Temperature sensing system with matched temperature coefficients of expansion
First Claim
1. A temperature sensitive system, comprising:
- an operating system which relies upon a temperature sensing capability, and a temperature sensitive structure connected to said operating system to provide said temperature sensing capability, said temperature sensitive structure comprising;
a die, an electrically conductive mounting layer on said die, and a temperature sensitive device comprising SiC, AlN and/or AlxGa1−
xN(x>
0.69) on said mounting layer, said mounting layer adhering said device to said die and having a temperature coefficient of expansion (TCE) within 1.00±
0.06 those of said die and device.
3 Assignments
0 Petitions
Accused Products
Abstract
A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1−xN(x>0.69) connected by electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer (which can be W, WC or W2C) have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. The device can be encapsulated with a reacted borosilicate mixture, with or without an upper die which helps to hold on lead wires and increases structural integrity. Applications include temperature sensors, pressure sensors, chemical sensors, and high temperature and high power electronic circuits.
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Citations
22 Claims
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1. A temperature sensitive system, comprising:
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an operating system which relies upon a temperature sensing capability, and a temperature sensitive structure connected to said operating system to provide said temperature sensing capability, said temperature sensitive structure comprising;
a die, an electrically conductive mounting layer on said die, and a temperature sensitive device comprising SiC, AlN and/or AlxGa1−
xN(x>
0.69) on said mounting layer,said mounting layer adhering said device to said die and having a temperature coefficient of expansion (TCE) within 1.00±
0.06 those of said die and device.- View Dependent Claims (2, 3, 4, 6, 8, 9, 10, 11, 12, 13, 14)
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5. A temperature sensitive system, comprising:
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an operating system which relies upon a temperature sensing capability, and a temperature sensitive structure connected to said operating system to provide said temperature sensing capability, said temperature sensitive structure comprising;
an AlN die, an electrically conductive mounting layer on said die, and a temperature sensitive device comprising SiC, AlN and/or AlxGa1−
xN(x>
0.69) on said mounting layer,said mounting layer adhering said device to said die and having a temperature coefficient of expansion (TCE) within 1.00±
0.06 those of said die and device, said mounting layer comprising a W, WC and/or W2C adhesive layer adhered to said die, and a metallization layer adhered to said adhesive layer and bonded to electrodes on said device, said metallization layer having a thermal coefficient of expansion not greater than about 3.5 times that of said adhesive layer over a temperature range of interest.
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7. A The temperature sensitive system, comprising:
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an operating system which relies upon a temperature sensing capability, and a temperature sensitive structure connected to said operating system to provide said temperature sensing capability, said temperature sensitive structure comprising;
an AlN die, an electrically conductive mounting layer on said die, said mounting layer comprising W, WC and/or W2C, a temperature sensitive device comprising SiC, AlN and/or AlxGa1−
xN(x>
0.69) on said mounting layer,electrically conductive lead wires electrically connected to said mounting layer and an encapsulation formed from a borosilicate mixture encapsulating said device, mounting layer and a portion of said lead wires, said mounting layer adhering said device to said die and having a temperature coefficient of expansion (TCE) within 1.00±
0.06 those of said die and device, anda cover of the same material as said die extending over said device, mounting layer and a portion of said lead wires, and held to said die by said encapsulation.
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15. A chemical sensor comprising:
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a high temperature structure comprising;
a die, an electrically conductive mounting layer in said die, and a chemical sensitive device comprising SiC, AlN and/or AlxGa1−
xN(x>
0.69) on said mounting layer, said mounting layer adhering said device to said die and having a temperature coefficient of expansion (TCE) within 1.00±
0.06 those of said die and device, andan operating system which relies upon a chemical sensing capability, said high temperature structure connected to provide said capability to said operating system. - View Dependent Claims (16, 17, 18)
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19. A chemical sensor, comprising:
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a high temperature structure comprising;
a AlN die, an electrically conductive mounting layer on said die, said mounting layer comprising W, WC and/or W2C, and a chemical sensitive device comprising SiC, AlN and/or AlxGa1−
xN(x>
0.69) on said mounting layer, said mounting layer adhering said device to said die and having a temperature coefficient of expansion (TCE) within 1.00±
0.06 those of said die and device, andan operating system which relies upon a chemical sensing capability, said high temperature structure connected to provide said capability to said operating system, said mounting layer comprising a W, WC and/or W2C adhesive layer adhered to said die, and a metallization layer adhered to said adhesive layer and bonded to electrodes on said device, said metallization layer having a thermal coefficient of expansion not greater than about 3.5 times that of said adhesive layer over a temperature range of interest.
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20. A temperature dependent device, comprising:
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an operating system which relies upon a substantially linear positive temperature coefficient of resistance (TCR), and a doped SiC resistor connected to said operating system to provide said substantially linear positive TCR.
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21. A The temperature dependent device, comprising:
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an operating system which relies upon a substantially linear positive temperature coefficient of resistance (TCR), and a doped SiC resistor connected to said operating system to provide said substantially linear positive TCR, said temperature dependent device intended for operation within the temperature range of approximately 22°
C.-1,300°
C., wherein said SiC resistor is doped n-type.
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22. A The temperature dependent device, comprising:
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an operating system which relies upon a substantially linear positive temperature coefficient of resistance (TCR), and a doped SiC resistor connected to said operating system to provide said substantially linear positive TCR, said temperature dependent device intended for operation within a temperature range having a lower limit within the range of about 100°
C.-600°
C. and an upper limit of about 1,300°
C., wherein said SiC resistor is doped p-type.
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Specification