Method and apparatus for measuring etch uniformity of a semiconductor wafer

• US 6,649,075 B1
• Filed: 07/23/1996
• Issued: 11/18/2003
• Est. Priority Date: 07/23/1996
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Poslavsky, Leonid, Lewis, Jennifer, Buie, Melisa J.
• Primary Examiner(s): CHANG, CELIA C
• Application Number:
  US08/686,229
• Time in Patent Office: 2,674 Days
• Field of Search: 216/59, 216/60, 216/61, 438/706, 438/710, 438/711, 438/712
• US Class Current: 216/59
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32972 Spectral analysis
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

A method and apparatus for performing in situ measurement of etch uniformity within a semiconductor wafer processing system. Specifically, the apparatus and concomitant method analyzes optical emission spectroscopy (OES) data produced by an OES system. The analysis computes the first derivative of the OES data as the data is acquired. When the data meets a particular trigger criterion, the value of the first derivative is correlated with a particular uniformity value. As such, the system produces a uniformity value for a semiconductor wafer using an in situ measurement technique.

Claims

1. A method for measuring uniformity of a surface of a wafer as a result of an etching process comprising the steps of:

acquiring data indicating etch progression, wherein said data represents an intensity of an emission at a monitored wavelength of light;

defining a trigger criterion corresponding to a particular value of said data to form a trigger point;

producing, as said data is acquired, a first derivative of said data as a first derivative value, wherein said first derivative value is produced by $\frac{X_2-X_1}{\mathrm{\Delta <br><br>}<br><br>\text{\hspace{1em}<br><br>}<br><br>T}$

where X₁ is a data point in said data, and X₂ is a data point and Δ

T is a time duration elapsed between acquisition of the and data points, said trigger criterion is a peak of said first derivative; and

generating, when said trigger criterion is attained by said data, a uniformity value representing the uniformity of the surface of the wafer by directly correlating said first derivative value to said uniformity value.

2. The method of claim 1 wherein said trigger criterion is a value of said data that represent when an endpoint to an etching process has been attained.

3. The method of claim 1 wherein said trigger criterion is an inflection point in a curve representing said data.

4. The method of claim 1 wherein said generating step comprises the steps of:

addressing a look up table using said first derivative value, where said look up table contains uniformity values correlating to first derivative values; and

producing a particular uniformity value in response to said first derivative value at said trigger point.

5. The method of claim 1 wherein said generating step comprises the step of computing a particular uniformity value that corresponds to said first derivative value at said trigger point, where said particular uniformity is computed using a correlation equation that produces uniformity values corresponding to first derivative values.

6. The method of claim 1 further comprising the step of responding to said uniformity value.