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Structure and method for wafer comprising dielectric and semiconductor

  • US 6,649,451 B1
  • Filed: 02/02/2001
  • Issued: 11/18/2003
  • Est. Priority Date: 02/02/2001
  • Status: Expired due to Fees
First Claim
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1. A method for forming semiconductor regions and dielectric regions, comprising:

  • depositing and patterning a layer of semiconductor on a wafer to form the semiconductor regions which each have an upper surface;

    depositing a layer of dielectric on top of the semiconductor regions, wherein the dielectric layer fills up to no more than 600 angstroms above the upper surface of the semiconductor regions in between the semiconductor regions; and

    removing a portion of the dielectric layer using chemical mechanical planarization so that the upper surface of each of the semiconductor regions is exposed.

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