Semiconductor optical amplifier

• US 6,649,938 B1
• Filed: 09/11/2000
• Issued: 11/18/2003
• Est. Priority Date: 03/12/1998
• Status: Expired due to Fees

• Current Assignee: D-Led Corporation
• Original Assignee: D-Led Corporation
• Inventors: Bogatov, Alexandr P., Shveikin, Vasily I., Drakin, Alexandr E., Kurnyavko, Juri V
• Primary Examiner(s): Tran, Minh Loan
• Application Number:
  US09/658,642
• Time in Patent Office: 1,163 Days
• Field of Search: 359/344, 372/43, 372/45, 372/46, 372/50, 372/49, 257/95, 257/96, 257/98, 257/101, 257/103
• US Class Current: 257/95
• CPC Class Codes: H01S 5/1064 varying width along the optical axis
• CPC Class Codes: H01S 5/1085 Oblique facets
• CPC Class Codes: H01S 5/50 Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Abstract

A semiconductor optical amplifier includes a master source of input radiation, an amplifying component optically coupled to the master source. The amplifying component includes a semiconductor heterostructure that includes an active layer positioned between two cladding layers and an ohmic contact formed to at least one sublayer of the semiconductor heterostructure. The amplifying component also includes an input-output region for radiation that comprises at least one additional layer on at least one side of the heterostructure. This additional layer adjacent to the heterostructure comprises one or more sublayers having refractive indices n_IORq and optical loss factors α_IORq (cm⁻¹) selected to provide for enhanced output power and a reduced angle of divergence.

Claims

1. A semiconductor optical amplifier comprising:

a master source of input radiation; and

an amplifying component optically coupled to said master source, said amplifying component comprising

a semiconductor heterostructure that includes an active layer positioned between two cladding layers;

an ohmic contact formed to at least one sublayer of said semiconductor heterostructure; and

an input-output region for radiation to which it is transparent comprising at least one additional layer on at least one side of said heterostructure, said additional layer adjacent to said heterostructure comprising one or more sublayers having refractive indices n_IORq and optical loss factors α

_IORq (cm<sup>−

1</sup>), where q=1, 2, . . . , p are integers corresponding to said sublayers of said radiation input-output region sequentially counted from their boundaries with said heterostructure,

wherein said semiconductor optical amplifier is adapted such that said input-output region receives input radiation at an angle of input, δ

, said angle of said input radiation and said net loss factor α

_OR (cm<sup>−

1</sup>) for said amplified radiation flowing from said active layer are such that $0<<br><br>\arccos <br><br>\text{\hspace{1em}<br><br>}<br><br>\frac{n_{\mathrm{eff}}}{n_{\mathrm{IOR1}}}\le <br><br>\arccos <br><br>\text{\hspace{1em}<br><br>}<br><br>\frac{n_{\mathrm{eff}<br><br>\text{-}<br><br>\min }}{n_{\mathrm{IOR1}}},\mathrm{and}<br><br>\text{\hspace{1em}<br><br>}<br><br>n_{\mathrm{eff}<br><br>\text{-}<br><br>\min }><br><br>n_{\min },$

wherein n_eff is the effective refractive index n_eff of said heterostructure in aggregate with said radiation input-output region, and n_IOR1 is the refractive index of said radiation input-output region, n_eff-min is the minimum value of n_eff out of all possible n_eff for said multiplicity of heterostructures that are of practical interest, in aggregate with radiation input-output regions, and n_min is the smallest of said refractive indices of said layers of said heterostructure.

2. A semiconductor optical amplifier as in claim 1, wherein said input radiation entering said amplifier is substantially collimated.

3. A semiconductor optical amplifier as in claim 2, wherein said input angle δ

of said input radiation on an input surface of said amplifying component is such that radiation into said amplifying component is incident at an inflow angle ξ and

is emitted therefrom at an outflow angle φ

substantially equal to arccos(n_eff/n_IOR1), said inflow angle ξ

being defined by a normal of an input ingoing radiation front to a plane of said active layer and said outflow angle φ

, defined by a normal of outgoing amplified radiation with respect to said plane of said active layer.

4. A semiconductor optical amplifier as in claim 1, wherein said semiconductor heterostructure and said input-output region are selected such that said net loss factor α

_OR (cm<sup>−

1</sup>) for amplified radiation emerging from said active layer at said boundary between said sublayer of said cladding layer and said radiation input-output region is selected from a range of values bounded by a lower limit α

_ORmin (cm<sup>−

1</sup>) and an upper limit α

_ORmax (cm<sup>−

1</sup>) established by a permissible minimum value of efficiency of conversion of electric power supplied to said active gain region into amplified radiation power and also by a maximum permissible value of said operating-current density.

5. A semiconductor optical amplifier as in claim 1, further comprising barrier regions, and

wherein said amplifying component comprises at least one active gain region having width W_in (μ m) at its start and a width W_out (μ

m) at its end and having a length L_AGR (μ

m) with first optical facets that serve as boundaries on face sides defining said start and end of said active gain region, and that are inclined at angles ψ

₁ and ψ

₂ with a normal plane perpendicular to a longitudinal axis extending said length L_AGR of said active layer.

6. A semiconductor optical amplifier as in claim 5, wherein W_in (μ

m) is substantially equal to W_out (μ

m).

7. A semiconductor optical amplifier as in claim 5, wherein W_out is larger than W_in.

8. A semiconductor optical amplifier as in claim 1, wherein said radiation input-output region has a width no smaller than said widths of said active gain region, and said radiation input-output region has an inner surface bordering said heterostructure of length L_IOR-I (μ

m) no shorter than said length L_AGR (μ

m) of said active region.

9. A semiconductor optical amplifier as in claim 1, wherein said radiation input-output region comprises optically homogeneous material.

10. A semiconductor optical amplifier as in claim 9, wherein said active layer comprises semiconductor having a bandgap E_a (eV) and said radiation input-output region comprises semiconductor having a bandgap E_IOR (eV) that exceeds said bandgap for said active layer E_a (eV) by more than 0.09 eV.

11. A semiconductor optical amplifier as in claim 1, wherein that said radiation input-output region has a thickness d_IOR between about 5 to 50,000 μ

m.

12. A semiconductor optical amplifier as in claim 1, wherein said active layer has a medial plane located at a distance from said inner surface of said additional layer such that said amplified radiation intensity in said medial plane differs from said maximum intensity by no more than 20%.

13. A semiconductor optical amplifier as in claim 1, wherein at least one of said sublayers of said cladding layers of said heterostructure has a refractive index equal to or greater than N_IOR1.

14. A semiconductor optical amplifier as in claim 1, wherein said heterostructure layer adjacent to said radiation input-output region comprises at least two regions whose bordering surfaces are perpendicular to a plane of parallel to said active layer.

15. A semiconductor optical amplifier as in claim 14, wherein said adjacent regions in said radiation input-output region have refractive indices that are different.

16. A semiconductor optical amplifier as in claim 14, wherein said adjacent regions have thicknesses that are different.

17. A semiconductor optical amplifier as in claim 1, wherein said outer additional layer comprises material that absorbs said radiation being amplified.

18. A semiconductor optical amplifier as in claim 1, wherein said additional layers are substantially electrically conductive.

19. A semiconductor optical amplifier as in claim 18, further comprising an ohmic contact formed with one of said additional layers.

20. A semiconductor optical amplifier as in claim 1, wherein said radiation input-output region is substantially electrically conductive.

21. A semiconductor optical amplifier as in claim 20, wherein in an ohmic contact is formed with said surface of said radiation input-output region.

22. A semiconductor optical amplifier as in claim 1, wherein said radiation input-output region has an optical loss factor α

_IROq that is not greater than 0.1 cm<sup>−

1</sup>.

23. A semiconductor optical amplifier as in claim 1, wherein said radiation input-output region comprises two sublayers, a first sublayer that borders on said laser heterostructure and is electrically conductive and a second layer that comprises material with an optical loss factor α

_IOR2 of no more than 0.1 cm<sup>−

1</sup>.

24. A semiconductor optical amplifier as in claim 23, further comprising an ohmic contact made with said first sublayer of said radiation input-output region.

25. A semiconductor optical amplifier as in claim 1, wherein at least one of said sublayers of said cladding layer is electrically conductive and is positioned between said active layer and said radiation input-output region, and wherein said optical amplifier further comprises an ohmic contact from said direction of said radiation input-output region made with one of said electrically conductive sublayers of said cladding layer that is positioned between said active layer and said radiation input-output region.

26. A semiconductor optical amplifier as in claim 25, wherein said ohmic contact is made with said electrically conductive layer having a bandgap value smaller than other of said electrically conductive layers.

27. A semiconductor optical amplifier as in claim 1, further comprising a second optical facet having an antireflective coating, said second optical facet being located in said radiation input-output region proximal to said radiation input and being oriented parallel to a normal plane perpendicular to a longitudinal axis extending a length L_AGR of said active layer, and wherein said radiation input angles δ

satisfies the condition arcsin (n_IORq sin ξ

).

28. A semiconductor optical amplifier as in claim 1,

further comprising an antireflective coating formed on a part of said radiation input-output region that is opposite an inner surface of said input-output region bordering said heterostructure, and that is adjacent to a second optical facet that receives said input radiation,

wherein said second optical facet subtends an obtuse angle with said plane of said active layer and is formed at an angle of inclination ψ

₃ to a normal plane perpendicular to said active layer ranging between about

29. A semiconductor optical amplifier as in claim 28, wherein said angle of inclination ψ

₃ is selected to be [(π

/4)−

(ξ

/2)], and said output radiation is directed along a normal to said input surface.

30. A semiconductor optical amplifier as in claim 1, further comprising

a second optical facet having an antireflective coating, said second optical facet being located on said radiation input-output region proximal to said input radiation,

wherein said second optical facet which subtends an acute angle with said plane of said active layer and is formed at an angle of inclination ψ

₃ to a normal plane perpendicular to said active layer ranging between about (ξ

−

σ

) to (ξ

+σ

).

31. A semiconductor optical amplifier as in claim 30, wherein said angle of inclination ψ

₃ is equal to an angle ξ

corresponding to radiation inflow into said heterostructure, and said output radiation is directed along a normal to said input surface.

32. A semiconductor optical amplifier as in claim 1, further comprising a second optical facet having an antireflective coating, said second optical facet being located on said radiation input-output region proximal to said output radiation,

wherein said second optical facet subtends an acute angle with said plane of said active layer and is formed at an angle of inclination ψ

₄ to a normal plane perpendicular to said active layer ranging between about (φ

−

σ

) to (φ

+σ

).

33. A semiconductor optical amplifier as in claim 32, wherein said angle of inclination ψ

₄ is equal to said outflow angle φ

corresponding to radiation outflow from said heterostructure.

34. A semiconductor optical amplifier as in claim 32, wherein said radiation input-output region comprises at least two subregions, said first of which is optically coupled to said master source, said subregions being separated by second optical facets for output of radiation from each subregion.

35. A semiconductor optical amplifier as in claim 34, wherein said second optical facets in said direction of radiation output subtend an acute angle with respect to a plane coincident with said active layer and are formed at an angle of inclination ψ

₄ with respect to a perpendicular to a surface of said active layer that ranges from about [(π

/4)+(φ

/2)−

(σ

/2)] to [(π

/4) +(φ

/2)+(σ

/2)], wherein said amplifying component further comprises antireflective coatings formed in said regions of their projections on a surface of said heterostructure opposite said location of said radiation input-output region.

36. A semiconductor optical amplifier as in claim 1, further comprising

a second optical facet having an antireflective coating, said second optical facet being located on said radiation input-output region proximal to said output radiation,

wherein said second optical facet is parallel to a normal plane perpendicular to said active layer, and

wherein said amplifier is adapted such that output radiation exits from said heterostructure at an outflow angle φ

that is smaller than the angle of total internal reflection σ

from said facet.

37. A semiconductor optical amplifier as in claim 1, further comprising

a reflective coating on a second optical facet, and one formed parallel to said normal plane;

and

an antireflective coating is made on another, opposite second optical facet,

wherein radiation input is provided through one part of said antireflection coating, which is located, at one end at a boundary of said second optical facet with an inner surface of said radiation input-output region adjacent said active layer, at a distance of no more than L_AGR tan φ

, and

wherein radiation output is provided through said same facet in another part thereof.

38. A semiconductor optical amplifier as in claim 37, comprising a reflective coating on said first optical facet adjacent said second optical facet with said reflective coating.

39. A semiconductor optical amplifier as in claim 1, further comprising an antireflective coating on a part of said radiation input-output region surface opposite an inner surface of said input-output region adjacent said active layer, said antireflective coating being positioned adjacent to said second optical facet from said direction of radiation output,

wherein said second optical facet subtends an obtuse angle with a plane parallel to said active layer and formed at an angle of inclination ψ

₄ with respect to a perpendicular to said active layer ranging from about [(π

/4)−

(φ

/2)−

(σ

/2)] to [(π

/4)−

(φ

/2)+(σ

/2)].

40. A semiconductor optical amplifier as in claim 39, wherein said angle of inclination ψ

₄ is selected to be [(π

/4)−

(φ

/2)], and said output radiation is directed along a normal to said output surface.

41. A semiconductor optical amplifier as in claim 1, further comprising at least two active gain regions having a substantially identical inflow angle ξ

and outflow angle φ

for each gain region formed on a same surface of said radiation input-output region.

42. A semiconductor optical amplifier as in claim 41, wherein at least two active gain regions are formed along a same line parallel to a surface of said radiation input-output region and to a plane of said active layer, with a spacing 2d_IOR/tan φ

between said edges of said active regions.

43. A semiconductor optical amplifier as in claim 41, wherein at least part of at least one surface of said radiation input-output region is reflective.

44. A semiconductor optical amplifier as in claim 43, wherein said radiation input-output region comprises reflective coatings.

45. A semiconductor optical amplifier as in claim 43, comprising reflectors associated with said radiation input-output region that comprise distributed Bragg reflectors.

46. A semiconductor optical amplifier as in claim 43, further comprising reflectors associated with said radiation input-output region comprising distributed feedback reflectors along an entire length of said active gain region of said master source.

47. A semiconductor optical amplifier as in claim 1, wherein at least one active gain region having an identical inflow angle ξ

and outflow angle φ

for each said active gain region, are on opposite surfaces of said radiation input-output region.

48. A semiconductor optical amplifier as in claim 47, wherein at least one active gain region is formed along each of two lines that are parallel to each other and that are located on opposite surfaces, said shortest distance between edges of said active gain regions on opposite sides being d_IOR/sin φ

.

49. A semiconductor optical amplifier as in claims 1, wherein said master source of input radiation comprises a second amplifying component.

50. A semiconductor optical amplifier as in claim 49, further comprising reflectors associated with said active gain region of said second amplifying component.

51. A semiconductor optical amplifier as in claim 1, further comprising an active gain region associated with said master source, said active gain layer being located on said radiation input-output region of said amplifying component, and said outflow angle φ

of said active gain region of said master source being identical to said inflow angle ξ

of said active gain region of said amplifying component.

52. A semiconductor optical amplifier as in claim 51, further comprising reflectors associated with said active gain region of said master source.

53. A semiconductor optical amplifier as in claim 51, wherein said active gain regions of said master source and amplifying component are located on a same inner surface of said radiation input-output region.

54. A semiconductor optical amplifier as in claim 53, wherein said active gain regions of said master source and amplifying component are located on a same line parallel to a surface of said radiation input-output region and to a plane of said active layer, with a spacing 2d_IOR/tan φ

between edges of said active regions.

55. A semiconductor optical amplifier as in claim 51, wherein said active gain regions of said master source and amplifying component are located on opposite surfaces of said radiation input-output region.

56. A semiconductor optical amplifier as in claim 55, wherein said active gain regions of said master source and amplifying component are located along each of two lines that are parallel to each other and that are located on opposite surfaces, said shortest distance between said edges of said active gain regions on opposite surfaces being d_IOR/sin φ

.