Method of manufacturing high-power light emitting diodes
First Claim
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1. A method of manufacturing high efficiency light emitting diodes, comprising the steps of:
- preparing a light emitting double hetero structure formed on a device substrate, said double hetero structure having an upper cladding layer, an active layer and a lower cladding layer stacked on said device substrate;
coating a plurality of ohmic metal contacts on said upper cladding layer;
covering said plurality of ohmic metal contacts and said upper cladding layer with a diffusion barrier layer;
forming a metal reflection layer on said diffusion barrier layer. electroplating a metal substrate layer on said metal reflection layer;
removing said device substrate to expose said lower cladding layer; and
forming at least one ohmic contact electrode on said lower cladding layer.
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Abstract
The present invention is related to a method of manufacturing high efficiency LEDs. The LEDs uses a metal reflection layer to solve the problem of light absorption by the substrate, and improves the illumination. It also forms a vertical structure where the P and N ends are on the top and bottom sides of the LEDs, respectively. A vertical structure is easier for final packaging. In addition, the present invention uses a metal substrate to replace the semiconductor substrate in order to improve the heat dissipation, and enable the LEDs to operate at a higher current.
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Citations
4 Claims
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1. A method of manufacturing high efficiency light emitting diodes, comprising the steps of:
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preparing a light emitting double hetero structure formed on a device substrate, said double hetero structure having an upper cladding layer, an active layer and a lower cladding layer stacked on said device substrate;
coating a plurality of ohmic metal contacts on said upper cladding layer;
covering said plurality of ohmic metal contacts and said upper cladding layer with a diffusion barrier layer;
forming a metal reflection layer on said diffusion barrier layer. electroplating a metal substrate layer on said metal reflection layer;
removing said device substrate to expose said lower cladding layer; and
forming at least one ohmic contact electrode on said lower cladding layer. - View Dependent Claims (2, 3, 4)
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Specification
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Current AssigneeUnited Epitaxy Company, Ltd. (Ennostar, Inc.)
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Original AssigneeUnited Epitaxy Company, Ltd. (Ennostar, Inc.)
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InventorsYang, Kuang-Neng, Chang, Chih-Sung, Chen, Tzer-Perng
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Primary Examiner(s)Smith, Matthew
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Assistant Examiner(s)ROCCHEGIANI, RENZO
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Application NumberUS10/224,980Time in Patent Office455 DaysField of Search438/22, 438/27, 438/29, 438/30, 257/79, 257/81, 257/82, 257/91, 257/98, 257/99, 349/113, 349/114, 349/115, 349/122, 349/142US Class Current438/30CPC Class CodesH01L 33/387 with a plurality of electro...H01L 33/405 Reflective materials
