Device for emitting electromagnetic radiation at a predetermined wavelength and a method of producing such device

• US 6,653,163 B2
• Filed: 02/20/2001
• Issued: 11/25/2003
• Est. Priority Date: 04/30/1997
• Status: Expired due to Fees

• Current Assignee: IMEC International
• Original Assignee: IMEC International
• Inventors: Borghs, Gustaaf, Van Hoof, Chris, De Neve, Hans
• Primary Examiner(s): Coleman, William David
• Application Number:
  US09/789,954
• Publication Number:
  US 20020000559A1
• Time in Patent Office: 1,008 Days
• Field of Search: 257/94, 438/46, 438/47
• US Class Current: 438/47
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/465 with a resonant cavity structure

Abstract

A device for emitting radiation at a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge carriers of the first and the second region substantially at the antinode of the standing wave pattern of said cavity. The recombination of the charge carriers at the barrier create radiation, the emission wavelength of the radiation being determined by the cavity.

Claims

1. A method of producing a device for emitting electromagnetic radiation, comprising:

depositing a first layer including a first material with a first bandgap and having a refractive index n₁ and with charge carriers of a first conductivity type on a substrate;

depositing a second layer of a second material with a second bandgap on said first layer, said second bandgap being larger than said first bandgap; and

depositing a third layer of substantially the same thickness as said first layer on said second layer, said third layer being provided with charge carriers of a third conductivity type, the total thickness of said first and said third layers having a value of about a predetermined wavelength of radiation emitted by said device divided by n₁;

while maintaining during said depositing at least one surface of said first layer and one surface of said third layer essentially parallel.

2. The method as recited in claim 1, further comprising the step of depositing a mirror layer on said substrate.

3. The method as recited in claim 1, wherein said steps of depositing said layers comprise the steps growing said layers epitaxially on said substrate.

4. The method as recited in claim 3, wherein said substrate is composed of said first material.