Method and apparatus for forming a capacitive structure including single crystal silicon

• US 6,653,161 B1
• Filed: 05/16/2002
• Issued: 11/25/2003
• Est. Priority Date: 05/16/2002
• Status: Expired due to Fees

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Morse, Michael T.
• Primary Examiner(s): Eckert, George
• Assistant Examiner(s): Richards, N. Drew
• Application Number:
  US10/147,631
• Publication Number:
  US 20030213961A1
• Time in Patent Office: 558 Days
• Field of Search: 438/29, 438/31, 438/32, 438/39, 438/41, 438/388, 438/481, 359/248, 385/2, 385/3
• US Class Current: 438/31
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 29/66181 Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
• CPC Class Codes: H01L 29/92 Capacitors having potential barriers

Abstract

A capacitive structure including single crystal silicon and an insulating layer in a semiconductor substrate. One embodiment of the present invention includes an optical switching device having one or more capacitive structures including single crystal silicon in a substrate such as a silicon-on-insulator (SOI) wafer and can be used in a variety of high bandwidth applications including multi-processor, telecommunications, networking or the like. In one embodiment, a capacitive structure includes single crystal silicon disposed in a first semiconductor material with an insulating layer disposed between the single crystal silicon and the semiconductor material. In one embodiment, a capacitive structure may be formed by laterally growing single crystal silicon through an opening in a trench adjacent to a trench where the capacitive structures is formed.

Claims

1. A method, comprising:

etching one or more trenches in an optical waveguide disposed in a substrate including a first semiconductor material;

growing an insulating layer on an inside surface of the one or more trenches to form a plurality of interfaces between the insulating layer and the first semiconductor material in each of the one or more trenches;

etching an additional one or more longitudinal trenches adjacent to the one or more trenches to remove a first one of the plurality of interfaces to create at least one lateral opening in each of the one or more trenches; and

laterally growing single crystal silicon through the at least one opening to form single crystal silicon in the one or more trenches.

2. The method of claim 1 wherein etching the additional one or more longitudinal trenches adjacent to the one or more trenches includes etching longitudinal trenches on opposing sides of the one or more trenches.

3. The method of claim 2 wherein the longitudinal trenches on opposing sides of the one or more trenches intersect with the one or more trenches.

4. The method of claim 1 wherein the at least one lateral opening comprises a seed window.

5. The method of claim 1 wherein growing the insulating layer comprises growing an oxide layer.

6. The method of claim 5 further comprising regrowing damaged oxide in the insulating layer via thermal oxidation of the substrate.

7. The method of claim 1 wherein laterally growing the single crystal silicon through the at least one lateral opening comprises filling the one or more trenches with the single crystal silicon to form a capacitive structure.

8. The method of claim 1 further comprising etching the substrate to form an optical rib waveguide.

9. The method of claim 1 wherein etching the one or more trenches comprises patterning a photoresist layer to form a mask.

10. The method of claim 1 wherein the substrate includes atop insulating layer above the first semiconductor material, the top insulating layer etched to form a hard mask over the first semiconductor material.

11. The method of claim 1 wherein etching the additional one or more trenches includes etching the additional one or more trenches to a substantially equal depth as the one or more trenches.

12. The method of claim 1 wherein laterally growing single crystal silicon comprises a selective epitaxial growth process including a chlorine-containing gas.

13. The method of claim 12 wherein the gas comprises at least one of hydrogen chloride, silicon tetrachloride, dichlorosilane and trichlorosilane.

14. The method of claim 1 further comprising doping the single crystal silicon while laterally growing the single crystal silicon in the one or more trenches.