Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby
First Claim
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1. A semiconductor device, comprising:
- a conductive substrate;
at least one conductive island having a predetermined sidewall angle formed in said conductive substrate;
a dielectric material formed over said at least one island;
a conductive material formed over said dielectric material and at least a majority of said at least one conductive island; and
a first contact connected to said conductive material and a second contact connected to said conductive substrate.
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Abstract
A method of forming a semiconductor device, includes forming at least one conductive island having a predetermined sidewall angle in a conductive substrate, forming a dielectric material over the at least one island, forming a conductive material over the dielectric material, and forming a contact to the conductive material and the at least one island.
77 Citations
21 Claims
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1. A semiconductor device, comprising:
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a conductive substrate;
at least one conductive island having a predetermined sidewall angle formed in said conductive substrate;
a dielectric material formed over said at least one island;
a conductive material formed over said dielectric material and at least a majority of said at least one conductive island; and
a first contact connected to said conductive material and a second contact connected to said conductive substrate. - View Dependent Claims (2, 3)
wherein a spacing between adjacent islands of said plurality of islands is smaller than a width of an island. -
3. The device according to claim 1, wherein said at least one conductive island comprises a plurality of conductive islands, and
wherein said spacing between adjacent islands is formed smaller than a minimum lithographically patternable feature.
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4. A semiconductor device comprising:
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a conductive substrate comprising at least one conductive island having an angled sidewall;
a dielectric layer formed over said at least one conductive island, a conductive layer formed over said dielectric material and at least a majority of said at least one conductive island; and
a first contact connected to said conductive layer and a second contact connected to said conductive substrate. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 20, 21)
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19. A semiconductor capacitor comprising:
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a conductive substrate comprising at least one conductive island having an angled sidewall, said island forming a first plate of said capacitor;
a dielectric layer formed over said at least one conductive island;
a conductive layer formed over said dielectric layer and at least a majority of said at least one conductive island, said conductive layer forming a second plate of said capacitor; and
a first contact connected to said conductive layer and a second contact connected to said conductive substrate.
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Specification