×

Method for increasing a very-large-scale-integrated (VLSI) capacitor size on bulk silicon and silicon-on-insulator (SOI) wafers and structure formed thereby

  • US 6,649,959 B2
  • Filed: 11/30/2001
  • Issued: 11/18/2003
  • Est. Priority Date: 06/04/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a conductive substrate;

    at least one conductive island having a predetermined sidewall angle formed in said conductive substrate;

    a dielectric material formed over said at least one island;

    a conductive material formed over said dielectric material and at least a majority of said at least one conductive island; and

    a first contact connected to said conductive material and a second contact connected to said conductive substrate.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×