Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter
First Claim
1. A method for introducing a pre-selected amount, and type, of strain into the quantum wells of a pre-grown crystalline semiconductor material, said method comprising the steps of:
- providing a member formed of said crystalline semiconductor material, said member having an upper surface and defining multiple quantum wells; and
depositing at least one thin film layer on said upper surface of said member, said at least one thin film layer containing a pre-selected amount, and type, of strain, said type of strain in said at least one thin film layer being the opposite type to that desired to be introduced into said member.
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Abstract
A method is provided for fabricating microelectromechanically tunable vertical-cavity surface-emitting lasers and microelectromechanically tunable Fabry-Perot filters with precise lateral and vertical dimensional control. Strained reflective dielectric film(s) are applied to a multiple quantum well structure to electronically band-gap-engineer the quantum wells. Appropriate strain in the reflective dielectric film layers is also used to create appropriate curvature in one of the reflective dielectric film stacks so as to form a confocal cavity between a planar reflective dielectric film layer and the curved reflective dielectric film layer in the vertical cavity surface emitting laser or filter. Microelectromechanical tunable vertical cavity surface emitting lasers and filter structures are also provided which include a suspended membrane structure made of a dielectric/metal membrane or metal film that supports a cavity-tuning reflective dielectric film stack while being anchored at the perimeter by metal support post(s). Precise air-cavity length and lateral dimensions are achieved by micro-die-casting using a micro-machined sacrificial polyimide or aluminum disk. Further, tuning is achieved by translational movement of the cavity-tuning reflective dielectric film stack in a controlled electrostatic field.
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Citations
21 Claims
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1. A method for introducing a pre-selected amount, and type, of strain into the quantum wells of a pre-grown crystalline semiconductor material, said method comprising the steps of:
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providing a member formed of said crystalline semiconductor material, said member having an upper surface and defining multiple quantum wells; and
depositing at least one thin film layer on said upper surface of said member, said at least one thin film layer containing a pre-selected amount, and type, of strain, said type of strain in said at least one thin film layer being the opposite type to that desired to be introduced into said member. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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Specification