Thin film capillary process and apparatus

• US 6,649,078 B2
• Filed: 12/06/2000
• Issued: 11/18/2003
• Est. Priority Date: 12/06/2000
• Status: Expired due to Fees

• Current Assignee: Lawrence Livermore National Security LLC (Government of the United States of America)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Yu, Conrad M.
• Primary Examiner(s): Warden, Jill
• Assistant Examiner(s): Handy, Dwayne K
• Application Number:
  US09/732,004
• Publication Number:
  US 20030029723A1
• Time in Patent Office: 1,077 Days
• Field of Search: 422/99, 422/100, 422/102, 422/129, 422/130, 422/131, 204/400, 204/193, 435/283.1, 435/287.1, 435/288.3, 435/288.4, 435/288.5, 216/95, 216/96, 216/97, 216/99, 216/100
• US Class Current: 216/96
• CPC Class Codes: B01L 2200/12 Specific details about manufacturing devices
• CPC Class Codes: B01L 3/502707 characterised by the manufacture of the container or its components by shaping or joining plastic parts B29C59/00, B29C65/00; by laminating B32B37/00; manufacture of microstructural devices in general B81C
• CPC Class Codes: B81B 2201/058 Microfluidics not provided for in B81B2201/051 - B81B2201/054
• CPC Class Codes: B81B 2203/0376 rounded profile
• CPC Class Codes: B81C 1/00071 Channels

Abstract

Method and system of forming microfluidic capillaries in a variety of substrate materials. A first layer of a material such as silicon dioxide is applied to a channel etched in substrate. A second, sacrificial layer of a material such as a polymer is deposited on the first layer. A third layer which may be of the same material as the first layer is placed on the second layer. The sacrificial layer is removed to form a smooth walled capillary in the substrate.

Claims

1. A method for the formation of micirofluidic capillaries, comprising:

depositing a photoresist layer on a surface of a substrate,

carrying out photolithography procedures to form images on the photoresist layer,

etching the photoresist layer to form at least one channel therein,

etching the substrate to form at least one channel therein,

removing the photoresist layer,

depositing a first layer over the substrate and to line the surfaces of the at least one channel formed therein,

depositing a second layer over the first layer carrying out photolithography procedures on the second layer,

removing the second layer and first layer from the substrate except in the at least one channel region,

planarizing the substrate by reflowing the second layer material located in the channel,

polishing the substrate to form a flat surface thereon,

depositing a third layer on the substrate surface and over the at least one channel,

removing the remaining second layer material in the at least one channel located beneath the third layer to form at least one channel in the substrate lined with said first layer material.

2. The method of claim 1, additionally including removing the substrate from about the at least one lined channel.

3. The method of claim 1, wherein carrying out the photolithograph procedures is carried out by forming the photoresist layer using a positive photoresist layer and a beam of light directed thereon.

4. The method of claim 1, additionally providing the substrate of a material selected from the group consisting of glass, quartz, pyrex, silicon, polysilicon, gallium arsenide, and polymeric materials.

5. The method of claim 1, wherein etching the photoresist layer is carried out by isotropically etching.

6. The method of claim 1, wherein etching the substrate is to form the at least one channel with a width in the range of 5-50 microns and depth of 5-50 microns.

7. The method of claim 1, wherein depositing the first layer is carried out using a technique selected from the group consisting of electron sputtering, E-beam coating, and chemical vapor deposition.

8. The method of claim 1, wherein depositing the first layer is carried out using materials selected from the group consisting of glass, quartz, polysilicon, silicon nitride, silicon dioxide, boron nitride, and metals.

9. The method of claim 8, wherein the material of the first layer is a silicon dioxide with a melting temperature greater than 1000 degrees Celsius.

10. The method of claim 1, wherein depositing the second layer is carried out using a polymer having a melting point temperature in the range of 200-300 degrees Celsius.

11. The method of claim 1, wherein depositing the second layer is carried out using an oxide with a melting point in the range of 200-250 degrees Celsius.

12. The method of claim 1, wherein the at least one channel formed in the substrate formed so as to have a finished wall surface roughness in the range of 40-60 root mean square (rms).

13. The method of claim 1, wherein carrying out the photolithography procedures on the second layer is carried out using a negative photoresist.

14. The method of claim 1, wherein polishing the substrate is carried out using a chemical mechanical polish.

15. The method of claim 1, wherein depositing the third layer is carried out using similar or the same material as that of the first layer and having a melting point greater than 1000 degrees Celsius.

16. The method of claim 1, wherein depositing the third layer is carried out so as to cover the whole surface of the substrate and the at least one channel therein so as to produce an integral mass.

17. The method of claim 1, wherein depositing the third layer is carried out by a technique selected from the group consisting of electron sputtering, E-beam coating, and chemical vapor deposition.

18. The method of claim 1, wherein removing the remaining second layer material is carried out by a heating and melting process.