Strain gauge strip and applications thereof

• US 6,647,797 B2
• Filed: 05/29/2002
• Issued: 11/18/2003
• Est. Priority Date: 11/06/1997
• Status: Expired due to Fees

• Current Assignee: Powerco Spa (Renantis SpA)
• Original Assignee: Powerco Spa (Renantis SpA)
• Inventors: Miodushevsky, Pavel
• Primary Examiner(s): NOORI, MAX H
• Application Number:
  US10/158,552
• Publication Number:
  US 20030061884A1
• Time in Patent Office: 538 Days
• Field of Search: 737/74, 737/75, 737/77, 737/63, 737/68, 737/95, 338/2, 338/5
• US Class Current: 73/774
• CPC Class Codes: G01L 1/2243 the supports being parallelogram-shaped
• CPC Class Codes: G01L 1/2293 of the semi-conductor type semi-conductor devices controllable by variations of applied mechanical force H01L29/84
• CPC Class Codes: G01L 25/00 Testing or calibrating of apparatus for measuring force, torque, work, mechanical power, or mechanical efficiency
• CPC Class Codes: G01L 27/002 Calibrating, i.e. establishing true relation between transducer output value and value to be measured, zeroing, linearising or span error determination

Abstract

A strain gauge strip (10a) of the type that can be mechanically applied to a support (1) subject to deformation, is made of Samarium sulphide and provides optimum performance in terms of precision and sensitivity, without being affected by temperature and covering a wide range of deformations that are well suited to commercial application (FIG. 1).

Claims

1. A sensitive electric strain gauge element for measuring instruments, comprising one or more strain gauge strips made of semiconductor material, connected to an elastically deformable support and electrically connected to one another to generate an electric signal corresponding to said force, said electric strain gauge further comprising an insulating layer located between the support and the strain gauge strips, wherein said semiconductor material is Samarium sulphide SmS_X with X in a range 0.92≦

X≦

0.98, such that causing a change of material resistance under strain, and providing a substantially constant value of gauge factor for an extremely wide interval of strains, and further providing for a low sensitivity to temperature change.

2. The sensitive element according to claim 1, where X is approximately equal to 0.965.

3. The sensitive element according to claim 2, wherein said one or more strain gauge strips have a thickness between 0.01 μ

m and 0.05 μ

m.

4. The sensitive element according to claim 3, wherein said thickness is approximately 0.02 μ

m.

5. The sensitive element according to claim 1, comprising a two-layer protection deposited onto said one or more strain gauge strips.

6. The sensitive element according to claim 5, wherein said two-layer protection comprises a first layer made of SiO and a second layer made of a polymer.

7. The sensitive element according to claim 6, wherein said SiO layer is deposited by thermal evaporation to a thickness of about 5 μ

m.

8. The sensitive element according to claim 6, wherein said polymer layer is made of parylene.

9. The sensitive element according to claim 1, wherein said one or more strain gauge strips are made of policrystalline samarium sulphide.

10. The sensitive element according to claim 1, wherein said one or more strain gauge strips are made of monocrystalline samarium sulphide.

11. The sensitive element according to claim 1, which has four strain gauge strips electrically assembled to form a first Wheatstone bridge arrangement and which comprises a second Wheatstone bridge arrangement having shoulders, wherein said first Wheatstone bridge arrangement is one of said shoulders and the other of said shoulders are resistors having the same value of resistance of the first Wheatstone bridge arrangement, providing that an excitation unit is connected to the free ends of one diagonal of the second Wheatstone bridge arrangement, a load or pressure sensitive channel is connected to the free diagonal of the first Wheatstone bridge arrangement and a temperature sensitive channel is connected to the free ends of the other diagonal of the second Wheatstone arrangement.

12. The sensitive element according to claim 1, wherein said insulating layer is made of SiO.

13. The sensitive element according to claim 12, wherein the SiO is deposited by means of a chemical vapour deposition process.

14. The sensitive element according to claim 1, comprising a plurality of strain gauge strips electrically connected to one another to generate an electrical signal corresponding to a force applied to said element, wherein the strain gauge strips are electrically assembled by means of conductor strips formed by means of Nickel and Cobalt deposition.

15. The sensitive element according to claim 1, wherein said support has a mechanical axis of deformation and said strain gauge strips are arranged in such a way that their electrical axis coincides with the mechanical axis of deformation of the support.

16. A method for manufacturing a sensitive element according to claim 1, comprising the steps of:

polishing the support so that its surface roughness is less than 0.5 μ

m;

depositing a SiO insulating layer onto the support while maintaining the latter at a constant temperature up to reaching a thickness of about 5 μ

m;

depositing one or more strain gauge strips made of samarium sulphide SmS_X under decreased temperatures on the support having the SiO isolation layer; and

depositing one or more conducting strips contacting said one or more strain gauge strips.

17. The method of claim 16, wherein said constant temperature when depositing the SiO insulating layer is approximately 450°

C.

18. The method of claim 16, wherein said step of depositing the SiO insulating layer provides a deposition velocity of about 5.5 nm/s.

19. The method of claim 16, comprising a further step of depositing a two-layer protection onto said one or more strain gauge strips.

20. The method of claim 16, comprising a further step of applying a thermal conditioning treatment at a temperature in a range between about 150°

C. and about 200°

C.

21. A process for calibration of the sensitive element according to claim 16, which comprises the following operations:

applying a calibration force to said measurement instrument;

observing the electrical signal generated;

causing, in one or more of said strain gauge strips, a change in phase from a substantially crystalline phase to a substantially metallic phase, by exerting a pre-determined pressure on a localised section of said one or more strain gauge strips, said localised section having a size and position determined by the difference between said electrical signal generated and a reference signal.

22. The calibration process according to claim 21, wherein said predetermined pressure has a value not exceeding 30 kbar.

23. The calibration process according to claim 22, wherein said predetermined pressure is exerted by rubbing.

24. The calibration according to claim 21, wherein, when said predetermined pressure is exerted, the thickness of the strain gauge strip is reduced in said localised section until it is 10% of the original thickness.

25. The calibration process according to claim 24, wherein, when said predetermined pressure is exerted, the colour of the strain gauge strip is changed from golden to dark brown in said localised section.

26. The calibration according to claim 24, wherein said operations are performed in controlled temperature conditions.

27. Scale comprising a load cell, capable of receiving objects to be weighed, mechanically connected to one or more sensitive elements according to claim 1.