deposition of material onto the target recommences in response to a pressure measurement below a predetermined level.
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8. A thin film deposition system including:
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deposition apparatus;
an ion source according to claim 1;
and a deposition monitors, wherein said deposition apparatus ejects a stream of material toward a target, wherein said deposition monitor monitors the increase in thickness of material deposited on said target, wherein said deposition monitor triggers said ion source to commence production of said ion current in response to a measured increase in deposited material above a predetermined level, and wherein said ion source controller controls said ion source to produce said ion current for a predetermined duration.
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9. A system according to claim 8 wherein said predetermined level is between 5 and 30 nm.
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10. A system according to claim 8 wherein said predetermined duration is between 0.5 and 5 seconds.
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11. An ion source including:
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an ionization region;
a gas supply;
a cathode;
a cathode emission controller;
an anode an electric potential generator; and
ion influencing means;
wherein said gas supply supplies an ionizable gas to said ionization region;
wherein said cathode is disposed at one end of said ionization region;
wherein said anode is disposed at an opposite longitudinal end of said ionization region;
wherein said cathode emission controller causes said cathode to emit electrons;
wherein said electric potential generator generates an electric potential between said cathode and said anode;
wherein said generated electric potential causes electrons emitted by said cathode to accelerate in the direction of said anode;
wherein electrons moving toward said anode bombard said ionization gas to produce ions;
wherein said ion influencing means forms ions produced in said ionization region into an ion current substantially directed at a target;
and wherein said cathode emission controller causes intermittent emission of electrons from said cathode such that said ion source produces an intermittent ion current. - View Dependent Claims (12, 13, 14, 15)
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16. An ion source including:
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an ionization region;
a gas supply;
a gas excitation system;
ion influencing means; and
a gas flow controller;
wherein said gas supply supplies an ionizable gas to said ionization region;
wherein said gas excitation system causes ionization of gas in said ionization region;
wherein said ion influencing means forms ions produced in said ionization region into an ion current substantially directed at a target;
and wherein said gas flow controller controls the flow of gas into said ionization region so as to intermittently produce said ion current. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. An ion source including:
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an ionization region;
a gas supply;
a cathode;
a cathode emission controller;
an anode;
a magnetic field generator; and
an electric potential generator;
wherein said gas supply supplies an ionizable gas to said ionization region;
wherein said cathode is disposed at one end of said ionization region;
wherein said anode is disposed at an opposite longitudinal end of said ionization region;
wherein a longitudinal axis lies substantially between said anode and said cathode;
wherein said magnetic field generator generates a magnetic field the axis of which lies substantially parallel to said longitudinal axis;
wherein said cathode emission controller causes said cathode to emit electrons;
wherein said electric potential generator generates an electric potential between said cathode and said anode;
wherein said generated electric potential causes electrons emitted by said cathode to accelerate in the direction of said anode;
wherein electrons moving toward said anode bombard said ionizable gas to produce ions;
wherein said electric potential and said magnetic field act together to form ions produced in said ionization region into an ion current substantially directed at a target;
and wherein said electric potential is generated intermittently such that said ion source produces an intermittent ion current. - View Dependent Claims (29, 30, 31)
wherein said ion source includes a longitudinal axis extending generally between said anode and said cathode;
wherein said anode is substantially centered on said longitudinal axis;
wherein said outlet is disposed on said longitudinal axis of said ion source; and
wherein said outlet includes a plurality of apertures.
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31. An ion source according to claim 28 wherein said ion source includes a longitudinal axis extending generally between said anode and said cathode, said ion source further including a magnetic field generator, wherein said magnetic field generator generates a magnetic field the axis of which lies substantially parallel to said longitudinal axis.
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32. A control system for controlling an ion-assisted deposition process including:
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a deposition monitor;
a pressure monitor;
an ion source controller; and
a deposition controller;
wherein said deposition monitor monitors the increase in thickness of deposition material on a substrate, wherein said pressure monitor measures the pressure within a vacuum chamber in which said ion assisted deposition process occurs, wherein a first control signal is generated in response to a measurement by said deposition monitor of an increase in thickness of deposited material on said substrate above a predetermined amount, wherein said deposition controller causes deposition of material onto said substrate to cease in response to said first control signal, wherein said ion source controller causes an ion source to produce an ion current directed at said substrate for a pre-determined duration in response to said first control signal, wherein said ion current is produced from an ionizable gas wherein after the expiration of said predetermined duration a second control signal is generated in response to a measurement of pressure by said pressure monitor below a predetermined pressure, and wherein said deposition controller causes the deposition of material on said substrate to recommence in response to said second control signal.
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Specification