Process for forming a microcrystalline silicon series thin film and apparatus suitable for practicing said process

• US 6,645,573 B2
• Filed: 03/03/1999
• Issued: 11/11/2003
• Est. Priority Date: 03/03/1998
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sano, Masafumi, Higashikawa, Makoto
• Primary Examiner(s): CHEN, BRET P
• Application Number:
  US09/261,499
• Publication Number:
  US 20010019746A1
• Time in Patent Office: 1,714 Days
• Field of Search: 427/569, 427/578
• US Class Current: 427/569
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/509 using internal electrodes
• CPC Class Codes: C23C 16/545 for coating elongated substrates

Abstract

A process for forming a microcrystalline silicon series thin film by arranging a long substrate in a vacuum chamber so as to oppose an electrode provided in the vacuum chamber and while transporting the long substrate in a longitudinal direction, causing glow discharge between the electrode and the long substrate to deposit the microcrystalline silicon series thin film on the long substrate, wherein a plurality of bar-like shaped electrodes as the electrode are arranged such that they are perpendicular to a normal line of the long substrate and their intervals to the long substrate are all or partially different. The glow discharge is caused using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz, whereby depositing the microcrystalline series thin film on the long substrate. An apparatus suitable for practicing the process is included.

Claims

1. A process for forming a microcrystalline silicon series thin film with a plasma CVD process, comprising arranging a substrate in a vacuum chamber, so as to oppose an electrode provided in said vacuum chamber, and while transporting said substrate, causing a glow discharge between said electrode and said substrate to deposit said microcrystalline silicon series thin film on said substrate, wherein a plurality of bar-shaped electrodes as said electrode are arranged such that they are perpendicular to a normal line of said substrate and their intervals to said substrate are all different or in part different, and said glow discharge is caused using a high frequency power with an oscillation frequency in a range of from 50 MHz to 550 MHz.

2. A process according to claim 1, wherein said plurality of bar-shaped electrodes are arranged such that they are parallel to each other.

3. A process according to claim 1, wherein said plurality of bar-shaped electrodes are arranged such that they are perpendicular to a direction the substrate is transported.

4. A process according to claim 1, wherein said plurality of bar-shaped electrodes are arranged such that their intervals to the substrate are greater where the depositing begins on the substrate and smaller where the depositing has progressed on the substrate.

5. A process according to claim 1, wherein said plurality of bar-shaped electrodes are arranged such that their intervals to the substrate alternate in a periodic arrangement in a direction the substrate is transported.