Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith

• US 6,650,422 B2
• Filed: 03/26/2001
• Issued: 11/18/2003
• Est. Priority Date: 03/26/2001
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Subramanian, Ramkumar, Singh, Bhanwar, Templeton, Michael K., Rangarajan, Bharath
• Primary Examiner(s): Font, Frank G.
• Assistant Examiner(s): Nguyen, Sang H.
• Application Number:
  US09/817,820
• Publication Number:
  US 20020135781A1
• Time in Patent Office: 967 Days
• Field of Search: 356/600, 356/601, 356/614, 356/615, 356/622, 356/625, 356/627, 356/628, 356/631, 356/637, 356/237--23, 356/364-369
• US Class Current: 356/601
• CPC Class Codes: G01B 11/24 for measuring contours or curvatures
• CPC Class Codes: G01B 11/26 for measuring angles or tapers; for testing the alignment of axes
• CPC Class Codes: G01B 11/30 for measuring roughness or irregularity of surfaces
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: G01N 21/4738 Diffuse reflection precedence is given to G01N21/55 - G01N21/57 if specular component is taken into consideration, e.g. also for testing fluids, fibrous materials
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10

Abstract

The present invention is directed to a method and a system for non-destructively, efficiently and accurately detecting asymmetry in the profile of a feature formed on a wafer during the process of semiconductor fabrication. The method encompasses directing a beam of light or radiation at a feature and detecting a reflected beam associated therewith. Data associated with the reflected beam is correlated with data associated with known feature profiles to ascertain profile characteristics associated with the feature of interest. Using the profile characteristics, an asymmetry of the feature is determined which is then used to generate feedback or feedforward process control data to compensate for or correct such asymmetry in subsequent processing.

Claims

1. A method of detecting asymmetry of a feature profile comprising:

directing a first incident beam of radiation having multiple wavelength components generally at a first side of a feature on a substrate, wherein the first incident beam is at a non-perpendicular angle to the substrate;

detecting a first reflected beam associated with the first side of the feature;

directing a second incident beam of radiation having multiple wavelength components generally at a second side of the feature on the substrate, wherein the second incident beam is at a non-perpendicular angle to the substrate;

detecting a second reflected beam associated with the second side of the feature; and

determining an asymmetry of the feature using the detected first reflected beam and the detected second reflected beam.

2. The method of claim 1, wherein detecting the first reflected beam or the second reflected beam comprises detecting a reflected beam intensity as a function of wavelength.

3. The method of claim 2, wherein detecting the first reflected beam or the second reflected beam further comprises detecting a reflected beam phase as a function of wavelength.

4. The method of claim 2, wherein determining a asymmetry of the feature comprises:

comparing the reflected beam intensity of the first side and the second side to a database containing a plurality of intensity profiles associated with known feature characteristics; and

determining a side profile associated with the first side and the second side of the feature, respectively, based on the comparison.

5. The method of claim 4, wherein determining a side profile associated with the first and second sides of the feature comprises correlating data associated with the first side and the second side of the feature to the plurality of profiles associated with known feature profiles, respectively, using a predetermined correlation threshold.

6. The method of claim 2, wherein the multiple wavelength components are within a range of wavelengths of about 100 nm to about 1000 nm.

7. The method of claim 1, wherein directing the second incident beam of radiation at a second side of a feature comprises positioning a wafer on a stage, wherein the stage rotates about 180 degrees from an original position to direct the second incident beam at the second side of the feature.

8. The method of claim 1, wherein directing the second incident beam of radiation at a second side of a feature comprises positioning a wafer on a stage wherein the second incident beam is rotated about the stage about 180 degrees from an original position of the first incident beam.

9. The method of claim 1, wherein detecting the first reflected beam or the second reflected beam comprises detecting a power spectral density as a function of spatial frequency intensity, wherein the power spectral density is proportional to a scattered intensity and is indicative of an amount of structure in some spatial frequency range.

10. The method of claim 1, wherein determining an asymmetry comprises comparing side profiles associated with the first and second sides of the feature to one another.

11. A method of determining asymmetry associated with a feature and generating process control data associated therewith, comprising the steps of:

directing radiation at the feature;

detecting reflected radiation from the feature;

ascertaining an asymmetry of the feature using the detected reflected radiation; and

generating process control data based on the asymmetry of the feature, wherein directing radiation comprises directing linearly polarized light at a non-perpendicular angle to a substrate having the feature thereon, wherein the linearly polarized light has a range of wavelengths of about 100 nm to about 1000 nm.

12. The method of claim 11, wherein detecting reflected radiation comprises:

detecting a reflected radiation intensity distribution over the range of wavelengths; and

detecting a reflected radiation phase distribution over the range of wavelengths.

13. The method of claim 12, wherein ascertaining the asymmetry of the feature comprises:

correlating the detected reflected radiation intensity distribution and the detected reflected radiation phase distribution to a database containing a plurality of intensity distributions and phase distributions associated with known feature profile characteristics; and

identifying a known feature profile characteristic which most has an intensity distribution and a phase distribution which most closely correlates to the detected reflected radiation intensity distribution and the detected reflected phase distribution of the feature.

14. The method of claim 11, wherein ascertaining the asymmetry of the feature comprises:

determining an edge profile characteristic of a first side of the feature using at least a portion of the detected reflected radiation from the feature;

determining an edge profile characteristic of a second, opposing side of the feature using at least a portion of the detected reflected radiation from the feature; and

determining the asymmetry by analyzing the side profile characteristics associated with the first and second sides of the feature.

15. The method of claim 11, wherein the process control data comprises feedback process control data used to alter a semiconductor process step to reduce feature asymmetry in subsequent fabrication of like features.

16. The method of claim 11, wherein the process control data comprises feedforward process control data to alter a subsequent processing step related to the feature to thereby reduce an effect of the feature asymmetry.

17. The method of claim 11, wherein directing radiation at the feature comprises directing radiation at a substrate on which the feature resides at an angle which is approximately perpendicular thereto.

18. The method of claim 17, wherein detecting reflected radiation comprises detecting a reflected intensity distribution as a function of wavelength.

19. The method of claim 18, wherein ascertaining the asymmetry of the feature comprises:

correlating the reflected intensity to a database containing a plurality of reflected intensity data sets having known feature profile characteristics;

determining a feature profile by selecting a reflected intensity data set which most closely correlates to the detected reflected intensity; and

determining the asymmetry from the known feature profile characteristics of the selected reflected intensity data set.

20. A method of maintaining a relatively spatially uniform dopant concentration is source/drain regions independent of an asymmetry gate electrode profile, comprising the steps of:

directing radiation at a first side of a patterned gate electrode;

detecting reflected radiation from the first side of the patterned gate electrode;

directing radiation at a second, opposing side of the patterned gate electrode;

detecting reflected radiation from the first side of the patterned gate electrode;

determining a profile characteristic associated with the first and second sides of the patterned gate electrode using the detected reflected radiation associated with the first and second sides, respectively;

determining an asymmetry of the patterned gate electrode using the determined profile characteristics of the first and second sides thereof; and

generating ion implantation process control data associated with the asymmetry of the patterned gate electrode.

21. The method of claim 20, further comprising altering a tilt angle associated with an implantation of a source/drain region based on the ion implantation process control data, wherein the source/drain region is self-aligned with respect to the patterned gate electrode.

22. The method of claim 21, wherein the tilt angle is a function of the process control data based on an amount of asymmetry of the patterned gate electrode.

23. The method of claim 21, wherein altering the tilt angle comprises increasing the tilt angle directed at the side of the patterned gate electrode which has a sloped profile characteristic which is greater than a sloped profile characteristic of the opposing side of the patterned gate electrode.

24. A method of determining a feature profile using a database comprising:

directing an incident beam of polarized light at a first side of a feature, wherein the polarized light comprises a range of wavelengths;

detecting a phase of a first reflected beam, wherein the phase is a function of the range of wavelengths;

detecting an intensity of a first reflected beam, wherein the intensity is a function of the range of wavelengths;

directing an incident beam of polarized light at a second side of the feature, wherein the polarized light comprises a range of wavelengths;

detecting a phase of a second reflected beam, wherein the phase is a function of the range of wavelengths;

detecting an intensity of a second reflected beam, wherein the intensity is a function of the range of wavelengths; and

correlating a first set of phase and intensity and a second set of phase and intensity as a function of the range of wavelengths with a database containing a plurality of intensity and phase data of known feature profiles to determine a profile of the feature.

25.The method of claim 24, wherein directing an incident beam of polarized light at a second side of the feature comprises rotating a stage about 180 degrees from an original position such that the incident beam is directed at the second side of the feature.

25. The method of claim 24, wherein directing an incident beam of polarized light at a second side of the feature comprises rotating the incident beam about the feature about 180 degrees from an original position.

26. The method of claim 24, further comprising the step of storing a first set and a second set of data associated with the phase and intensity as a function of wavelength for the first side and the second side, respectively, in a processor system comprising a memory, a database and a processor associated therewith such that the database communicates with the processor.

27. The method of claim 24, wherein the step of correlating comprises comparing a first set of phase and intensity and a second set of phase and intensity as a function of wavelength with the database and determining a profile based on a closest match.

28. A method of in-situ detection and control of asymmetry of a feature profile comprising:

directing an incident beam of radiation at a first side of a feature;

detecting a first reflected beam associated with the first side of the feature;

directing an incident beam of radiation at a second side of the feature;

detecting the second reflected beam associated with the second side of the feature;

determining a pattern profile using the collected data from the first side and the second side of the feature; and

changing one or more process parameters based on the determined pattern profile to reduce asymmetry as between the first side and the second side of the feature.

29. The method of claim 29, wherein directing an incident beam of radiation is performed using an ellipsometer.

35. The method of claim 29, wherein directing an incident beam of radiation at a second side of the feature comprises rotating a stage from an original position such that the incident beam is directed at a second side of the feature.

37. The method of claim 29, wherein directing an incident beam of radiation at a second side of the feature comprises rotating the incident beam about the feature from an original position such that it is directed toward a second side of the feature.

39. The method of claim 29, wherein directing an incident beam of radiation is performed using a scatterometer.

42. The method of claim 29, further comprising the step of storing a first set and a second set of data associated with the phase and intensity as a function of wavelength for the first side and the second side, respectively, in a processor system comprising a memory and a processor associated therewith.

43. The method of claim 29, wherein the processor system further comprises a database.

44. The method of claim 29, wherein the processor system further comprises a trained neural network.

45. The method of claim 29, wherein changing the process parameters comprises altering an etching process.

47. The method of claim 29, wherein changing the process parameters comprises altering one or more factors associated with chemical mechanical polishing pads to increase or decrease an amount of polishing on either the first or second sides or both sides of the feature.

48. The method of claim 29, wherein changing the process parameters comprises altering an alignment of the wafer to compensate for a coma effect of a stepper lens during an etching process.

30. The method of claim 30, wherein data collected from the first and second reflected beams is a reflected beam intensity as a function of wavelength.

31. The method of claim 30, wherein data collected from the first and second reflected beams is a reflected beam phase as a function of wavelength.

32. The method of claim 30, wherein determining a pattern profile using the collected data comprises correlating the data of a first side and a second side of the feature using a predetermined correlation threshold.

33. The method of claim 30, wherein determining a patten profile using the collected data comprises comparing the collected data from the first and the second sides of the feature with a database, wherein the database comprises sets of intensity and phase data corresponding to known feature profiles.

34. The method of claim 30, wherein an incident beam of radiation is an incident beam of polarized light having a predetermined range of wavelengths of about 100 nm to about 1000 nm.

36. The method of claim 36, wherein the stage rotates about 180 degrees such that the incident beam is directed at a side opposite the first side.

38. The method of claim 38, wherein directing an incident beam of radiation at a second side of the feature comprises rotating the incident beam about the feature about 180 degrees from an original position such that it is directed toward a side opposite the first side.

40. The method of claim 40, wherein data detected by the detector is a power spectral density as a function of spatial frequency intensity, wherein the power spectral density is proportional to a scattered intensity and is indicative of an amount of structure in some spatial frequency range.

41. The method of claim 41, wherein determining a patten profile using the detected data comprises comparing the collected data from the first and the second sides of the feature with a database, wherein the database comprises sets of intensity and phase data corresponding to known feature profiles.

46. The method of claim 46, wherein altering the etching process further comprises altering a plasma chemistry in a plasma etching process to increase or decrease a slope of a sidewall of the feature, thereby improving a symmetry of subsequent features.