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EPROM used as a voltage monitor for semiconductor burn-in

  • US 6,650,105 B2
  • Filed: 06/08/2001
  • Issued: 11/18/2003
  • Est. Priority Date: 08/07/2000
  • Status: Active Grant
First Claim
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1. An EPROM configuration to monitor a semiconductor burn-in bias voltage, comprising:

  • a) a source and substrate of an EPROM connected together and connected to circuit ground, b) a gate and a drain of said EPROM connected together and connected to a burn-in bias voltage, c) said burn-in bias voltage connected to semiconductor product in a burn-in test, d) said burn-in bias voltage induces electrons at a substrate surface of said EPROM that are accelerated and trapped in said gate, which increases a threshold voltage of said gate, e) voltage fluctuations that increases the burn-in bias voltage, induce more electrons into said substrate surface and subsequently further increases said threshold voltage of the gate.

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