Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same

• US 6,645,830 B2
• Filed: 03/07/2002
• Issued: 11/11/2003
• Est. Priority Date: 08/27/1996
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Inoue, Satoshi, Shimoda, Tatsuya, Miyazawa, Wakao
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Brewster, William M.
• Application Number:
  US10/091,562
• Publication Number:
  US 20020146893A1
• Time in Patent Office: 614 Days
• Field of Search: 438/455, 438/456, 438/458, 438/464
• US Class Current: 438/455
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13613 the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence

Abstract

A method for transferring a thin film device on a substrate onto a transfer member, includes a step for forming a separation layer on the substrate, a step for forming a transferred layer including the thin film device on the separation layer, a step for adhering the transferred layer including the thin film device to the transfer member with an adhesive layer therebetween, a step for irradiating the separation layer with light so as to form internal and/or interfacial exfoliation of the separation layer, and a step for detaching the substrate from the separation layer.

Claims

1. A transferring method, comprising:

forming a separation layer over the substrate;

forming an interlayer over the separation layer;

forming a transferred layer on the interlayer;

joining a transfer member to the transferred layer; and

causing exfoliation at at least one of the separation layer and an interface between the separation layer and the substrate, the transferred layer being transferred to the transfer member.

2. The transferring method according to claim 1, the interlayer comprising a material selected from the group consisting of a silicon oxide, a metal and alloy including at least one of Pt, Au, W, Ta, Mo, Al, Cr and Ti.

3. The transferring method according to claim 2, separation layer including an amorphous silicon, and the interlayer including a silicon oxide.

4. The transferring method according to claim 2, the transferred layer including PZT, and the interlayer including a metal.

5. The transferring method according to claim 4, the interlayer including a metal selected from the group consisting of Pt, Au, W, Ta, Mo, Al, Cr, Ti and an alloy thereof.

6. The transferring method according to claim 1, the interlayer being at least one of a protective layer chemically or physically protecting the transferred layer, an insulating layer, a conductive layer, shading layer, a barrier layer prohibiting migration of components to or from the transferred layer and a reflection layer.

7. The transferring method according to claim 1, the thickness of the interlayer being between 10 nm and 5 μ

m.

8. The transferring method according to claim 1, further comprising forming an adhesive layer over the transferred layer to join the transferred layer with the transfer member.

9. The transferring method according to claim 8, the adhesive layer comprising an adhesive selected from the group consisting of a curable adhesive, a reactive curing adhesive, a photo-setting adhesive, a heat-hardening adhesive, a UV-curing adhesive and an anaerobic adhesive.

10. The transferring method according to claim 8, the substrate having transparency, and being illuminated from the substrate side to harden the adhesive.

11. The transferring method according to claim 8, the transfer member having transparency, and being illuminated from the transfer member to harden the adhesive.

12. The transferring method according to claim 1, the transferred layer comprising at least one of a thin film semiconductor device including a thin film transistor and a thin film diode, an electrode, a photovoltaic device, an actuator, micro-magnetic device, an optical thin film, a superconducting thin film and a multi-layered thin film.

13. The transferring method according to claim 1, further comprising depositing a silicon layer on the interlayer to form a thin film transistor.

14. A method for manufacturing an active matrix substrate, comprising:

forming a separation layer over the substrate;

forming an interlayer over the separation layer;

forming a transferred layer including a plurality of thin film transistors on the interlayer;

joining a transfer member, which is supposed to be the active matrix substrate, to the a transferred layer; and

causing exfoliation at at least one of the separation layer and an interface between the separation layer and the substrate, such that the thin film transistors are transferred to the transfer member.

15. The method for manufacturing an active matrix substrate according to claim 14, the active matrix substrate comprising a pixel portion and a driver portion, at least one of which having the transistor.