Semiconductor pressure sensor decreasing creep stress in <110> crystalline axis direction
First Claim
Patent Images
1. A semiconductor pressure sensor comprising:
- a rectangular semiconductor substrate having a (110) surface as a main surface;
a diaphragm formed on the main surface;
diffusion gauge resistors formed on the diaphragm for outputting a detection signal based on changes in resistance values thereof according to deformation of the diaphragm; and
metal wiring segments formed on the main surface of a thick portion of the substrate, which is a peripheral area of the diaphragm;
wherein, a ratio S/d is larger than 100, where an area of the diaphragm is S μ
m2 and a thickness thereof is d μ
m, a total area of the metal wiring segments arranged on first sides of the substrate is larger than a total area of the metal wiring segments arranged on second sides of the substrate, when the first sides indicate the sides in parallel with a <
110>
crystalline axis and the second sides indicate the sides in parallel with a <
100>
crystalline axis.
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Abstract
Metal wiring segments, which are located at peripheral positions of a diaphragm, are formed on a main surface of a thick portion of a semiconductor substrate. A ratio S/d is larger than 100, where an area of the diaphragm is S μm2 and a thickness thereof is d μm. Further, a total area of the metal wiring segments arranged on first sides of the substrate is larger than total area of the metal wiring segments arranged on second sides of the substrate, where the first sides indicate the sides in parallel with <110> crystalline axis and the second sides indicate the sides in parallel with <100> crystalline axis.
21 Citations
6 Claims
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1. A semiconductor pressure sensor comprising:
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a rectangular semiconductor substrate having a (110) surface as a main surface;
a diaphragm formed on the main surface;
diffusion gauge resistors formed on the diaphragm for outputting a detection signal based on changes in resistance values thereof according to deformation of the diaphragm; and
metal wiring segments formed on the main surface of a thick portion of the substrate, which is a peripheral area of the diaphragm;
wherein, a ratio S/d is larger than 100, where an area of the diaphragm is S μ
m2 and a thickness thereof is d μ
m,a total area of the metal wiring segments arranged on first sides of the substrate is larger than a total area of the metal wiring segments arranged on second sides of the substrate, when the first sides indicate the sides in parallel with a <
110>
crystalline axis and the second sides indicate the sides in parallel with a <
100>
crystalline axis.- View Dependent Claims (2, 3, 4)
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5. A semiconductor pressure sensor comprising:
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a rectangular semiconductor substrate having a (110) surface as a main surface, first sides in parallel with a <
110>
crystalline axis and second sides in parallel with a <
100>
crystalline axis;
a diaphragm formed on the main surface, wherein the substrate further has a thick portion formed around a periphery of the diaphragm;
diffusion gauge resistors formed on the diaphragm for outputting a detection signal based on changes in resistance values thereof according to deformation of the diaphragm; and
metal wiring segments formed on the thick portion of the substrate;
wherein, a ratio S/d is larger than 100 μ
m, where an area of the diaphragm is S μ
m2 and a thickness thereof is d μ
m,a total area of the metal wiring segments arranged closer to the first sides than the second sides is larger than a total area of the metal wiring segments arranged closer to the second sides than the first sides. - View Dependent Claims (6)
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Specification