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Method of manufacturing high-power light emitting diodes

  • US 6,649,437 B1
  • Filed: 08/20/2002
  • Issued: 11/18/2003
  • Est. Priority Date: 08/20/2002
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing high efficiency light emitting diodes, comprising the steps of:

  • preparing a light emitting double hetero structure formed on a device substrate, said double hetero structure having an upper cladding layer, an active layer and a lower cladding layer stacked on said device substrate;

    coating a plurality of ohmic metal contacts on said upper cladding layer;

    covering said plurality of ohmic metal contacts and said upper cladding layer with a diffusion barrier layer;

    forming a metal reflection layer on said diffusion barrier layer. electroplating a metal substrate layer on said metal reflection layer;

    removing said device substrate to expose said lower cladding layer; and

    forming at least one ohmic contact electrode on said lower cladding layer.

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