Semiconductor light emitting device and method
First Claim
Patent Images
1. A light-emitting device, comprising:
- a semiconductor structure formed on one side of a substrate, said semiconductor structure having a plurality of semiconductor layers and an active region within said layers; and
first and second conductive electrodes contacting respectively different semiconductor layers of said structure on said one side of said substrate;
said substrate comprising a material having a refractive index n>
2.0 and light absorption coefficient α
, at the emission wavelength of said active region, of α
<
3 cm−
1.
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Abstract
A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contacting respectively different semiconductor layers of the structure; the substrate comprising a material having a refractive index n>2.0 and light absorption coefficient α, at the emission wavelength of the active region, of α>3 cm−1. In a preferred embodiment, the substrate material has a refractive index n>2.3, and the light absorption coefficient, α, of the substrate material is α<1 cm−1.
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Citations
30 Claims
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1. A light-emitting device, comprising:
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a semiconductor structure formed on one side of a substrate, said semiconductor structure having a plurality of semiconductor layers and an active region within said layers; and
first and second conductive electrodes contacting respectively different semiconductor layers of said structure on said one side of said substrate;
said substrate comprising a material having a refractive index n>
2.0 and light absorption coefficient α
, at the emission wavelength of said active region, of α
<
3 cm−
1.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A light emitting device, comprising:
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a semiconductor structure formed on one side of a substrate, said structure having a plurality of semiconductor layers and an active region within said layers, said plurality of layers including an n-type layer of a III-nitride semiconductor and a p-type layer of III-nitride semiconductor on opposing sides of said active region;
first and second conductive electrodes respectively contacting said n-type layer and said p-type layer; and
means for applying electric signals across said electrodes to produce light at said active region, the majority of said light being emitted from said device via said substrate;
said substrate comprising a material having a refractive index n>
2.0 and light absorption coefficient α
, at the emission wavelength of said active region, of α
<
3 cm−
1.- View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A light emitting device, comprising:
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a semiconductor structure formed on one side of a substrate, said structure having a plurality of semiconductor layers and an active region within said layers, said plurality of layers including an n-type layer of a III-nitride semiconductor and a p-type layer of III-nitride semiconductor on opposing sides of said active region;
first and second conductive electrodes respectively contacting said n-type layer and said p-type layer; and
means for applying electric signals across said electrodes to produce light at said active region, the majority of said light being emitted from said device via said substrate;
said substrate comprising polycrystalline silicon carbide. - View Dependent Claims (30)
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Specification