Integrated circuit device

• US 6,646,289 B1
• Filed: 09/22/2000
• Issued: 11/11/2003
• Est. Priority Date: 02/06/1998
• Status: Expired due to Term

• Current Assignee: Adeia Semiconductor Technologies LLC (f/k/a Invensas Corporation) (Adeia Inc.)
• Original Assignee: Shellcase Ltd. (Adeia Inc.)
• Inventors: Badehi, Avner
• Primary Examiner(s): Graybill, David E.
• Application Number:
  US09/601,895
• Time in Patent Office: 1,145 Days
• Field of Search: 257/81, 257/98, 257/99, 257/225, 257/228, 257/294, 257/323, 257/432, 257/434, 257/447, 257/448, 257/460, 257/466, 257/680, 257/681, 438/27, 438/29, 438/33, 438/38, 438/61, 438/65, 438/68-72, 438/113, 438/114, 438/116, 438/125, 438/464, 438/465, 438/763, 438/780, 438/928, 438/956, 438/958, 438/978
• US Class Current: 257/81
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/82 to produce devices, e.g. integrated circuits, each consisting of a plurality of components
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 24/02 Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 25/105 the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01051 : Antimony [Sb]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 31/02002 : Arrangements for conducting electric current to or from the device in operations
• CPC Class Codes: H01L 31/0203 : Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 31/02164 : for shielding light, e.g. light blocking layers, cold shields for infrared detectors
• CPC Class Codes: H01L 31/02327 : the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/125 : Composite devices with photosensitive elements and electroluminescent elements within one single body
• CPC Class Codes: H01L 31/186 : Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
• CPC Class Codes: H01L 33/0095 : Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/44 : characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/483 : Containers
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/52 : Encapsulations
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An integrally packaged optronic integrated circuit device (310) including an integrated circuit die (322) containing at least one of a radiation emitter and radiation receiver and having top and bottom surfaces formed of electrically insulative and mechanically protective material, at least one of the surfaces (317) being transparent to radiation, and electrically insulative edge surfaces (314) having pads.

Claims

1. An integrally packaged optronic integrated circuit device including:

an integrated circuit die containing;

at least one of a radiation emitter and radiation receiver, said integrated circuit die having top and bottom surfaces formed of electrically insulative and mechanically protective material, at least one of the surfaces being transparent to radiation; and

electrically insulative edge surfaces having pads,

the pads comprising contacts extending onto said at least one of the top and bottom surfaces.

2. An integrally packaged optronic integrated circuit device according to claim 1 and also including at least one spectral filter associated with a radiation transparent protective surface thereof.

3. An integrally packaged optronic integrated circuit device according to claim 1 and also including color array filters.

4. An integrally packaged optronic integrated circuit device according to claim 1 and also having lenses integrally formed on a transparent protective surface thereof.

5. An integrally packaged optronic integrated circuit device according to claim 1 and also including light coupling bumps formed on a transparent protective surface thereof.

6. An integrally packaged optronic integrated circuit device according to claim 1 and also including a waveguide and other optical components integrally formed on a transparent protective surface thereof.

7. An integrally packaged optronic integrated circuit device according to claim 1 and also including an optical grating formed onto a transparent protective surface thereof.

8. An integrally packaged optronic integrated circuit device according to claim 1 and also including a polarizer integrated therewith.

9. An integrally packaged optronic integrated circuit device according to claim 1, the integrated circuit die having a plurality of dimensions including a longest dimension of the die, said integrally packaged optronic integrated circuit device having a plurality of dimensions including a longest dimension of the device, wherein the longest dimension of the device does not exceed the longest dimension of the die by more than 20%.

10. An integrally packaged optronic integrated circuit device according to claim 9 and being characterized in that the longest dimension of the device does not exceed the longest dimension of the die by more than 10%.

11. An integrally packaged optronic integrated circuit device according to claim 9 and being characterized in that the longest dimension of the device does not exceed the longest dimension of the die by more than 5%.

12. An integrally packaged optronic integrated circuit device according to claim 4 and wherein said lenses are formed of the same material as that of the transparent protective surface.

13. An integrally packaged optronic integrated circuit device according to claim 4 and wherein said lenses are not formed of the same material as that of the transparent protective surface.

14. An integrally packaged optronic integrated circuit device according to claim 4 and wherein said lenses are formed on an outer facing surface of the transparent protective surface.

15. An integrally packaged optronic integrated circuit device according to claim 4 and wherein said lenses are formed on an inner facing surface of the transparent protective surface.

16. An integrally packaged optronic integrated circuit device according to claim 1 and wherein said circuit device is formed with an octagonal shape.

18. An integrally packaged optronic integrated circuit device according to claim 12 wherein said lenses are formed on an outer facing surface of the transparent protective surface.

19. An integrally packaged optronic integrated circuit device according to claim 13 and wherein said lenses are formed on an outer facing surface of the transparent protective surface.

20. An integrally packaged optronic integrated circuit device according to claim 12 and wherein said lenses are formed on an inner facing surface of the transparent protective surface.

21. An integrally packaged optronic integrated circuit device according to claim 13 and wherein said lenses are formed on an inner facing surface of the transparent protective surface.

22. An integrally packaged optronic integrated circuit device according to claim 9 and wherein said circuit device is formed with an octagonal shape.

23. A device according to claim 1, wherein the contacts extend onto a surface, wherein said surface faces away from an integrated circuit surface on which optronic components are formed.

17. A method for producing an integrally packaged optronic integrated surface device comprising the steps of:

forming electrical circuits onto a semiconductor wafer;

forming at least one transparent mechanical protective layer onto said semiconductor wafer over said electrical circuits;

forming solderable contacts onto said semiconductor wafer; and

thereafter, dicing said wafer into individual packages dies,

wherein said mechanical protective layer comprises at least one planar surface and wherein said step of forming at least one transparent mechanical protective layer comprises providing contacts extending onto the at least one planar surface.