Endpoint determination for recess etching to a precise depth

• US 6,650,426 B1
• Filed: 07/12/2000
• Issued: 11/18/2003
• Est. Priority Date: 07/12/1999
• Status: Expired due to Fees

• Current Assignee: SCT Technology, Ltd.
• Original Assignee: SCT Technology, Ltd.
• Inventors: Zalicki, Piotr S.
• Primary Examiner(s): Rosenberger, Richard A.
• Application Number:
  US09/614,112
• Time in Patent Office: 1,224 Days
• Field of Search: 356/626, 356/496
• US Class Current: 356/626
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

A method for plasma etching a shallow recess or shallow trench at a predetermined depth by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer begins with a step of detecting an etch start time, either by detecting a time of plasma ignition, as extracted from reflectance data, or a time extracted from the reflectance data when a wafer reflectance signal is observed to begin to change after a residual layer is etched away prior to beginning a recess or trench etch. The next step is measuring a reflectance intensity of light reflected from the wafer. Preferably, a plasma background signal is removed from this measurement and an array detector is used wherein the wavelength is determined using the reflectance model. Next, an etch rate is determined by fitting data representing the collected reflectance signal to the wafer reflectance model as a function of time, and extracting the etch rate from the model. The model preferably takes into account each of a weakening of the reflectance signal as the recess or trench becomes deeper, any residual oxide layer breakthrough step performed prior to etching the recess or trench and preferably as well any etching of the mask or top reference layer. An etch stop time is determined based on the etch rate, the etch start time and the predetermined recess or trench depth. Preferably, a software timer will then trigger the endpoint such that etching is stopped at the determined etch stop time.

Claims

1. A method for plasma etching a shallow recess at a predetermined final depth of less than approximately 0.67 μ

m, or 15-20 or more times shallower than 10 μ

m deep trenches, and a width of less than approximately 0.5 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time based on at least one of a plasma ignition time, a detection of a beginning of a wafer reflectance change, and a time after plasma ignition determined by observing a change of reflectance intensity in the data indicating that a breakthrough step of etching a residual oxide layer has been completed;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said recess;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final recess depth; and

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, said shallow recess being etched at approximately the predetermined final recess depth within a specified tolerance of substantially 6%.

2. The method of claim 1, wherein said calculating steps include fitting said reflectance intensity data as a function of time to said model.

3. The method of claim 2, wherein said calculating steps further include factoring in an etching of a top reference layer during said etch time.

4. The method of claim 1, wherein the etch start time is a time at which the recess depth is between zero and somewhat less than the predetermined recess depth and is known with sufficient certainty such that said etch stop time may be calculated for etching a recess at the predetermined recess depth within a predetermined depth tolerance.

5. The method of claim 4, wherein the etch start time is a time at which the recess depth is approximately zero.

6. The method of claim 5, wherein the etch start time is a time of plasma ignition.

7. The method of claim 5, wherein the etch start time is a time after plasma ignition and is determined by observing an increase of reflectance intensity in the data indicating that a breakthrough step of etching a residual oxide layer has been completed.

8. The method of claim 4, wherein the etch start time is a time at which the recess depth is greater than zero.

9. The method of claim 1, further comprising a step of removing a plasma background signal from the reflectance intensity data.

10. The method of claim 1, wherein the calculating steps are performed for each of said number of times said reflectance intensities are measured.

11. The method of claim 10, wherein the calculating steps are performed for each of said number of times said reflectance intensities are measured.

12. The method of claim 1, further comprising a breakthrough step, wherein a residual layer is first etched prior to etching the recess and prior to the etch start time, and wherein the etch start time is after a plasma ignition time.

13. The method of claim 1, wherein said calculating steps include factoring in a reduction in reflectance intensity based on the depth of the recess.

14. The method of claim 1, wherein said calculating steps further include factoring in an etching of a top reference layer during said etch time.

15. The method of claim 1, wherein an array detector is used for measuring the reflectance intensity, and wherein the wavelength of the light is determined from the reflectance model.

16. The method of claim 1, further comprising a step of reflecting light away using a chamber window that is not exactly parallel to the wafer surface so that light reflected from the window is not collected.

17. A method for plasma etching a shallow recess at a predetermined final depth of less than approximately 0.67 μ

m, or 15-20 or more times shallower than 10 μ

m deep trenches, and a width of less than approximately 0.5 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said recess;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final recess depth; and

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, whereby a shallow recess is etched at approximately the predetermined final recess depth within a specified tolerance,

and the method further comprising a breakthrough step, wherein a residual layer is first etched prior to etching the recess and prior to the etch start time, and wherein the etch start time is after a plasma ignition time.

18. The method of claim 17, wherein said residual layer includes an oxide layer.

19. The method of claim 17, wherein said calculating steps include factoring a reduction in reflectance intensity with increased depth of the recess.

20. The method of claim 19, wherein said calculating steps include fitting said reflectance intensity data as a function of time to a wafer reflectance model.

21. The method of claim 20, wherein said calculating steps further include factoring in an etching of a top reference layer during said recess etching.

22. The method of claim 19, wherein said calculating steps further include factoring in an etching of a top reference layer during said recess etching.

23. The method of claim 17, wherein said calculating steps include fitting said reflectance intensity data as a function of time to a wafer reflectance model.

24. The method of claim 23, wherein said calculating steps further include factoring in an etching of a top reference layer during said recess etching.

25. The method of claim 17, wherein said calculating steps further include factoring an etching of a top reference layer during said etch time.

26. A method for plasma etching a shallow recess at a predetermined final depth of less than approximately 0.67 μ

m, or 15-20 or more times shallower than 10 μ

m deep trenches, and a width of less than approximately 0.5 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said recess;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final recess depth; and

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, whereby a shallow recess is etched at approximately the predetermined final recess depth within a specified tolerance,

wherein said calculating steps include factoring in a reduction in reflectance intensity based on the depth of the recess.

27. The method of claim 26, wherein said reflectance intensity reduction is factored in as a substantially exponential intensity reduction with recess depth.

28. The method of claim 26, wherein said calculating steps further include fitting said data to a wafer reflectance model, such that said etch rate is extracted from the model.

29. The method of claim 28, wherein said calculating steps include fitting said reflectance intensity data as a function of time to said model.

30. The method of claim 29, wherein said calculating steps further include factoring in an etching of a top reference layer during said etch time.

31. The method of claim 26, wherein said calculating steps further include factoring in an etching of a top reference layer during said etch time.

32. A method for plasma etching a shallow recess at a predetermined final depth of less than approximately 0.67 μ

m, or 15-20 or more times shallower than 10 μ

m deep trenches, and a width of less than approximately 0.5 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said recess;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final recess depth; and

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, whereby a shallow recess is etched at approximately the predetermined final recess depth within a specified tolerance,

wherein said calculating steps further include factoring in an etching of a top reference layer during said etch time.

33. The method of claim 32, wherein the predetermined depth tolerance is around 6%.

34. A method for plasma etching a shallow recess at a predetermined final depth of less than approximately 0.67 μ

m, or 15-20 or more times shallower than 10 μ

m deep trenches, and a width of less than approximately 0.5 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said recess;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final recess depth; and

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, whereby a shallow recess is etched at approximately the predetermined final recess depth within a specified tolerance,

wherein an array detector is used for measuring the reflectance intensity, and wherein the wavelength of the light is determined from the reflectance model.

35. A method for plasma etching a shallow recess at a predetermined final depth of less than approximately 0.67 μ

m, or 15-20 or more times shallower than 10 μ

m deep trenches, and a width of less than approximately 0.5 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said recess;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final recess depth;

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, whereby a shallow recess is etched at approximately the predetermined final recess depth within a specified tolerance; and

reflecting light away using a chamber window that is not exactly parallel to the wafer surface so that light reflected from the window is not collected.

36. A method for plasma etching a shallow trench at a predetermined final depth of less than approximately 0.6 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time based on at least one of a plasma ignition time, a detection of a beginning of a wafer reflectance change, and a time after plasma ignition determined by observing a change of reflectance intensity in the data indicating that a breakthrough step of etching a residual oxide layer has been completed;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said trench;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final trench depth; and

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, said shallow trench being etched at approximately the predetermined final trench depth within a specified tolerance of substantially 6%.

37. The method of claim 36, wherein said calculating steps include fitting said reflectance intensity data as a function of time to said model.

38. The method of claim 37, wherein said calculating steps further include factoring in an etching of a top reference layer during said etch time.

39. The method of claim 36, wherein the etch start time is a time at which the trench depth is between zero and somewhat less than the predetermined trench depth and is known with sufficient certainty such that said etch stop time may be calculated for etching a trench at the predetermined trench depth within a predetermined depth tolerance.

40. The method of claim 39, wherein the predetermined depth tolerance is around 6%.

41. The method of claim 39, wherein the etch start time is a time at which the trench depth is approximately zero.

42. The method of claim 41, wherein the etch start time is a time of plasma ignition.

43. The method of claim 41, wherein the etch start time is a time after plasma ignition and is determined by observing an increase of reflectance intensity in the data indicating that a breakthrough step of etching a residual oxide layer has been completed.

44. The method of claim 39, wherein the etch start time is a time at which the trench depth is greater than zero.

45. The method of claim 36, further comprising a step of removing a plasma background signal from the reflectance intensity data.

46. A method for plasma etching a shallow trench at a predetermined final depth of less than approximately 0.6 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said trench;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final trench depth; and

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, whereby a shallow trench is etched at approximately the predetermined final trench depth within a specified tolerance of substantially 6%,

and the method further comprising a breakthrough step, wherein a residual layer is first etched prior to etching the trench and prior to the etch start time, and wherein the etch start time is after a plasma ignition time.

47. The method of claim 46, wherein said residual layer includes an oxide layer.

48. The method of claim 47, wherein said calculating steps include factoring a reduction in reflectance intensity with increased depth of the trench.

49. The method of claim 48, wherein said calculating steps include fitting said reflectance intensity data as a function of time to a wafer reflectance model.

50. The method of claim 49, wherein said calculating steps further include factoring in an etching of a top reference layer during said trench etching.

51. The method of claim 48, wherein said calculating steps further include factoring in an etching of a top reference layer during said trench etching.

52. The method of claim 46, wherein said calculating steps include fitting said reflectance intensity data as a function of time to a wafer reflectance model.

53. The method of claim 52, wherein said calculating steps further include factoring in an etching of a top reference layer during said trench etching.

54. The method of claim 46, wherein said calculating steps further include factoring an etching of a top reference layer during said etch time.

55. A method for plasma etching a shallow trench at a predetermined final depth of less than approximately 0.6 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said trench;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final trench depth; and

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, whereby a shallow trench is etched at approximately the predetermined final trench depth within a specified tolerance of substantially 6%,

wherein said calculating steps include factoring in a reduction in reflectance intensity based on the depth of the trench.

56. The method of claim 55, wherein said reflectance intensity reduction is factored in as a substantially exponential intensity reduction with trench depth.

57. The method of claim 55, wherein said calculating steps further include fitting said data to a wafer reflectance model, such that said etch rate is extracted from the model.

58. The method of claim 57, wherein said calculating steps include fitting said reflectance intensity data as a function of time to said model.

59. The method of claim 58, wherein said calculating steps further include factoring in an etching of a top reference layer during said etch time.

60. The method of claim 55, wherein said calculating steps further include factoring in an etching of a top reference layer during said etch time.

61. A method for plasma etching a shallow trench at a predetermined final depth of less than approximately 0.6 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said trench;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final trench depth; and

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, whereby a shallow trench is etched at approximately the predetermined final trench depth within a specified tolerance of substantially 6%,

wherein said calculating steps further include factoring in an etching of a top reference layer during said etch time.

62. A method for plasma etching a shallow trench at a predetermined final depth of less than approximately 0.6 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said trench;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final trench depth; and

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, whereby a shallow trench is etched at approximately the predetermined final trench depth within a specified tolerance of substantially 6%,

wherein an array detector is used for measuring the reflectance intensity, and wherein the wavelength of the light is determined from the reflectance model.

63. A method for plasma etching a shallow trench at a predetermined final depth of less than approximately 0.6 μ

m by illuminating a wafer with a light source and using a spectrometer to receive the light reflected from the wafer, comprising the steps of;

determining an etch start time;

measuring reflectance intensities of light reflected from the wafer a number of times during said etching of said trench;

calculating an etch rate from data of the measured reflectance intensities;

calculating an etch stop time based on the etch start time, the etch rate, and the predetermined final trench depth;

triggering an endpoint such that etching is stopped approximately at the determined etch stop time, whereby a shallow trench is etched at approximately the predetermined final trench depth within a specified tolerance of substantially 6%; and

reflecting light away using a chamber window that is not exactly parallel to the wafer surface so that light reflected from the window is not collected.