Method and apparatus for determining column dimensions using scatterometry
First Claim
1. A method for determining column dimensions, comprising:
- providing a wafer having a test structure comprising a plurality of trenches each having a width dimension, and a plurality of columns defined in the trenches, each column having a width dimension less than the width dimension of the trench in which it is defined;
illuminating at least a portion of the columns with a light source;
measuring light reflected from the illuminated portion of the columns to generate a reflection profile; and
determining a dimension of the columns based on the reflection profile.
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Accused Products
Abstract
A test structure includes a plurality of trenches and a plurality of columns defined in the trenches. A method for determining column dimensions includes providing a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches; illuminating at least a portion of the columns with a light source; measuring light reflected from the illuminated portion of the columns to generate a reflection profile; and determining a dimension of the columns based on the reflection profile. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of trenches and a plurality of columns defined in the trenches includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the columns. The detector is adapted to measure light reflected from the illuminated portion of the columns to generate a reflection profile. The data processing unit is adapted to determine a dimension of the columns based on the reflection profile.
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Citations
59 Claims
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1. A method for determining column dimensions, comprising:
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providing a wafer having a test structure comprising a plurality of trenches each having a width dimension, and a plurality of columns defined in the trenches, each column having a width dimension less than the width dimension of the trench in which it is defined;
illuminating at least a portion of the columns with a light source;
measuring light reflected from the illuminated portion of the columns to generate a reflection profile; and
determining a dimension of the columns based on the reflection profile. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
comparing the generated reflection profile to a library of reference reflection profiles, each reference reflection profile having an associated column dimension metric;
selecting a reference reflection profile closest to the generated reflection profile; and
determining the dimension of the columns based on the column dimension metric associated with the selected reference reflection profile.
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3. The method of claim 1, further comprising determining at least one parameter of an operating recipe of a etch tool adapted to etch a subsequent wafer based on the determined column dimension.
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4. The method of claim 3, wherein determining at least one parameter of the operating recipe of the etch tool comprises determining at least one of an etch time parameter, a plasma chemical composition parameter, an RF power parameter, a gas flow parameter, a chamber temperature parameter, a chamber pressure parameter, and an end-point signal parameter.
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5. The method of claim 1, further comprising determining at least one parameter of an operating recipe of a photolithography tool adapted to process a subsequent wafer based on the determined column dimension.
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6. The method of claim 5, wherein determining at least one parameter of the operating recipe of the photolithography tool comprises determining at least one of an exposure time parameter, an exposure dose parameter, a depth of focus parameter, a resist spin speed parameter, a soft bake temperature parameter, a post exposure bake temperature parameter, a cool plate temperature parameter, a developer temperature parameter, and a focus tilt parameter.
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7. The method of claim 1, wherein generating the reflection profile comprises generating the reflection profile based on at least one of intensity and phase of the reflected light.
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8. The method of claim 1, wherein determining the dimension of the columns further comprises:
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comparing the generated reflection profile to a target reflection profile; and
determining the dimension of the columns based on the comparison of the generated reflection profile and the target reflection profile.
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9. The method of claim 1, further comprising identifying a fault condition associated with the columns based on the determined column dimension.
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10. The method of claim 1, wherein determining the dimension of the columns further comprises determining at least one of a diameter dimension, a height dimension, and a sidewall angle dimension.
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11. The method of claim 1, wherein providing the wafer further comprises providing the wafer having the test structure comprising the plurality of trenches and the plurality of columns defined in the trenches, the columns in one trench being aligned with the columns in an adjacent trench.
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12. The method of claim 1, wherein providing the wafer further comprises providing the wafer having the test structure comprising the plurality of trenches and the plurality of columns defined in the trenches, the columns in one trench being offset with respect to the columns in an adjacent trench.
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13. A method for determining columns dimensions, comprising:
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providing a wafer having a test structure comprising a plurality of trenches each having a width dimension, and a plurality of columns defined in the trenches, each column having a width dimension less than the width dimension of the trench in which it is defined;
illuminating at least a portion of the columns with a light source;
measuring light reflected from the illuminated portion of the columns to generate a reflection profile;
comparing the generated reflection profile to a library of reference reflection profiles each reference reflection profile having an associated column dimension metric;
selecting a reference reflection profile closest to the generated reflection profile; and
determining a dimension of the columns based on the column dimension metric associated with the selected reference reflection profile. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method for determining column dimensions, comprising:
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providing a wafer having a test structure comprising a plurality of trenches each having a width dimension, and a plurality of columns defined in the trenches, each column having a width dimension less than the width dimension of the trench in which it is defined;
illuminating at least a portion of the columns with a light source;
measuring light reflected from the illuminated portion of the columns to generate a reflection profile; and
comparing the generated reflection profile to a target reflection profile; and
determining a dimension of the columns based the comparison of the generated reflection profile and the target reflection profile. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of trenches each having a width dimension, and a plurality of columns defined in the trenches, comprising:
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a light source adapted to illuminate at least a portion of the columns, each column having a width dimension less than the width dimension of the trench in which it is defined;
a detector adapted to measure light reflected from the illuminated portion of the columns to generate a reflection profile; and
a data processing unit adapted to determine a dimension of the columns based on the reflection profile. - View Dependent Claims (34, 35, 36, 37, 38, 39)
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40. A processing line, comprising:
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a processing tool adapted to process wafer in accordance with an operating recipe;
a metrology tool adapted to receive a wafer having a test structure comprising a plurality of trenches each having a width dimension, and a plurality of columns defined in the trenches, each column having a width dimension less than the width dimension of the trench in which it is defined, the metrology tool comprising;
a light source adapted to illuminate at least a portion of the columns;
a detector adapted to measure light reflected from the illuminated portion of the columns to generate a reflection profile; and
a data processing unit adapted determine a dimension of the columns based on the reflection profile; and
a controller adapted to determine at least one parameter of the operating recipe of the processing tool based on the determined column dimension. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49)
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50. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of trenches each having a width dimension, and a plurality of columns defined in the trenches, comprising:
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a light source adapted to illuminate at least a portion of the columns, each column having a width dimension less than the width dimension of the trench in which it is defined;
a detector adapted to measure light reflected from the illuminated portion of the columns to generate a reflection profile; and
a data processing unit adapted to compare the generated reflection profile to a library of reference reflection profiles, each reference reflection profile having an associated column dimension metric, select a reference reflection profile closest to the generated reflection profile, and determine a dimension of the columns based on the column dimension metric associated with the selected reference reflection profile.
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51. A metrology tool adapted to receive a wafer having a test structure comprising a plurality of trenches each having a width dimension and a plurality of columns defined in the trenches, comprising:
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a light source adapted to illuminate at least a portion of the columns, each column having a width dimension less than the width dimension of the trench in which it is defined;
a detector adapted to measure light reflected from the illuminated portion of the columns to generate a reflection profile; and
a data processing unit adapted to compare the generated reflection profile to a target reflection profile and determine a dimension of the columns based on the comparison of the generated reflection profile and the target refection profile.
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52. A test structure, comprising:
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a plurality of trenches each having a width dimension; and
a plurality of columns defined in the trenches each having a width dimension less than the width dimension of the trench in which is defined. - View Dependent Claims (53, 54, 55, 56)
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57. A metrology tool, comprising:
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means for receiving a wafer having a test structure comprising a plurality of trenches each having a width dimension, and a plurality of columns defined in the trenches, each column having a width dimension less than the width dimension of the trench in which it is defined;
means for illuminating at least a portion of the columns with a light source;
means for measuring light reflected from the illuminated portion of the columns to generate a reflection profile; and
means for determining a dimension of the columns based on the reflection profile. - View Dependent Claims (58, 59)
means for comparing the generated reflection profile to a library of reference reflection profiles, each reference reflection profile having an associated column dimension metric;
means for selecting a reference reflection profile closest to the generated reflection profile; and
means for determining the dimension of the columns based on the column dimension metric associated with the selected reference reflection profile.
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59. The metrology tool of claim 57, further comprising:
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means for comparing the generated reflection profile to a target reflection profile; and
means for determining the dimension of the columns based on the comparison of the generated reflection profile and the target reflection profile.
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Specification